Comprehensive uniformity analysis of gaAs-based VCSEL epiwafer by utilizing the on-wafer test capability

Mohd Sharizal Alias, Sahbudin Shaari, Pankaj Kumar Choudhury, Sufian Mitani

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A comprehensive study of the uniformity of 850 nm VCSEL epiwafer grown by the MOCVD technique is presented. By utilizing the VCSEL planar structure, uniformity test is performed on-wafer directly, besides using the conventional photoluminescence technique. The VCSEL quantum wells are found to exhibit a peak emission wavelength of 839.5 nm. Also, the grown epiwafer is observed to exhibit a Fabry-Perot cavity resonance at 846.5 nm. Various VCSEL devices fabricated from the center to the edge of the VCSEL epiwafer show a similar trend towards the light-current and output spectral characteristics. However, the device existing near the epiwafer edge is observed to exhibit significantly different characteristics, which is attributed to the physical conditions of the device near the edge, and also the limitations of the epitaxial growth.

Original languageEnglish
Pages (from-to)368-375
Number of pages8
JournalJournal of Russian Laser Research
Volume30
Issue number4
DOIs
Publication statusPublished - Oct 2009
Externally publishedYes

Fingerprint

Surface emitting lasers
wafers
planar structures
metalorganic chemical vapor deposition
quantum wells
photoluminescence
trends
Metallorganic chemical vapor deposition
cavities
Epitaxial growth
output
Semiconductor quantum wells
Photoluminescence
wavelengths
Wavelength

Keywords

  • III-V compounds
  • Optoelectronic devices
  • Quantum-well devices
  • VCSELS

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Engineering (miscellaneous)

Cite this

Comprehensive uniformity analysis of gaAs-based VCSEL epiwafer by utilizing the on-wafer test capability. / Alias, Mohd Sharizal; Shaari, Sahbudin; Choudhury, Pankaj Kumar; Mitani, Sufian.

In: Journal of Russian Laser Research, Vol. 30, No. 4, 10.2009, p. 368-375.

Research output: Contribution to journalArticle

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