Characterization of wet etching process for in0.53Ga 0.47as epitaxy layer using surface profiling technique

Mohd Hairul Faizal Ahmad, Abang Annuar Ehsan, Lee Hock Guan, Sahbudin Shaari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Characterization of the wet etching process for an InGaAs epitaxy layer using surface profiling technique is reported. Surface profiling technique allows a 2D reconstruction view of the etched regions showing both the vertical and horizontal dimensions accurately. The etchant used is a mixture of phosphoric acid (H3PO4), hydrogen peroxide (H 2O2) and deionised water (H2O) in a ratio of 1-1-8. Several etch times are selected which ranges from 1.5, 2, 4, 7 and 10 minutes. The etching depths are measured using Tencor P-12 surface profiler tool. The results showed that the etched depth of InGaAs is proportional to the etching time.

Original languageEnglish
Title of host publicationProceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics
Pages486-489
Number of pages4
Publication statusPublished - 2004
Event2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004 - Kuala Lumpur
Duration: 4 Dec 20049 Dec 2004

Other

Other2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004
CityKuala Lumpur
Period4/12/049/12/04

Fingerprint

Wet etching
Epitaxial growth
Etching
Deionized water
Phosphoric acid
Hydrogen peroxide
Hydrogen

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Ahmad, M. H. F., Ehsan, A. A., Guan, L. H., & Shaari, S. (2004). Characterization of wet etching process for in0.53Ga 0.47as epitaxy layer using surface profiling technique. In Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics (pp. 486-489). [1620932]

Characterization of wet etching process for in0.53Ga 0.47as epitaxy layer using surface profiling technique. / Ahmad, Mohd Hairul Faizal; Ehsan, Abang Annuar; Guan, Lee Hock; Shaari, Sahbudin.

Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics. 2004. p. 486-489 1620932.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ahmad, MHF, Ehsan, AA, Guan, LH & Shaari, S 2004, Characterization of wet etching process for in0.53Ga 0.47as epitaxy layer using surface profiling technique. in Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics., 1620932, pp. 486-489, 2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004, Kuala Lumpur, 4/12/04.
Ahmad MHF, Ehsan AA, Guan LH, Shaari S. Characterization of wet etching process for in0.53Ga 0.47as epitaxy layer using surface profiling technique. In Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics. 2004. p. 486-489. 1620932
Ahmad, Mohd Hairul Faizal ; Ehsan, Abang Annuar ; Guan, Lee Hock ; Shaari, Sahbudin. / Characterization of wet etching process for in0.53Ga 0.47as epitaxy layer using surface profiling technique. Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics. 2004. pp. 486-489
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