Comparison of structural and optical properties of CdS thin films grown by CSVT, CBD and sputtering techniques

M. A. Islam, M. S. Hossain, M. M. Aliyu, P. Chelvanathan, Q. Huda, M. R. Karim, Kamaruzzaman Sopian, Nowshad Amin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

44 Citations (Scopus)

Abstract

CdS thin films were deposited by three different processes; close spaced vapour transport (CSVT), chemical bath deposition (CBD), and sputtering technique on ITO coated glasses and their structural and optical properties were investigated through XRD, SEM, EDX and UV-Vis spectrometry, respectively. The as-grown films are annealed at 400°C and 500°C for 30 min in air and the change in structural properties with the thermal stress were also investigated. The crystallite grain size, lattice constant, microstrain and dislocation densities of the films are quite different in these processes as observed from XRD analysis. The highest crystallinity is observed for sputtered CdS thin films. However, the crystalline property of CBD and sputtered CdS increases with the thermal annealing, while CSVT-CdS loses its crystalline form. No significant grain changes are observed for thermally annealed CdS thin films but some cracked lines are observed in CBD and CSVT CdS thin films from SEM images. The absorbance in the visible wavelength decreased for annealed CdS thin films, which might be due to fact that films are becoming denser followed by thermal annealing. Significant blue shifts observed for thermally annealed CdS thin films have been found from all processes. The band gap found for as-grown CSVT-CdS is 2.44 eV, for CBD-CdS is 2.38 eV and for sputtered-CdS is 2.42 eV. The disorder of phonon states in the films are he absorption edges due to the exciton phonon interaction or electron-phonon interaction are also observed from the values of steepness parameter.

Original languageEnglish
Title of host publicationEnergy Procedia
PublisherElsevier BV
Pages203-213
Number of pages11
Volume33
DOIs
Publication statusPublished - 2013
Event2012 PV Asia Pacific Conference, PVAP 2012 - Singapore, Singapore
Duration: 23 Oct 201225 Oct 2012

Other

Other2012 PV Asia Pacific Conference, PVAP 2012
CountrySingapore
CitySingapore
Period23/10/1225/10/12

Fingerprint

Sputtering
Structural properties
Optical properties
Vapors
Thin films
Annealing
Crystalline materials
Electron-phonon interactions
Scanning electron microscopy
Thermal stress
Excitons
Spectrometry
Lattice constants
Energy dispersive spectroscopy
Energy gap
Glass
Wavelength
Air
Hot Temperature

Keywords

  • CBD
  • CdS thin films
  • CSVT
  • Sputtering
  • Thermal annealing

ASJC Scopus subject areas

  • Energy(all)

Cite this

Islam, M. A., Hossain, M. S., Aliyu, M. M., Chelvanathan, P., Huda, Q., Karim, M. R., ... Amin, N. (2013). Comparison of structural and optical properties of CdS thin films grown by CSVT, CBD and sputtering techniques. In Energy Procedia (Vol. 33, pp. 203-213). Elsevier BV. https://doi.org/10.1016/j.egypro.2013.05.059

Comparison of structural and optical properties of CdS thin films grown by CSVT, CBD and sputtering techniques. / Islam, M. A.; Hossain, M. S.; Aliyu, M. M.; Chelvanathan, P.; Huda, Q.; Karim, M. R.; Sopian, Kamaruzzaman; Amin, Nowshad.

Energy Procedia. Vol. 33 Elsevier BV, 2013. p. 203-213.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Islam, MA, Hossain, MS, Aliyu, MM, Chelvanathan, P, Huda, Q, Karim, MR, Sopian, K & Amin, N 2013, Comparison of structural and optical properties of CdS thin films grown by CSVT, CBD and sputtering techniques. in Energy Procedia. vol. 33, Elsevier BV, pp. 203-213, 2012 PV Asia Pacific Conference, PVAP 2012, Singapore, Singapore, 23/10/12. https://doi.org/10.1016/j.egypro.2013.05.059
Islam MA, Hossain MS, Aliyu MM, Chelvanathan P, Huda Q, Karim MR et al. Comparison of structural and optical properties of CdS thin films grown by CSVT, CBD and sputtering techniques. In Energy Procedia. Vol. 33. Elsevier BV. 2013. p. 203-213 https://doi.org/10.1016/j.egypro.2013.05.059
Islam, M. A. ; Hossain, M. S. ; Aliyu, M. M. ; Chelvanathan, P. ; Huda, Q. ; Karim, M. R. ; Sopian, Kamaruzzaman ; Amin, Nowshad. / Comparison of structural and optical properties of CdS thin films grown by CSVT, CBD and sputtering techniques. Energy Procedia. Vol. 33 Elsevier BV, 2013. pp. 203-213
@inproceedings{cffaf8c91b0f47618981d9cd0382b712,
title = "Comparison of structural and optical properties of CdS thin films grown by CSVT, CBD and sputtering techniques",
abstract = "CdS thin films were deposited by three different processes; close spaced vapour transport (CSVT), chemical bath deposition (CBD), and sputtering technique on ITO coated glasses and their structural and optical properties were investigated through XRD, SEM, EDX and UV-Vis spectrometry, respectively. The as-grown films are annealed at 400°C and 500°C for 30 min in air and the change in structural properties with the thermal stress were also investigated. The crystallite grain size, lattice constant, microstrain and dislocation densities of the films are quite different in these processes as observed from XRD analysis. The highest crystallinity is observed for sputtered CdS thin films. However, the crystalline property of CBD and sputtered CdS increases with the thermal annealing, while CSVT-CdS loses its crystalline form. No significant grain changes are observed for thermally annealed CdS thin films but some cracked lines are observed in CBD and CSVT CdS thin films from SEM images. The absorbance in the visible wavelength decreased for annealed CdS thin films, which might be due to fact that films are becoming denser followed by thermal annealing. Significant blue shifts observed for thermally annealed CdS thin films have been found from all processes. The band gap found for as-grown CSVT-CdS is 2.44 eV, for CBD-CdS is 2.38 eV and for sputtered-CdS is 2.42 eV. The disorder of phonon states in the films are he absorption edges due to the exciton phonon interaction or electron-phonon interaction are also observed from the values of steepness parameter.",
keywords = "CBD, CdS thin films, CSVT, Sputtering, Thermal annealing",
author = "Islam, {M. A.} and Hossain, {M. S.} and Aliyu, {M. M.} and P. Chelvanathan and Q. Huda and Karim, {M. R.} and Kamaruzzaman Sopian and Nowshad Amin",
year = "2013",
doi = "10.1016/j.egypro.2013.05.059",
language = "English",
volume = "33",
pages = "203--213",
booktitle = "Energy Procedia",
publisher = "Elsevier BV",

