Characterization direct bonding of SiC/SiN layer on Si wafer for MEMS capacitive pressure sensor

Noraini Marsi, Burhanuddin Yeop Majlis, Azrul Azlan Hamzah, Faisal Mohd Yasin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Two silicon wafer size of 2.5 mm × 2.5 mm with 1 μm LPCVD silicon carbide (SiC) and 200 nm LPCVD silicon nitride, respectively has been characterize direct bonding between silicon nitride and silicon carbide surfaces. Chemical-mechanical polishing (CMP) treatment processes were performed to reduce the surface roughness of both surfaces before the surface are bonded to each other. The surface roughness shows about 1 μm before CMP treatment, while the smoothness of the surface roughness values as low as 20 nm was obtained after CMP treatment as measured by infinite focus microscopy (IFM). The interface between SiC/SiN layers on Si wafer was inspected by scanning electron microscopy (SEM). Heat treatment with different annealing temperatures is indentified that an optimized annealing process was at 400 °C for 2 hours to allow the bond-forming interface between silicon nitride and silicon carbide surfaces being bonded at 8.3467 MPa.

Original languageEnglish
Title of host publicationProceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics
Pages50-53
Number of pages4
DOIs
Publication statusPublished - 2013
Event2013 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2013 - Langkawi
Duration: 25 Sep 201327 Sep 2013

Other

Other2013 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2013
CityLangkawi
Period25/9/1327/9/13

Fingerprint

Capacitive sensors
Pressure sensors
Silicon carbide
Chemical mechanical polishing
MEMS
Silicon nitride
Surface roughness
Annealing
Silicon wafers
Microscopic examination
Heat treatment
Scanning electron microscopy
Temperature

Keywords

  • Chemical-mechanical polishing (CMP)
  • direct bonding
  • pressure sensor
  • Silicon Carbide
  • Silicon Nitride

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Marsi, N., Yeop Majlis, B., Hamzah, A. A., & Yasin, F. M. (2013). Characterization direct bonding of SiC/SiN layer on Si wafer for MEMS capacitive pressure sensor. In Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics (pp. 50-53). [6706470] https://doi.org/10.1109/RSM.2013.6706470

Characterization direct bonding of SiC/SiN layer on Si wafer for MEMS capacitive pressure sensor. / Marsi, Noraini; Yeop Majlis, Burhanuddin; Hamzah, Azrul Azlan; Yasin, Faisal Mohd.

Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics. 2013. p. 50-53 6706470.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Marsi, N, Yeop Majlis, B, Hamzah, AA & Yasin, FM 2013, Characterization direct bonding of SiC/SiN layer on Si wafer for MEMS capacitive pressure sensor. in Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics., 6706470, pp. 50-53, 2013 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2013, Langkawi, 25/9/13. https://doi.org/10.1109/RSM.2013.6706470
Marsi N, Yeop Majlis B, Hamzah AA, Yasin FM. Characterization direct bonding of SiC/SiN layer on Si wafer for MEMS capacitive pressure sensor. In Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics. 2013. p. 50-53. 6706470 https://doi.org/10.1109/RSM.2013.6706470
Marsi, Noraini ; Yeop Majlis, Burhanuddin ; Hamzah, Azrul Azlan ; Yasin, Faisal Mohd. / Characterization direct bonding of SiC/SiN layer on Si wafer for MEMS capacitive pressure sensor. Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics. 2013. pp. 50-53
@inproceedings{b8d504af8c4e42eabba61dc3005402cc,
title = "Characterization direct bonding of SiC/SiN layer on Si wafer for MEMS capacitive pressure sensor",
abstract = "Two silicon wafer size of 2.5 mm × 2.5 mm with 1 μm LPCVD silicon carbide (SiC) and 200 nm LPCVD silicon nitride, respectively has been characterize direct bonding between silicon nitride and silicon carbide surfaces. Chemical-mechanical polishing (CMP) treatment processes were performed to reduce the surface roughness of both surfaces before the surface are bonded to each other. The surface roughness shows about 1 μm before CMP treatment, while the smoothness of the surface roughness values as low as 20 nm was obtained after CMP treatment as measured by infinite focus microscopy (IFM). The interface between SiC/SiN layers on Si wafer was inspected by scanning electron microscopy (SEM). Heat treatment with different annealing temperatures is indentified that an optimized annealing process was at 400 °C for 2 hours to allow the bond-forming interface between silicon nitride and silicon carbide surfaces being bonded at 8.3467 MPa.",
keywords = "Chemical-mechanical polishing (CMP), direct bonding, pressure sensor, Silicon Carbide, Silicon Nitride",
author = "Noraini Marsi and {Yeop Majlis}, Burhanuddin and Hamzah, {Azrul Azlan} and Yasin, {Faisal Mohd}",
year = "2013",
doi = "10.1109/RSM.2013.6706470",
language = "English",
isbn = "9781479911837",
pages = "50--53",
booktitle = "Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics",

}

TY - GEN

T1 - Characterization direct bonding of SiC/SiN layer on Si wafer for MEMS capacitive pressure sensor

AU - Marsi, Noraini

AU - Yeop Majlis, Burhanuddin

AU - Hamzah, Azrul Azlan

AU - Yasin, Faisal Mohd

PY - 2013

Y1 - 2013

N2 - Two silicon wafer size of 2.5 mm × 2.5 mm with 1 μm LPCVD silicon carbide (SiC) and 200 nm LPCVD silicon nitride, respectively has been characterize direct bonding between silicon nitride and silicon carbide surfaces. Chemical-mechanical polishing (CMP) treatment processes were performed to reduce the surface roughness of both surfaces before the surface are bonded to each other. The surface roughness shows about 1 μm before CMP treatment, while the smoothness of the surface roughness values as low as 20 nm was obtained after CMP treatment as measured by infinite focus microscopy (IFM). The interface between SiC/SiN layers on Si wafer was inspected by scanning electron microscopy (SEM). Heat treatment with different annealing temperatures is indentified that an optimized annealing process was at 400 °C for 2 hours to allow the bond-forming interface between silicon nitride and silicon carbide surfaces being bonded at 8.3467 MPa.

AB - Two silicon wafer size of 2.5 mm × 2.5 mm with 1 μm LPCVD silicon carbide (SiC) and 200 nm LPCVD silicon nitride, respectively has been characterize direct bonding between silicon nitride and silicon carbide surfaces. Chemical-mechanical polishing (CMP) treatment processes were performed to reduce the surface roughness of both surfaces before the surface are bonded to each other. The surface roughness shows about 1 μm before CMP treatment, while the smoothness of the surface roughness values as low as 20 nm was obtained after CMP treatment as measured by infinite focus microscopy (IFM). The interface between SiC/SiN layers on Si wafer was inspected by scanning electron microscopy (SEM). Heat treatment with different annealing temperatures is indentified that an optimized annealing process was at 400 °C for 2 hours to allow the bond-forming interface between silicon nitride and silicon carbide surfaces being bonded at 8.3467 MPa.

KW - Chemical-mechanical polishing (CMP)

KW - direct bonding

KW - pressure sensor

KW - Silicon Carbide

KW - Silicon Nitride

UR - http://www.scopus.com/inward/record.url?scp=84893617744&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84893617744&partnerID=8YFLogxK

U2 - 10.1109/RSM.2013.6706470

DO - 10.1109/RSM.2013.6706470

M3 - Conference contribution

SN - 9781479911837

SP - 50

EP - 53

BT - Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics

ER -