Characterization of thin oxide removal by rapid thermal annealing treatment

Uda Hashim, Sahbudin Shaari, Burhanuddin Yeop Majlis

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

Rapid thermal annealing treatment technique was introduced to remove a thin native oxide on silicon substrate. The native oxide was not present at the silicide/silicon interface after the wafer has been thermal treated by RTA at 800 °C for 60 second in N2.ambient. This SEM cross-sectional micrograph observation was supported by X-Ray Diffraction analysis. XRD has not traceable any present of oxide peak. Therefore, RTA heat treatment can be an alternative method to remove the native oxide.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages213-216
Number of pages4
Publication statusPublished - 1998
EventProceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98) - Bangi, Malaysia
Duration: 24 Nov 199826 Nov 1998

Other

OtherProceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98)
CityBangi, Malaysia
Period24/11/9826/11/98

Fingerprint

Rapid thermal annealing
Oxides
Silicon
X ray diffraction analysis
Heat treatment
Scanning electron microscopy
Substrates

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Hashim, U., Shaari, S., & Yeop Majlis, B. (1998). Characterization of thin oxide removal by rapid thermal annealing treatment. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 213-216). Piscataway, NJ, United States: IEEE.

Characterization of thin oxide removal by rapid thermal annealing treatment. / Hashim, Uda; Shaari, Sahbudin; Yeop Majlis, Burhanuddin.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Piscataway, NJ, United States : IEEE, 1998. p. 213-216.

Research output: Chapter in Book/Report/Conference proceedingChapter

Hashim, U, Shaari, S & Yeop Majlis, B 1998, Characterization of thin oxide removal by rapid thermal annealing treatment. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. IEEE, Piscataway, NJ, United States, pp. 213-216, Proceedings of the 1998 IEEE International Conference on Semicondutor Electronics (ICSE'98), Bangi, Malaysia, 24/11/98.
Hashim U, Shaari S, Yeop Majlis B. Characterization of thin oxide removal by rapid thermal annealing treatment. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Piscataway, NJ, United States: IEEE. 1998. p. 213-216
Hashim, Uda ; Shaari, Sahbudin ; Yeop Majlis, Burhanuddin. / Characterization of thin oxide removal by rapid thermal annealing treatment. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Piscataway, NJ, United States : IEEE, 1998. pp. 213-216
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