Characterization of protex® PSB thin film as a photosensitive layer for mems capacitive pressure sensor diaphragm based on SIC-ON-SI wafer

Noraini Marsi, Burhanuddin Yeop Majlis, Azrul Azlan Hamzah, Faisal Mohd-Yasin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The ProTEX® PSB thin film as a photosensitive layer has been released in the market as an alternative replacement for silicon nitride or silicon oxide wet etch masks. In this work, this film has been deposited on SiC-on-Si wafer for the back-etching of the bulk Si to leave SiC thin film to be used as a pressure sensor diaphragm. This paper will discuss the process flow to estimate the optimized ProTEX® PSB thin film thickness for the sufficient back-etching of the 300um bulk Si. This thickness is defined by the following parameters: spin-coating rotational speed, final cure temperature and hard bake time of coating. Several samples of ProTEX® PSB thin films have been preliminary characterized by infinite focus microscopy (IFM) and scanning electron microscopy (SEM) to examine the substrate surface conditions and the effects of undercut edges structure. Based on these data, it was determined that the optimum thickness of ProTEX® PSB for this project is 2.133 μm with the spin speed of 3000 rpm, the first bake temperature of 110 °C in 120 seconds and the second bake temperature of 240 °C in 60 seconds. We conclude that ProTEX® PSB can withstand the etch mask with etch rate of 1.28 μm/min for 8 hours and gives good quality effect of undercut edge on the SiC-on-Si wafer.

Original languageEnglish
Title of host publicationKey Engineering Materials
Pages1083-1086
Number of pages4
Volume594-595
DOIs
Publication statusPublished - 2014
Event2013 International Conference on Advanced Materials Engineering and Technology, ICAMET 2013 - Bandung
Duration: 28 Nov 201329 Nov 2013

Publication series

NameKey Engineering Materials
Volume594-595
ISSN (Print)10139826

Other

Other2013 International Conference on Advanced Materials Engineering and Technology, ICAMET 2013
CityBandung
Period28/11/1329/11/13

Fingerprint

Capacitive sensors
Pressure sensors
Diaphragms
Thin films
Masks
Etching
Silicon oxides
Spin coating
Silicon nitride
Temperature
Film thickness
Microscopic examination
Coatings
Scanning electron microscopy
Substrates

Keywords

  • Bulk micromachining
  • MEMS capacitive pressure sensor
  • Photosensitive
  • ProTEX® PSB
  • Silicon carbide (SiC)

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Characterization of protex® PSB thin film as a photosensitive layer for mems capacitive pressure sensor diaphragm based on SIC-ON-SI wafer. / Marsi, Noraini; Yeop Majlis, Burhanuddin; Hamzah, Azrul Azlan; Mohd-Yasin, Faisal.

Key Engineering Materials. Vol. 594-595 2014. p. 1083-1086 (Key Engineering Materials; Vol. 594-595).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Marsi, N, Yeop Majlis, B, Hamzah, AA & Mohd-Yasin, F 2014, Characterization of protex® PSB thin film as a photosensitive layer for mems capacitive pressure sensor diaphragm based on SIC-ON-SI wafer. in Key Engineering Materials. vol. 594-595, Key Engineering Materials, vol. 594-595, pp. 1083-1086, 2013 International Conference on Advanced Materials Engineering and Technology, ICAMET 2013, Bandung, 28/11/13. https://doi.org/10.4028/www.scientific.net/KEM.594-595.1083
Marsi, Noraini ; Yeop Majlis, Burhanuddin ; Hamzah, Azrul Azlan ; Mohd-Yasin, Faisal. / Characterization of protex® PSB thin film as a photosensitive layer for mems capacitive pressure sensor diaphragm based on SIC-ON-SI wafer. Key Engineering Materials. Vol. 594-595 2014. pp. 1083-1086 (Key Engineering Materials).
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