Comparison of mesa and device diameter variation in double wafer-fused multi quantum-well, long-wavelength, vertical cavity surface emitting lasers

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6 Citations (Scopus)

Abstract

Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs) have profound advantages compared to traditional edge-emitting lasers offering improved properties with respect to mode selectivity, fibre coupling, threshold currents and integration into 2D arrays or with other electronic devices. Its commercialization is gaining momentum as the local and access network in optical communication system expand. Numerical modeling of LW-VCSEL utilizing wafer-fused InP-based multi-quantum wells (MQW) and GaAs-based distributed Bragg reflectors (DBRs) is presented in this paper. Emphasis is on the device and mesa/pillar diameter design parameter comparison and its effect on the device characteristics.

Original languageEnglish
Pages (from-to)631-636
Number of pages6
JournalSains Malaysiana
Volume40
Issue number6
Publication statusPublished - Jun 2011

Fingerprint

mesas
surface emitting lasers
quantum wells
wafers
cavities
wavelengths
commercialization
Bragg reflectors
threshold currents
optical communication
telecommunication
selectivity
momentum
fibers
electronics
lasers

Keywords

  • GaAs
  • InP
  • Mesa
  • Multi quantum well
  • Semiconductor laser

ASJC Scopus subject areas

  • General

Cite this

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title = "Comparison of mesa and device diameter variation in double wafer-fused multi quantum-well, long-wavelength, vertical cavity surface emitting lasers",
abstract = "Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs) have profound advantages compared to traditional edge-emitting lasers offering improved properties with respect to mode selectivity, fibre coupling, threshold currents and integration into 2D arrays or with other electronic devices. Its commercialization is gaining momentum as the local and access network in optical communication system expand. Numerical modeling of LW-VCSEL utilizing wafer-fused InP-based multi-quantum wells (MQW) and GaAs-based distributed Bragg reflectors (DBRs) is presented in this paper. Emphasis is on the device and mesa/pillar diameter design parameter comparison and its effect on the device characteristics.",
keywords = "GaAs, InP, Mesa, Multi quantum well, Semiconductor laser",
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T1 - Comparison of mesa and device diameter variation in double wafer-fused multi quantum-well, long-wavelength, vertical cavity surface emitting lasers

AU - N V Visvanathan, P. Susthitha Menon

AU - Kandiah, K.

AU - Yeop Majlis, Burhanuddin

AU - Shaari, S.

PY - 2011/6

Y1 - 2011/6

N2 - Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs) have profound advantages compared to traditional edge-emitting lasers offering improved properties with respect to mode selectivity, fibre coupling, threshold currents and integration into 2D arrays or with other electronic devices. Its commercialization is gaining momentum as the local and access network in optical communication system expand. Numerical modeling of LW-VCSEL utilizing wafer-fused InP-based multi-quantum wells (MQW) and GaAs-based distributed Bragg reflectors (DBRs) is presented in this paper. Emphasis is on the device and mesa/pillar diameter design parameter comparison and its effect on the device characteristics.

AB - Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs) have profound advantages compared to traditional edge-emitting lasers offering improved properties with respect to mode selectivity, fibre coupling, threshold currents and integration into 2D arrays or with other electronic devices. Its commercialization is gaining momentum as the local and access network in optical communication system expand. Numerical modeling of LW-VCSEL utilizing wafer-fused InP-based multi-quantum wells (MQW) and GaAs-based distributed Bragg reflectors (DBRs) is presented in this paper. Emphasis is on the device and mesa/pillar diameter design parameter comparison and its effect on the device characteristics.

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KW - InP

KW - Mesa

KW - Multi quantum well

KW - Semiconductor laser

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