Characterization of 0.5μm BiCMOS gate oxide using time dependent dielectric breakdown test

Mohd Zahrin A Wahab, Azman Jalar @ Jalil, Shahrum Abdullah, Hazian Mamat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents Time Dependent Dielectric Breakdown (TDDB) testing of gate oxide on 0.5μm BiCMOS Technology. The gate oxide quality for the technology has been investigated and furthermore to qualify the whole set up of the foundry from the process, equipment, cleanroom control and raw material used to produce high quality gate oxide and hence good quality of BiCMOS devices. TDDB test is the most widely used testing to check the quality of gate oxide and in this paper the TDDB test done on MOS capacitors fabricated using 0.5 μm BiCMOS Technology. Seven consecutive qualification lots have been tested and the data shown that TDDB measurement is capable to differentiate between accepted wafer and rejected wafer. The data also shown that TDDB test was capable to characterise 0.5 μm BiCMOS gate oxide with higher yield and comparable with reference lot from other foundry fab.

Original languageEnglish
Title of host publicationAdvanced Materials Research
Pages40-44
Number of pages5
Volume97-101
DOIs
Publication statusPublished - 2010
Event2009 International Conference on Manufacturing Science and Engineering, ICMSE 2009 - Zhuhai
Duration: 26 Dec 200928 Dec 2009

Publication series

NameAdvanced Materials Research
Volume97-101
ISSN (Print)10226680

Other

Other2009 International Conference on Manufacturing Science and Engineering, ICMSE 2009
CityZhuhai
Period26/12/0928/12/09

Fingerprint

Electric breakdown
Oxides
BiCMOS technology
Foundries
MOS capacitors
Control equipment
Testing
Raw materials

Keywords

  • GOI
  • JRamp
  • TDDB
  • VRamp

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Wahab, M. Z. A., Jalar @ Jalil, A., Abdullah, S., & Mamat, H. (2010). Characterization of 0.5μm BiCMOS gate oxide using time dependent dielectric breakdown test. In Advanced Materials Research (Vol. 97-101, pp. 40-44). (Advanced Materials Research; Vol. 97-101). https://doi.org/10.4028/www.scientific.net/AMR.97-101.40

Characterization of 0.5μm BiCMOS gate oxide using time dependent dielectric breakdown test. / Wahab, Mohd Zahrin A; Jalar @ Jalil, Azman; Abdullah, Shahrum; Mamat, Hazian.

Advanced Materials Research. Vol. 97-101 2010. p. 40-44 (Advanced Materials Research; Vol. 97-101).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wahab, MZA, Jalar @ Jalil, A, Abdullah, S & Mamat, H 2010, Characterization of 0.5μm BiCMOS gate oxide using time dependent dielectric breakdown test. in Advanced Materials Research. vol. 97-101, Advanced Materials Research, vol. 97-101, pp. 40-44, 2009 International Conference on Manufacturing Science and Engineering, ICMSE 2009, Zhuhai, 26/12/09. https://doi.org/10.4028/www.scientific.net/AMR.97-101.40
Wahab, Mohd Zahrin A ; Jalar @ Jalil, Azman ; Abdullah, Shahrum ; Mamat, Hazian. / Characterization of 0.5μm BiCMOS gate oxide using time dependent dielectric breakdown test. Advanced Materials Research. Vol. 97-101 2010. pp. 40-44 (Advanced Materials Research).
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