Circuit of an EEPROM sense amplifier in 0.18 μm CMOS technology

Labonnah F. Rahman, Md Syedul Amin, Md. Mamun Ibne Reaz, M. A M Ali

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A sense amplifier for EEPROM memory competent of functioning under a very low-voltage power supply is presented. The sense amplifier was designed for an EEPROM realized with a 0.18-μm CMOS technology. Key design techniques of power dissipation optimization for EEPROM memory are described. The topology of the sense amplifier uses a pure voltage-mode comparison allowing power supply at 1 V to be used. Simulation results showed that the circuit is able to work under a low power and also the size of the circuit is reduced due to the 0.18-μm CMOS process.

Original languageEnglish
Title of host publicationIEEE Region 10 Annual International Conference, Proceedings/TENCON
Pages642-645
Number of pages4
DOIs
Publication statusPublished - 2011
Event2011 IEEE Region 10 Conference: Trends and Development in Converging Technology Towards 2020, TENCON 2011 - Bali
Duration: 21 Nov 201124 Nov 2011

Other

Other2011 IEEE Region 10 Conference: Trends and Development in Converging Technology Towards 2020, TENCON 2011
CityBali
Period21/11/1124/11/11

Fingerprint

Data storage equipment
Networks (circuits)
Electric potential
Energy dissipation
Topology

Keywords

  • EEPROM
  • Low power
  • Sense amplifier
  • Voltage sensing

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications

Cite this

Rahman, L. F., Syedul Amin, M., Ibne Reaz, M. M., & Ali, M. A. M. (2011). Circuit of an EEPROM sense amplifier in 0.18 μm CMOS technology. In IEEE Region 10 Annual International Conference, Proceedings/TENCON (pp. 642-645). [6129186] https://doi.org/10.1109/TENCON.2011.6129186

Circuit of an EEPROM sense amplifier in 0.18 μm CMOS technology. / Rahman, Labonnah F.; Syedul Amin, Md; Ibne Reaz, Md. Mamun; Ali, M. A M.

IEEE Region 10 Annual International Conference, Proceedings/TENCON. 2011. p. 642-645 6129186.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Rahman, LF, Syedul Amin, M, Ibne Reaz, MM & Ali, MAM 2011, Circuit of an EEPROM sense amplifier in 0.18 μm CMOS technology. in IEEE Region 10 Annual International Conference, Proceedings/TENCON., 6129186, pp. 642-645, 2011 IEEE Region 10 Conference: Trends and Development in Converging Technology Towards 2020, TENCON 2011, Bali, 21/11/11. https://doi.org/10.1109/TENCON.2011.6129186
Rahman LF, Syedul Amin M, Ibne Reaz MM, Ali MAM. Circuit of an EEPROM sense amplifier in 0.18 μm CMOS technology. In IEEE Region 10 Annual International Conference, Proceedings/TENCON. 2011. p. 642-645. 6129186 https://doi.org/10.1109/TENCON.2011.6129186
Rahman, Labonnah F. ; Syedul Amin, Md ; Ibne Reaz, Md. Mamun ; Ali, M. A M. / Circuit of an EEPROM sense amplifier in 0.18 μm CMOS technology. IEEE Region 10 Annual International Conference, Proceedings/TENCON. 2011. pp. 642-645
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