Characterization of fabrication process noises for 32nm NMOS devices

Husam Ahmed Elgomati, Burhanuddin Yeop Majlis, Ibrahim Ahmad, Taib Ziad

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper describes the effect of fabrication process noises to Sub-nanometer devices, which in this case a 32nm NMOS transistor. This experiment a part of a full Taguchi Method analysis to obtain an optimum fabrication recipe for the said transistor. The two noises introduced in the fabrication is ±1°C variation in sacrificial oxide layer growth by diffusion temperature and also silicide compress annealing temperature. In this project, a working 32 NMOS transistor fabrication is used. By increasing the sacrificial oxide layer diffusion temperature from 900°C to 901°C, the reference 32nm NMOS transistor threshold voltage (VTH) jumps from 0.1181V to 0.1394V, while leakage current drops from 0.111mA/um to 0.109 mA/um. By decreasing the silicide compress temperature from 910°C to 909°C, threshold voltage increase slightly from 0.118053V to 0.118068V, This shows a very different in magnitude of effect from same degree of noise introduce to the fabrication process.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Pages252-255
Number of pages4
DOIs
Publication statusPublished - 2010
Event2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010 - Melaka
Duration: 28 Jun 201030 Jun 2010

Other

Other2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010
CityMelaka
Period28/6/1030/6/10

Fingerprint

Transistors
Fabrication
Threshold voltage
Oxides
Temperature
Taguchi methods
Leakage currents
Annealing
Experiments

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Elgomati, H. A., Yeop Majlis, B., Ahmad, I., & Ziad, T. (2010). Characterization of fabrication process noises for 32nm NMOS devices. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 252-255). [5549581] https://doi.org/10.1109/SMELEC.2010.5549581

Characterization of fabrication process noises for 32nm NMOS devices. / Elgomati, Husam Ahmed; Yeop Majlis, Burhanuddin; Ahmad, Ibrahim; Ziad, Taib.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2010. p. 252-255 5549581.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Elgomati, HA, Yeop Majlis, B, Ahmad, I & Ziad, T 2010, Characterization of fabrication process noises for 32nm NMOS devices. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 5549581, pp. 252-255, 2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010, Melaka, 28/6/10. https://doi.org/10.1109/SMELEC.2010.5549581
Elgomati HA, Yeop Majlis B, Ahmad I, Ziad T. Characterization of fabrication process noises for 32nm NMOS devices. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2010. p. 252-255. 5549581 https://doi.org/10.1109/SMELEC.2010.5549581
Elgomati, Husam Ahmed ; Yeop Majlis, Burhanuddin ; Ahmad, Ibrahim ; Ziad, Taib. / Characterization of fabrication process noises for 32nm NMOS devices. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2010. pp. 252-255
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