Characterization of thin GaAs films grown on nanostructured silicon substrates

Salvador Guel Sandoval, M. Khizar, J. Anderson, R. P. Manginell, G. M. Peake, Nowshad Amin, Kamaruzzaman Sopian, T. Rotter, G. Balakrishnan, S. R J Brueck, Saleem H. Zaidi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Compound semiconductor multi-junction solar cells are limited to small sizes (4-inch diameters) and are expensive due to starting wafer costs such as Ge and GaAs. High-quality GaAs films grown on Si substrates addresses many of these challenges. GaAs growth on high aspect ratio Si nanostructures has been investigated. High aspect ratio nanostructures can serve as templates for defect reduction as well as sacrificial layers. Thin (∼ 5 μm) films of GaAs have been grown on a wide range of Si nanostructures using MBE and MOCVD methods. Both methods demonstrate effectiveness of defect density reduction with nanostructured surfaces. With MBE method, a high density of whisker growth is observed. With MOCVD growth, whisker-free relatively smooth surfaces have been produced. PL signal is also stronger with lower full width at half maximum from the MOCVD grown films. Spectral transmission measurements exhibit GaAs band edge consistent with crystalline GaAs substrates. A systematic effort aimed at growth optimization on nanostructured Si surfaces is expected to lead to defect density reduction in 103/cm2 range.

Original languageEnglish
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages2135-2138
Number of pages4
DOIs
Publication statusPublished - 2010
Event35th IEEE Photovoltaic Specialists Conference, PVSC 2010 - Honolulu, HI
Duration: 20 Jun 201025 Jun 2010

Other

Other35th IEEE Photovoltaic Specialists Conference, PVSC 2010
CityHonolulu, HI
Period20/6/1025/6/10

Fingerprint

Metallorganic chemical vapor deposition
Thin films
Nanostructures
Silicon
Defect density
Substrates
Molecular beam epitaxy
Aspect ratio
Full width at half maximum
Semiconductor materials
Crystalline materials
Defects
Costs

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering

Cite this

Sandoval, S. G., Khizar, M., Anderson, J., Manginell, R. P., Peake, G. M., Amin, N., ... Zaidi, S. H. (2010). Characterization of thin GaAs films grown on nanostructured silicon substrates. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 2135-2138). [5615950] https://doi.org/10.1109/PVSC.2010.5615950

Characterization of thin GaAs films grown on nanostructured silicon substrates. / Sandoval, Salvador Guel; Khizar, M.; Anderson, J.; Manginell, R. P.; Peake, G. M.; Amin, Nowshad; Sopian, Kamaruzzaman; Rotter, T.; Balakrishnan, G.; Brueck, S. R J; Zaidi, Saleem H.

Conference Record of the IEEE Photovoltaic Specialists Conference. 2010. p. 2135-2138 5615950.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sandoval, SG, Khizar, M, Anderson, J, Manginell, RP, Peake, GM, Amin, N, Sopian, K, Rotter, T, Balakrishnan, G, Brueck, SRJ & Zaidi, SH 2010, Characterization of thin GaAs films grown on nanostructured silicon substrates. in Conference Record of the IEEE Photovoltaic Specialists Conference., 5615950, pp. 2135-2138, 35th IEEE Photovoltaic Specialists Conference, PVSC 2010, Honolulu, HI, 20/6/10. https://doi.org/10.1109/PVSC.2010.5615950
Sandoval SG, Khizar M, Anderson J, Manginell RP, Peake GM, Amin N et al. Characterization of thin GaAs films grown on nanostructured silicon substrates. In Conference Record of the IEEE Photovoltaic Specialists Conference. 2010. p. 2135-2138. 5615950 https://doi.org/10.1109/PVSC.2010.5615950
Sandoval, Salvador Guel ; Khizar, M. ; Anderson, J. ; Manginell, R. P. ; Peake, G. M. ; Amin, Nowshad ; Sopian, Kamaruzzaman ; Rotter, T. ; Balakrishnan, G. ; Brueck, S. R J ; Zaidi, Saleem H. / Characterization of thin GaAs films grown on nanostructured silicon substrates. Conference Record of the IEEE Photovoltaic Specialists Conference. 2010. pp. 2135-2138
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