Abstract
We report graphene growth on polycrystalline Cobalt (Co) films by using induced coupled plasma RF-PECVD at 800°C temperature with 40 W plasma power. We also do the comparison by growing with and without plasma to observe the contribution of plasma in graphene growth on Cobalt films. Results show that the existence of plasma helps graphene formation meanwhile the existence of graphene is not observed with the absence of plasma. Plasma power is proven to generate high energy for decomposing methane forming radical carbon for the graphene growth mechanism. The as-grown graphene was characterized by using Raman Spectroscopy and Atomic force microscopy (AFM). The graphene was identified as multilayer from the Raman spectra. With the aid of plasma and proper optimization of the growth condition, the number of graphene layers can be tailored for low temperature substrate.
| Original language | English |
|---|---|
| Title of host publication | 2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 340-343 |
| Number of pages | 4 |
| Volume | 2016-September |
| ISBN (Electronic) | 9781509023837 |
| DOIs | |
| Publication status | Published - 21 Sep 2016 |
| Event | 12th IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Bangsar, Kuala Lumpur, Malaysia Duration: 17 Aug 2016 → 19 Aug 2016 |
Other
| Other | 12th IEEE International Conference on Semiconductor Electronics, ICSE 2016 |
|---|---|
| Country | Malaysia |
| City | Bangsar, Kuala Lumpur |
| Period | 17/8/16 → 19/8/16 |
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Keywords
- Cobalt films
- graphene growth
- PECVD
- Plasma
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Characterization of graphene growth using RF-PECVD on Cobalt films. / Khalid, Aishah; Mohamed, Mohd Ambri; Yeop Majlis, Burhanuddin; Azam, Mohd Asyadi.
2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings. Vol. 2016-September Institute of Electrical and Electronics Engineers Inc., 2016. p. 340-343 7573661.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Characterization of graphene growth using RF-PECVD on Cobalt films
AU - Khalid, Aishah
AU - Mohamed, Mohd Ambri
AU - Yeop Majlis, Burhanuddin
AU - Azam, Mohd Asyadi
PY - 2016/9/21
Y1 - 2016/9/21
N2 - We report graphene growth on polycrystalline Cobalt (Co) films by using induced coupled plasma RF-PECVD at 800°C temperature with 40 W plasma power. We also do the comparison by growing with and without plasma to observe the contribution of plasma in graphene growth on Cobalt films. Results show that the existence of plasma helps graphene formation meanwhile the existence of graphene is not observed with the absence of plasma. Plasma power is proven to generate high energy for decomposing methane forming radical carbon for the graphene growth mechanism. The as-grown graphene was characterized by using Raman Spectroscopy and Atomic force microscopy (AFM). The graphene was identified as multilayer from the Raman spectra. With the aid of plasma and proper optimization of the growth condition, the number of graphene layers can be tailored for low temperature substrate.
AB - We report graphene growth on polycrystalline Cobalt (Co) films by using induced coupled plasma RF-PECVD at 800°C temperature with 40 W plasma power. We also do the comparison by growing with and without plasma to observe the contribution of plasma in graphene growth on Cobalt films. Results show that the existence of plasma helps graphene formation meanwhile the existence of graphene is not observed with the absence of plasma. Plasma power is proven to generate high energy for decomposing methane forming radical carbon for the graphene growth mechanism. The as-grown graphene was characterized by using Raman Spectroscopy and Atomic force microscopy (AFM). The graphene was identified as multilayer from the Raman spectra. With the aid of plasma and proper optimization of the growth condition, the number of graphene layers can be tailored for low temperature substrate.
KW - Cobalt films
KW - graphene growth
KW - PECVD
KW - Plasma
UR - http://www.scopus.com/inward/record.url?scp=84990922530&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84990922530&partnerID=8YFLogxK
U2 - 10.1109/SMELEC.2016.7573661
DO - 10.1109/SMELEC.2016.7573661
M3 - Conference contribution
AN - SCOPUS:84990922530
VL - 2016-September
SP - 340
EP - 343
BT - 2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
ER -