Comparison of latch-based charge pumps using low voltage strategies in energy harvesting applications

Michelle S M Lim, Md. Shabiul Islam, Jahariah Sampe, Kim Heng Yeo, Sawal Hamid Md Ali, Michelle S M Lim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper provides a comparison of low voltage design strategies in charge pumps that may be used with micro-power energy harvesters. The focus is on low input voltage (< 500 mV) for possible cold start in monolithic integration. An overview of published low voltage techniques in charge pump designs are presented in four perspectives: body effect, gate voltages, MOS threshold voltage and power losses. Based on these four perspectives, latch-based charge pumps are constructed to compare the effects of several low voltage strategies on the charge pumps' performances. These charge pumps are simulated in two-stages using the common TSMC180nm CMOS technology. This results in the enhanced gate voltage (also lower conduction losses) and threshold lowering schemes having the fastest ramp-up of 10-20ms while zero-body effect scheme providing best voltage pumping efficiency > 90% for 100-500mV input voltage ranges. The results will help designers to achieve optimum low voltage operation in specific charge pump performance metrics.

Original languageEnglish
Title of host publication2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages74-78
Number of pages5
Volume2016-September
ISBN (Electronic)9781509023837
DOIs
Publication statusPublished - 21 Sep 2016
Event12th IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Bangsar, Kuala Lumpur, Malaysia
Duration: 17 Aug 201619 Aug 2016

Other

Other12th IEEE International Conference on Semiconductor Electronics, ICSE 2016
CountryMalaysia
CityBangsar, Kuala Lumpur
Period17/8/1619/8/16

Fingerprint

Energy harvesting
Pumps
Electric potential
Harvesters

Keywords

  • Charge Pump
  • Design Strategies
  • Energy Harvesters
  • Low Voltage

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Lim, M. S. M., Islam, M. S., Sampe, J., Yeo, K. H., Md Ali, S. H., & Lim, M. S. M. (2016). Comparison of latch-based charge pumps using low voltage strategies in energy harvesting applications. In 2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings (Vol. 2016-September, pp. 74-78). [7573594] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMELEC.2016.7573594

Comparison of latch-based charge pumps using low voltage strategies in energy harvesting applications. / Lim, Michelle S M; Islam, Md. Shabiul; Sampe, Jahariah; Yeo, Kim Heng; Md Ali, Sawal Hamid; Lim, Michelle S M.

2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings. Vol. 2016-September Institute of Electrical and Electronics Engineers Inc., 2016. p. 74-78 7573594.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lim, MSM, Islam, MS, Sampe, J, Yeo, KH, Md Ali, SH & Lim, MSM 2016, Comparison of latch-based charge pumps using low voltage strategies in energy harvesting applications. in 2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings. vol. 2016-September, 7573594, Institute of Electrical and Electronics Engineers Inc., pp. 74-78, 12th IEEE International Conference on Semiconductor Electronics, ICSE 2016, Bangsar, Kuala Lumpur, Malaysia, 17/8/16. https://doi.org/10.1109/SMELEC.2016.7573594
Lim MSM, Islam MS, Sampe J, Yeo KH, Md Ali SH, Lim MSM. Comparison of latch-based charge pumps using low voltage strategies in energy harvesting applications. In 2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings. Vol. 2016-September. Institute of Electrical and Electronics Engineers Inc. 2016. p. 74-78. 7573594 https://doi.org/10.1109/SMELEC.2016.7573594
Lim, Michelle S M ; Islam, Md. Shabiul ; Sampe, Jahariah ; Yeo, Kim Heng ; Md Ali, Sawal Hamid ; Lim, Michelle S M. / Comparison of latch-based charge pumps using low voltage strategies in energy harvesting applications. 2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings. Vol. 2016-September Institute of Electrical and Electronics Engineers Inc., 2016. pp. 74-78
@inproceedings{9f3042cc339d474e8caebd0a6ff8b432,
title = "Comparison of latch-based charge pumps using low voltage strategies in energy harvesting applications",
abstract = "This paper provides a comparison of low voltage design strategies in charge pumps that may be used with micro-power energy harvesters. The focus is on low input voltage (< 500 mV) for possible cold start in monolithic integration. An overview of published low voltage techniques in charge pump designs are presented in four perspectives: body effect, gate voltages, MOS threshold voltage and power losses. Based on these four perspectives, latch-based charge pumps are constructed to compare the effects of several low voltage strategies on the charge pumps' performances. These charge pumps are simulated in two-stages using the common TSMC180nm CMOS technology. This results in the enhanced gate voltage (also lower conduction losses) and threshold lowering schemes having the fastest ramp-up of 10-20ms while zero-body effect scheme providing best voltage pumping efficiency > 90{\%} for 100-500mV input voltage ranges. The results will help designers to achieve optimum low voltage operation in specific charge pump performance metrics.",
keywords = "Charge Pump, Design Strategies, Energy Harvesters, Low Voltage",
author = "Lim, {Michelle S M} and Islam, {Md. Shabiul} and Jahariah Sampe and Yeo, {Kim Heng} and {Md Ali}, {Sawal Hamid} and Lim, {Michelle S M}",
year = "2016",
month = "9",
day = "21",
doi = "10.1109/SMELEC.2016.7573594",
language = "English",
volume = "2016-September",
pages = "74--78",
booktitle = "2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Comparison of latch-based charge pumps using low voltage strategies in energy harvesting applications

