Characterization of perovskite layer on various nanostructured silicon wafer

Nur Fairuz Mohd Rostan, Suhaila Sepeai, Noor Fadhilah Ramli, Ayu Wazira Azhari, Norasikin Ahmad Ludin, Mohd Asri Mat Teridi, Mohd. Adib Ibrahim, Saleem H. Zaidi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Crystalline silicon (c-Si) solar cell dominates 90% of photovoltaic (PV) market. The c-Si is the most mature of all PV technologies and expected to remain leading the PV technology by 2050. The attractive characters of Si solar cell are stability, long lasting and higher lifetime. Presently, the efficiency of c-Si solar cell is still stuck at 25% for one and half decades. Tandem approach is one of the attempts to improve the Si solar cell efficiency with higher bandgap layer is stacked on top of Si bottom cell. Perovskite offers a big potential to be inserted into a tandem solar cell. Perovskite with bandgap of 1.6 to 1.9 eV will be able to absorb high energy photons, meanwhile c-Si with bandgap of 1.124 eV will absorb low energy photons. The high carrier mobility, high carrier lifetime, highly compatible with both solution and evaporation techniques makes perovskite an eligible candidate for perovskite-Si tandem configuration. The solution of methyl ammonium lead iodide (MAPbI3) was prepared by single step precursor process. The perovskite layer was deposited on different c-Si surface structure, namely planar, textured and Si nanowires (SiNWs) by using spin-coating technique at different rotation speeds. The nanostructure of Si surface was textured using alkaline based wet chemical etching process and SiNW was grown using metal assisted etching technique. The detailed surface morphology and absorbance of perovskite were studied in this paper. The results show that the thicknesses of MAPbI3 were reduced with the increasing of rotation speed. In addition, the perovskite layer deposited on the nanostructured Si wafer became rougher as the etching time and rotation speed increased. The average surface roughness increased from ∼24 nm to ∼38 nm for etching time range between 5-60 min at constant low rotation speed (2000 rpm) for SiNWs Si wafer.

Original languageEnglish
Title of host publication1st UKM-ISESCO-COMSATS International Workshop on Nanotechnology for Young Scientists, IWYS 2016
PublisherAmerican Institute of Physics Inc.
Volume1838
ISBN (Electronic)9780735415089
DOIs
Publication statusPublished - 5 May 2017
Event1st UKM-ISESCO-COMSATS International Workshop on Nanotechnology for Young Scientists, IWYS 2016 - Selangor, Malaysia
Duration: 28 Nov 201630 Nov 2016

Other

Other1st UKM-ISESCO-COMSATS International Workshop on Nanotechnology for Young Scientists, IWYS 2016
CountryMalaysia
CitySelangor
Period28/11/1630/11/16

Fingerprint

solar cells
wafers
etching
silicon
nanowires
planar structures
photons
carrier lifetime
carrier mobility
iodides
coating
surface roughness
evaporation
life (durability)
energy
configurations
cells
metals

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Rostan, N. F. M., Sepeai, S., Ramli, N. F., Azhari, A. W., Ahmad Ludin, N., Mat Teridi, M. A., ... Zaidi, S. H. (2017). Characterization of perovskite layer on various nanostructured silicon wafer. In 1st UKM-ISESCO-COMSATS International Workshop on Nanotechnology for Young Scientists, IWYS 2016 (Vol. 1838). [020020] American Institute of Physics Inc.. https://doi.org/10.1063/1.4982192

Characterization of perovskite layer on various nanostructured silicon wafer. / Rostan, Nur Fairuz Mohd; Sepeai, Suhaila; Ramli, Noor Fadhilah; Azhari, Ayu Wazira; Ahmad Ludin, Norasikin; Mat Teridi, Mohd Asri; Ibrahim, Mohd. Adib; Zaidi, Saleem H.

1st UKM-ISESCO-COMSATS International Workshop on Nanotechnology for Young Scientists, IWYS 2016. Vol. 1838 American Institute of Physics Inc., 2017. 020020.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Rostan, NFM, Sepeai, S, Ramli, NF, Azhari, AW, Ahmad Ludin, N, Mat Teridi, MA, Ibrahim, MA & Zaidi, SH 2017, Characterization of perovskite layer on various nanostructured silicon wafer. in 1st UKM-ISESCO-COMSATS International Workshop on Nanotechnology for Young Scientists, IWYS 2016. vol. 1838, 020020, American Institute of Physics Inc., 1st UKM-ISESCO-COMSATS International Workshop on Nanotechnology for Young Scientists, IWYS 2016, Selangor, Malaysia, 28/11/16. https://doi.org/10.1063/1.4982192
Rostan NFM, Sepeai S, Ramli NF, Azhari AW, Ahmad Ludin N, Mat Teridi MA et al. Characterization of perovskite layer on various nanostructured silicon wafer. In 1st UKM-ISESCO-COMSATS International Workshop on Nanotechnology for Young Scientists, IWYS 2016. Vol. 1838. American Institute of Physics Inc. 2017. 020020 https://doi.org/10.1063/1.4982192
Rostan, Nur Fairuz Mohd ; Sepeai, Suhaila ; Ramli, Noor Fadhilah ; Azhari, Ayu Wazira ; Ahmad Ludin, Norasikin ; Mat Teridi, Mohd Asri ; Ibrahim, Mohd. Adib ; Zaidi, Saleem H. / Characterization of perovskite layer on various nanostructured silicon wafer. 1st UKM-ISESCO-COMSATS International Workshop on Nanotechnology for Young Scientists, IWYS 2016. Vol. 1838 American Institute of Physics Inc., 2017.
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AU - Ahmad Ludin, Norasikin

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