Comparison of mechanical deflection and maximum stress of 3C SiC- and si-based pressure sensor diaphragms for extreme environment

Noraini Marsi, Burhanuddin Yeop Majlis, Azrul Azlan Hamzah, Faisal Mohd-Yasin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

18 Citations (Scopus)

Abstract

The design of a capacitive-sensing pressure sensor for extreme environment is proposed in this project. The movable diaphragm (top plate) is made of either cubic silicon carbide (3C-SiC) or Silicon (Si), while the fix diaphragm (bottom plate) is made of Si. This paper specifically compares the mechanical performance of the movable diaphragm utilizing both materials. Two important parameters associated with the behavior of the diaphragm are examined, namely the maximum deflection and maximum stress, and they are simulated at a pressure of 0-100 MPa, and at temperature of 27-1000 ̊C. The graphs of maximum deflection and stress vs pressures at different temperatures and thicknesses are plotted to summarize the data. SiC diaphragm has lower deflection and stress compares to Si diaphragm at different thicknesses, pressures and temperatures. Then, a linear regression analysis is performed to determine the R-square value. It is shown from these analyses that SiC diaphragm exhibits better linear behavior compares to Si diaphragm. Generally, this work proves that SiC is a better material over Si for the development of a pressure sensor at extreme environment.

Original languageEnglish
Title of host publication2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings
Pages186-190
Number of pages5
DOIs
Publication statusPublished - 2012
Event2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Kuala Lumpur
Duration: 19 Sep 201221 Sep 2012

Other

Other2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012
CityKuala Lumpur
Period19/9/1221/9/12

Fingerprint

Pressure sensors
Diaphragms
Silicon
Linear regression
Silicon carbide
Regression analysis
Temperature

Keywords

  • diaphragm
  • harsh environment
  • pressure sensor
  • silicon carbide (SiC)

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Marsi, N., Yeop Majlis, B., Hamzah, A. A., & Mohd-Yasin, F. (2012). Comparison of mechanical deflection and maximum stress of 3C SiC- and si-based pressure sensor diaphragms for extreme environment. In 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings (pp. 186-190). [6417120] https://doi.org/10.1109/SMElec.2012.6417120

Comparison of mechanical deflection and maximum stress of 3C SiC- and si-based pressure sensor diaphragms for extreme environment. / Marsi, Noraini; Yeop Majlis, Burhanuddin; Hamzah, Azrul Azlan; Mohd-Yasin, Faisal.

2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings. 2012. p. 186-190 6417120.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Marsi, N, Yeop Majlis, B, Hamzah, AA & Mohd-Yasin, F 2012, Comparison of mechanical deflection and maximum stress of 3C SiC- and si-based pressure sensor diaphragms for extreme environment. in 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings., 6417120, pp. 186-190, 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012, Kuala Lumpur, 19/9/12. https://doi.org/10.1109/SMElec.2012.6417120
Marsi N, Yeop Majlis B, Hamzah AA, Mohd-Yasin F. Comparison of mechanical deflection and maximum stress of 3C SiC- and si-based pressure sensor diaphragms for extreme environment. In 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings. 2012. p. 186-190. 6417120 https://doi.org/10.1109/SMElec.2012.6417120
Marsi, Noraini ; Yeop Majlis, Burhanuddin ; Hamzah, Azrul Azlan ; Mohd-Yasin, Faisal. / Comparison of mechanical deflection and maximum stress of 3C SiC- and si-based pressure sensor diaphragms for extreme environment. 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings. 2012. pp. 186-190
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