Characterization of NBTI-induced positive charges in 16 nm FinFET

H. Hussin, N. Soin, S. Wan Muhamad Hatta, Muhammad Faiz Bukhori

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Negative Bias Temperature Instability (NBTI) is one of the most critical reliability problems in nano-scale p-MOSFETs. The NBTI-induced positive charges cause threshold voltage shifts, hence degrading the performance of the device. However, the characteristics of the positive charges (PC) in FinFET devices are currently not well-understood. In this work, a numerical simulation using an energy profiling technique on a 3D FinFET structure suggests that the positive charges are sensitive to energy level and differ considerably over the energy range, in agreement with the published measurements. The PCs which are distributed below, within and above the energy bandgap are known as as-grown hole traps (AHT), cyclic positive charges (CPC) and antineutralization positive charges (ANPC) respectively. The AHTs are found to be insensitive to stress time and temperature; the CPCs can saturate at longer stress time and higher stress temperatures; while the ANPCs do not saturate. The CPC density peak is found to be at Ef- Ev ∼ 1 eV, in quantitative agreement with published measurements from Hf-based p-MOSFET. The fin width is found to have observable effect on the location of the PC density peak along the energy range, hence robust optimization of the fin width is crucial for better immunity against NBTI.

Original languageEnglish
Title of host publicationProceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages365-368
Number of pages4
ISBN (Print)9781479983636
DOIs
Publication statusPublished - 30 Sep 2015
Event11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015 - Singapore, Singapore
Duration: 1 Jun 20154 Jun 2015

Other

Other11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015
CountrySingapore
CitySingapore
Period1/6/154/6/15

Fingerprint

Charge density
Hole traps
Threshold voltage
Electron energy levels
Energy gap
Temperature
Computer simulation
Negative bias temperature instability
FinFET

Keywords

  • energy distributions
  • FinFET
  • NBTI
  • positive charges
  • reliability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Hussin, H., Soin, N., Wan Muhamad Hatta, S., & Bukhori, M. F. (2015). Characterization of NBTI-induced positive charges in 16 nm FinFET. In Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015 (pp. 365-368). [7285126] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2015.7285126

Characterization of NBTI-induced positive charges in 16 nm FinFET. / Hussin, H.; Soin, N.; Wan Muhamad Hatta, S.; Bukhori, Muhammad Faiz.

Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 365-368 7285126.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hussin, H, Soin, N, Wan Muhamad Hatta, S & Bukhori, MF 2015, Characterization of NBTI-induced positive charges in 16 nm FinFET. in Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015., 7285126, Institute of Electrical and Electronics Engineers Inc., pp. 365-368, 11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015, Singapore, Singapore, 1/6/15. https://doi.org/10.1109/EDSSC.2015.7285126
Hussin H, Soin N, Wan Muhamad Hatta S, Bukhori MF. Characterization of NBTI-induced positive charges in 16 nm FinFET. In Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 365-368. 7285126 https://doi.org/10.1109/EDSSC.2015.7285126
Hussin, H. ; Soin, N. ; Wan Muhamad Hatta, S. ; Bukhori, Muhammad Faiz. / Characterization of NBTI-induced positive charges in 16 nm FinFET. Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 365-368
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