Co-implantation of carbon and protons: An integrated silicon device technology compatible method to generate the lasing G-center

Dilla Duryha Berhanuddin, Manon A. Lourenço, Russell M. Gwilliam, Kevin P. Homewood

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The optically active carbon related G-center is attracting great interest because of evidence that it can provide lasing in silicon. Here a technique to form the G-center in silicon is reported. The carbon G-center is generated by implantation of carbon followed by proton irradiation. Photoluminescence measurements confirm the controlled formation of high levels of the G-center that, importantly, completely dominates the emission spectrum. Unlike previous methods of introducing the G-center the current approach significantly is truly fully compatible with standard silicon ULSI (ultralarge scale integration) technology.

Original languageEnglish
Pages (from-to)2709-2712
Number of pages4
JournalAdvanced Functional Materials
Volume22
Issue number13
DOIs
Publication statusPublished - 10 Jul 2012

Fingerprint

Silicon
Ion implantation
lasing
Protons
implantation
Carbon
protons
carbon
silicon
Proton irradiation
Photoluminescence
proton irradiation
emission spectra
photoluminescence

Keywords

  • optically active materials
  • photoluminescence
  • photonics
  • semiconductors

ASJC Scopus subject areas

  • Biomaterials
  • Electrochemistry
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Co-implantation of carbon and protons : An integrated silicon device technology compatible method to generate the lasing G-center. / Berhanuddin, Dilla Duryha; Lourenço, Manon A.; Gwilliam, Russell M.; Homewood, Kevin P.

In: Advanced Functional Materials, Vol. 22, No. 13, 10.07.2012, p. 2709-2712.

Research output: Contribution to journalArticle

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