Characterization of graphene growth using RF-PECVD on Cobalt films

Aishah Khalid, Mohd Ambri Mohamed, Burhanuddin Yeop Majlis, Mohd Asyadi Azam

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We report graphene growth on polycrystalline Cobalt (Co) films by using induced coupled plasma RF-PECVD at 800°C temperature with 40 W plasma power. We also do the comparison by growing with and without plasma to observe the contribution of plasma in graphene growth on Cobalt films. Results show that the existence of plasma helps graphene formation meanwhile the existence of graphene is not observed with the absence of plasma. Plasma power is proven to generate high energy for decomposing methane forming radical carbon for the graphene growth mechanism. The as-grown graphene was characterized by using Raman Spectroscopy and Atomic force microscopy (AFM). The graphene was identified as multilayer from the Raman spectra. With the aid of plasma and proper optimization of the growth condition, the number of graphene layers can be tailored for low temperature substrate.

Original languageEnglish
Title of host publication2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages340-343
Number of pages4
Volume2016-September
ISBN (Electronic)9781509023837
DOIs
Publication statusPublished - 21 Sep 2016
Event12th IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Bangsar, Kuala Lumpur, Malaysia
Duration: 17 Aug 201619 Aug 2016

Other

Other12th IEEE International Conference on Semiconductor Electronics, ICSE 2016
CountryMalaysia
CityBangsar, Kuala Lumpur
Period17/8/1619/8/16

Fingerprint

Graphite
Plasma enhanced chemical vapor deposition
Cobalt
Graphene
Plasmas
Methane
Raman spectroscopy
Raman scattering
Atomic force microscopy
Multilayers
Carbon
Temperature
Substrates

Keywords

  • Cobalt films
  • graphene growth
  • PECVD
  • Plasma

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Khalid, A., Mohamed, M. A., Yeop Majlis, B., & Azam, M. A. (2016). Characterization of graphene growth using RF-PECVD on Cobalt films. In 2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings (Vol. 2016-September, pp. 340-343). [7573661] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMELEC.2016.7573661

Characterization of graphene growth using RF-PECVD on Cobalt films. / Khalid, Aishah; Mohamed, Mohd Ambri; Yeop Majlis, Burhanuddin; Azam, Mohd Asyadi.

2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings. Vol. 2016-September Institute of Electrical and Electronics Engineers Inc., 2016. p. 340-343 7573661.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Khalid, A, Mohamed, MA, Yeop Majlis, B & Azam, MA 2016, Characterization of graphene growth using RF-PECVD on Cobalt films. in 2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings. vol. 2016-September, 7573661, Institute of Electrical and Electronics Engineers Inc., pp. 340-343, 12th IEEE International Conference on Semiconductor Electronics, ICSE 2016, Bangsar, Kuala Lumpur, Malaysia, 17/8/16. https://doi.org/10.1109/SMELEC.2016.7573661
Khalid A, Mohamed MA, Yeop Majlis B, Azam MA. Characterization of graphene growth using RF-PECVD on Cobalt films. In 2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings. Vol. 2016-September. Institute of Electrical and Electronics Engineers Inc. 2016. p. 340-343. 7573661 https://doi.org/10.1109/SMELEC.2016.7573661
Khalid, Aishah ; Mohamed, Mohd Ambri ; Yeop Majlis, Burhanuddin ; Azam, Mohd Asyadi. / Characterization of graphene growth using RF-PECVD on Cobalt films. 2016 IEEE International Conference on Semiconductor Electronics, ICSE 2016 - Proceedings. Vol. 2016-September Institute of Electrical and Electronics Engineers Inc., 2016. pp. 340-343
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