Comparison study of uniformly-doped and delta-doped Al 0.22Ga0.78As/In0.22Ga0.78As pseudomorphic HEMTs

K. N M Kharuddin, Burhanuddin Yeop Majlis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Device performance of uniformly-doped and delta-doped AlGaAs/InGaAs pseudomorphic high electron mobility transistors are investigated with two-dimensional numerical simulator, ATLAS/Silvaco. Simulation results demonstrates superior performance for the delta-doped structure. The advantages shown by delta-doped structure include better electron confinement and reduced parasitic conduction which are manifested as higher transconductance and improved drain current.

Original languageEnglish
Title of host publicationProceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics
Pages419-422
Number of pages4
Publication statusPublished - 2004
Event2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004 - Kuala Lumpur
Duration: 4 Dec 20049 Dec 2004

Other

Other2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004
CityKuala Lumpur
Period4/12/049/12/04

Fingerprint

Drain current
Transconductance
High electron mobility transistors
Simulators
Electrons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Kharuddin, K. N. M., & Yeop Majlis, B. (2004). Comparison study of uniformly-doped and delta-doped Al 0.22Ga0.78As/In0.22Ga0.78As pseudomorphic HEMTs. In Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics (pp. 419-422). [1620917]

Comparison study of uniformly-doped and delta-doped Al 0.22Ga0.78As/In0.22Ga0.78As pseudomorphic HEMTs. / Kharuddin, K. N M; Yeop Majlis, Burhanuddin.

Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics. 2004. p. 419-422 1620917.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kharuddin, KNM & Yeop Majlis, B 2004, Comparison study of uniformly-doped and delta-doped Al 0.22Ga0.78As/In0.22Ga0.78As pseudomorphic HEMTs. in Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics., 1620917, pp. 419-422, 2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004, Kuala Lumpur, 4/12/04.
Kharuddin KNM, Yeop Majlis B. Comparison study of uniformly-doped and delta-doped Al 0.22Ga0.78As/In0.22Ga0.78As pseudomorphic HEMTs. In Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics. 2004. p. 419-422. 1620917
Kharuddin, K. N M ; Yeop Majlis, Burhanuddin. / Comparison study of uniformly-doped and delta-doped Al 0.22Ga0.78As/In0.22Ga0.78As pseudomorphic HEMTs. Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics. 2004. pp. 419-422
@inproceedings{a35ea4c03b9648e1b1109bb99b57e46d,
title = "Comparison study of uniformly-doped and delta-doped Al 0.22Ga0.78As/In0.22Ga0.78As pseudomorphic HEMTs",
abstract = "Device performance of uniformly-doped and delta-doped AlGaAs/InGaAs pseudomorphic high electron mobility transistors are investigated with two-dimensional numerical simulator, ATLAS/Silvaco. Simulation results demonstrates superior performance for the delta-doped structure. The advantages shown by delta-doped structure include better electron confinement and reduced parasitic conduction which are manifested as higher transconductance and improved drain current.",
author = "Kharuddin, {K. N M} and {Yeop Majlis}, Burhanuddin",
year = "2004",
language = "English",
isbn = "0780386582",
pages = "419--422",
booktitle = "Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics",

}

TY - GEN

T1 - Comparison study of uniformly-doped and delta-doped Al 0.22Ga0.78As/In0.22Ga0.78As pseudomorphic HEMTs

AU - Kharuddin, K. N M

AU - Yeop Majlis, Burhanuddin

PY - 2004

Y1 - 2004

N2 - Device performance of uniformly-doped and delta-doped AlGaAs/InGaAs pseudomorphic high electron mobility transistors are investigated with two-dimensional numerical simulator, ATLAS/Silvaco. Simulation results demonstrates superior performance for the delta-doped structure. The advantages shown by delta-doped structure include better electron confinement and reduced parasitic conduction which are manifested as higher transconductance and improved drain current.

AB - Device performance of uniformly-doped and delta-doped AlGaAs/InGaAs pseudomorphic high electron mobility transistors are investigated with two-dimensional numerical simulator, ATLAS/Silvaco. Simulation results demonstrates superior performance for the delta-doped structure. The advantages shown by delta-doped structure include better electron confinement and reduced parasitic conduction which are manifested as higher transconductance and improved drain current.

UR - http://www.scopus.com/inward/record.url?scp=51349112233&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=51349112233&partnerID=8YFLogxK

M3 - Conference contribution

SN - 0780386582

SN - 9780780386587

SP - 419

EP - 422

BT - Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics

ER -