Characterization of anisotropic etching effects of KOH concentration and temperature on etching profiles properties of silicon corrugated diaphragm

Norhayati Soin, Burhanuddin Yeop Majlis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this paper, silicon corrugated diaphragms with non-compensated mask layout have been designed and realized using anisotropic etching process simulator. The corrugated diaphragms have been etched on silicon (100) wafer by using potassium hydroxide solutions (KOH). The influence of the KOH etching temperature and concentration on the convex corner undercutting of corrugated diaphragm were observed. The convex corner behavior has been analyzed based on the geometrical parameters and the new emergent high index silicon planes. It was found that the convex corner undercutting phenomena is significantly reduced at low etching temperature and high KOH concentration respectively. It can be concluded that the prominent facets contributing to the undercutting of the convex corners of the corrugated diaphragm for the given etching condition coincide with the 411 plane.

Original languageEnglish
Title of host publicationAIP Conference Proceedings
Pages128-132
Number of pages5
Volume909
DOIs
Publication statusPublished - 2007
EventSOLID STATE SCIENCE AND TECHNOLOGY: 2nd International Conference on Solid State Science and Technology 2006, ICSSST 2006 - Kuala Terengganu
Duration: 4 Sep 20066 Sep 2006

Other

OtherSOLID STATE SCIENCE AND TECHNOLOGY: 2nd International Conference on Solid State Science and Technology 2006, ICSSST 2006
CityKuala Terengganu
Period4/9/066/9/06

Fingerprint

diaphragms
etching
silicon
profiles
potassium hydroxides
temperature
layouts
simulators
flat surfaces
masks
wafers

Keywords

  • Anisotropic etching
  • Convex corner undercutting
  • Corrugated diaphragm

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Characterization of anisotropic etching effects of KOH concentration and temperature on etching profiles properties of silicon corrugated diaphragm. / Soin, Norhayati; Yeop Majlis, Burhanuddin.

AIP Conference Proceedings. Vol. 909 2007. p. 128-132.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Soin, N & Yeop Majlis, B 2007, Characterization of anisotropic etching effects of KOH concentration and temperature on etching profiles properties of silicon corrugated diaphragm. in AIP Conference Proceedings. vol. 909, pp. 128-132, SOLID STATE SCIENCE AND TECHNOLOGY: 2nd International Conference on Solid State Science and Technology 2006, ICSSST 2006, Kuala Terengganu, 4/9/06. https://doi.org/10.1063/1.2739838
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AB - In this paper, silicon corrugated diaphragms with non-compensated mask layout have been designed and realized using anisotropic etching process simulator. The corrugated diaphragms have been etched on silicon (100) wafer by using potassium hydroxide solutions (KOH). The influence of the KOH etching temperature and concentration on the convex corner undercutting of corrugated diaphragm were observed. The convex corner behavior has been analyzed based on the geometrical parameters and the new emergent high index silicon planes. It was found that the convex corner undercutting phenomena is significantly reduced at low etching temperature and high KOH concentration respectively. It can be concluded that the prominent facets contributing to the undercutting of the convex corners of the corrugated diaphragm for the given etching condition coincide with the 411 plane.

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