}

TY - GEN

T1 - Comparison of structural and optical properties of CdS thin films grown by CSVT, CBD and sputtering techniques

AU - Islam, M. A.

AU - Hossain, M. S.

AU - Aliyu, M. M.

AU - Chelvanathan, P.

AU - Huda, Q.

AU - Karim, M. R.

AU - Sopian, Kamaruzzaman

AU - Amin, Nowshad

PY - 2013

Y1 - 2013

N2 - CdS thin films were deposited by three different processes; close spaced vapour transport (CSVT), chemical bath deposition (CBD), and sputtering technique on ITO coated glasses and their structural and optical properties were investigated through XRD, SEM, EDX and UV-Vis spectrometry, respectively. The as-grown films are annealed at 400°C and 500°C for 30 min in air and the change in structural properties with the thermal stress were also investigated. The crystallite grain size, lattice constant, microstrain and dislocation densities of the films are quite different in these processes as observed from XRD analysis. The highest crystallinity is observed for sputtered CdS thin films. However, the crystalline property of CBD and sputtered CdS increases with the thermal annealing, while CSVT-CdS loses its crystalline form. No significant grain changes are observed for thermally annealed CdS thin films but some cracked lines are observed in CBD and CSVT CdS thin films from SEM images. The absorbance in the visible wavelength decreased for annealed CdS thin films, which might be due to fact that films are becoming denser followed by thermal annealing. Significant blue shifts observed for thermally annealed CdS thin films have been found from all processes. The band gap found for as-grown CSVT-CdS is 2.44 eV, for CBD-CdS is 2.38 eV and for sputtered-CdS is 2.42 eV. The disorder of phonon states in the films are he absorption edges due to the exciton phonon interaction or electron-phonon interaction are also observed from the values of steepness parameter.

AB - CdS thin films were deposited by three different processes; close spaced vapour transport (CSVT), chemical bath deposition (CBD), and sputtering technique on ITO coated glasses and their structural and optical properties were investigated through XRD, SEM, EDX and UV-Vis spectrometry, respectively. The as-grown films are annealed at 400°C and 500°C for 30 min in air and the change in structural properties with the thermal stress were also investigated. The crystallite grain size, lattice constant, microstrain and dislocation densities of the films are quite different in these processes as observed from XRD analysis. The highest crystallinity is observed for sputtered CdS thin films. However, the crystalline property of CBD and sputtered CdS increases with the thermal annealing, while CSVT-CdS loses its crystalline form. No significant grain changes are observed for thermally annealed CdS thin films but some cracked lines are observed in CBD and CSVT CdS thin films from SEM images. The absorbance in the visible wavelength decreased for annealed CdS thin films, which might be due to fact that films are becoming denser followed by thermal annealing. Significant blue shifts observed for thermally annealed CdS thin films have been found from all processes. The band gap found for as-grown CSVT-CdS is 2.44 eV, for CBD-CdS is 2.38 eV and for sputtered-CdS is 2.42 eV. The disorder of phonon states in the films are he absorption edges due to the exciton phonon interaction or electron-phonon interaction are also observed from the values of steepness parameter.

KW - CBD

KW - CdS thin films

KW - CSVT

KW - Sputtering

KW - Thermal annealing

UR - http://www.scopus.com/inward/record.url?scp=84886295591&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84886295591&partnerID=8YFLogxK

U2 - 10.1016/j.egypro.2013.05.059

DO - 10.1016/j.egypro.2013.05.059

M3 - Conference contribution

AN - SCOPUS:84886295591

VL - 33

SP - 203

EP - 213

BT - Energy Procedia

PB - Elsevier BV

ER -