AU - Lim, Michelle S M

AU - Islam, Md. Shabiul

AU - Sampe, Jahariah

AU - Yeo, Kim Heng

AU - Md Ali, Sawal Hamid

AU - Lim, Michelle S M

PY - 2016/9/21

Y1 - 2016/9/21

N2 - This paper provides a comparison of low voltage design strategies in charge pumps that may be used with micro-power energy harvesters. The focus is on low input voltage (< 500 mV) for possible cold start in monolithic integration. An overview of published low voltage techniques in charge pump designs are presented in four perspectives: body effect, gate voltages, MOS threshold voltage and power losses. Based on these four perspectives, latch-based charge pumps are constructed to compare the effects of several low voltage strategies on the charge pumps' performances. These charge pumps are simulated in two-stages using the common TSMC180nm CMOS technology. This results in the enhanced gate voltage (also lower conduction losses) and threshold lowering schemes having the fastest ramp-up of 10-20ms while zero-body effect scheme providing best voltage pumping efficiency > 90% for 100-500mV input voltage ranges. The results will help designers to achieve optimum low voltage operation in specific charge pump performance metrics.

AB - This paper provides a comparison of low voltage design strategies in charge pumps that may be used with micro-power energy harvesters. The focus is on low input voltage (< 500 mV) for possible cold start in monolithic integration. An overview of published low voltage techniques in charge pump designs are presented in four perspectives: body effect, gate voltages, MOS threshold voltage and power losses. Based on these four perspectives, latch-based charge pumps are constructed to compare the effects of several low voltage strategies on the charge pumps' performances. These charge pumps are simulated in two-stages using the common TSMC180nm CMOS technology. This results in the enhanced gate voltage (also lower conduction losses) and threshold lowering schemes having the fastest ramp-up of 10-20ms while zero-body effect scheme providing best voltage pumping efficiency > 90% for 100-500mV input voltage ranges. The results will help designers to achieve optimum low voltage operation in specific charge pump performance metrics.

KW - Charge Pump

KW - Design Strategies

KW - Energy Harvesters

KW - Low Voltage

UR - http://www.scopus.com/inward/record.url?scp=84990873303&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84990873303&partnerID=8YFLogxK

U2 - 10.1109/SMELEC.2016.7573594

DO - 10.1109/SMELEC.2016.7573594

M3 - Conference contribution

VL - 2016-September

SP - 74

EP - 78

BT - 2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

ER -