Characterisation of sheet resistivity and contact resistivity for source/drain of n-MOSFET device

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Abstract

In this study, the sheet resistivity (ps) of the thin film phosphorus ion source/drain implantation regions, and the specific interfacial contact resistivity (pc) between the thin film aluminium 1% silicon electrode layer and the thin film phosphorus ion source/drain implantation regions of the n-channel metal-oxide-semiconductor field effect transistor (n-MOSFET) devices have been characterised using the Greek cross and Kelvin resistor test structures. From TSUPREM-4, the dose and energy of the phosphorus ion beam have been simulated to influence the sheet resistivity of the source/drain implantation regions. The secondary ion mass spectrometry (SIMS) measurement has verified the simulated surface concentration of the phosphorus ions. The measurements from the test structures have shown that the sheet resistivity and the specific interfacial contact resistivity of the source/drain terminals varied across the wafer. The influence of the heart size from the Greek cross structure and the contact area size from the Kelvin resistor structure have been investigated. In our application, the phosphorus ion dose of 1e16 ions/cm2 and energy of 40 keV have been measured to provide the desired small sheet resistivity of ps = 25.93 Ω/□. From the measured interfacial contact resistivity of pc∼10∼-4 Ωcm2, the interfacial contact area for the source/drain regions have been designed to be approximately 80 μm × 40 μm in order to achieve the reasonable interfacial contact resistance of Rc = 3 Ω. The fabrication design for the source/drain of the n-MOSFET devices is optimised in order to obtain good drain current conduction with small resistances.

Original languageEnglish
Pages (from-to)29-36
Number of pages8
JournalJournal of Telecommunication, Electronic and Computer Engineering
Volume6
Issue number2
Publication statusPublished - 1 Jul 2014
Externally publishedYes

Fingerprint

MOSFET devices
Phosphorus
Ion sources
Ion implantation
Thin films
Resistors
Ions
Drain current
Contact resistance
Secondary ion mass spectrometry
Ion beams
Aluminum
Fabrication
Silicon
Electrodes

Keywords

  • And sheet resistivity
  • Contact resistivity
  • Greek cross
  • Kelvin resistor

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

@article{7768d3e9f4494888ac8f7b0f49a36e90,
title = "Characterisation of sheet resistivity and contact resistivity for source/drain of n-MOSFET device",
abstract = "In this study, the sheet resistivity (ps) of the thin film phosphorus ion source/drain implantation regions, and the specific interfacial contact resistivity (pc) between the thin film aluminium 1{\%} silicon electrode layer and the thin film phosphorus ion source/drain implantation regions of the n-channel metal-oxide-semiconductor field effect transistor (n-MOSFET) devices have been characterised using the Greek cross and Kelvin resistor test structures. From TSUPREM-4, the dose and energy of the phosphorus ion beam have been simulated to influence the sheet resistivity of the source/drain implantation regions. The secondary ion mass spectrometry (SIMS) measurement has verified the simulated surface concentration of the phosphorus ions. The measurements from the test structures have shown that the sheet resistivity and the specific interfacial contact resistivity of the source/drain terminals varied across the wafer. The influence of the heart size from the Greek cross structure and the contact area size from the Kelvin resistor structure have been investigated. In our application, the phosphorus ion dose of 1e16 ions/cm2 and energy of 40 keV have been measured to provide the desired small sheet resistivity of ps = 25.93 Ω/□. From the measured interfacial contact resistivity of pc∼10∼-4 Ωcm2, the interfacial contact area for the source/drain regions have been designed to be approximately 80 μm × 40 μm in order to achieve the reasonable interfacial contact resistance of Rc = 3 Ω. The fabrication design for the source/drain of the n-MOSFET devices is optimised in order to obtain good drain current conduction with small resistances.",
keywords = "And sheet resistivity, Contact resistivity, Greek cross, Kelvin resistor",
author = "Latif Rhonira",
year = "2014",
month = "7",
day = "1",
language = "English",
volume = "6",
pages = "29--36",
journal = "Journal of Telecommunication, Electronic and Computer Engineering",
issn = "2180-1843",
publisher = "Universiti Teknikal Malaysia Melaka",
number = "2",

}

TY - JOUR

T1 - Characterisation of sheet resistivity and contact resistivity for source/drain of n-MOSFET device

AU - Rhonira, Latif

PY - 2014/7/1

Y1 - 2014/7/1

N2 - In this study, the sheet resistivity (ps) of the thin film phosphorus ion source/drain implantation regions, and the specific interfacial contact resistivity (pc) between the thin film aluminium 1% silicon electrode layer and the thin film phosphorus ion source/drain implantation regions of the n-channel metal-oxide-semiconductor field effect transistor (n-MOSFET) devices have been characterised using the Greek cross and Kelvin resistor test structures. From TSUPREM-4, the dose and energy of the phosphorus ion beam have been simulated to influence the sheet resistivity of the source/drain implantation regions. The secondary ion mass spectrometry (SIMS) measurement has verified the simulated surface concentration of the phosphorus ions. The measurements from the test structures have shown that the sheet resistivity and the specific interfacial contact resistivity of the source/drain terminals varied across the wafer. The influence of the heart size from the Greek cross structure and the contact area size from the Kelvin resistor structure have been investigated. In our application, the phosphorus ion dose of 1e16 ions/cm2 and energy of 40 keV have been measured to provide the desired small sheet resistivity of ps = 25.93 Ω/□. From the measured interfacial contact resistivity of pc∼10∼-4 Ωcm2, the interfacial contact area for the source/drain regions have been designed to be approximately 80 μm × 40 μm in order to achieve the reasonable interfacial contact resistance of Rc = 3 Ω. The fabrication design for the source/drain of the n-MOSFET devices is optimised in order to obtain good drain current conduction with small resistances.

AB - In this study, the sheet resistivity (ps) of the thin film phosphorus ion source/drain implantation regions, and the specific interfacial contact resistivity (pc) between the thin film aluminium 1% silicon electrode layer and the thin film phosphorus ion source/drain implantation regions of the n-channel metal-oxide-semiconductor field effect transistor (n-MOSFET) devices have been characterised using the Greek cross and Kelvin resistor test structures. From TSUPREM-4, the dose and energy of the phosphorus ion beam have been simulated to influence the sheet resistivity of the source/drain implantation regions. The secondary ion mass spectrometry (SIMS) measurement has verified the simulated surface concentration of the phosphorus ions. The measurements from the test structures have shown that the sheet resistivity and the specific interfacial contact resistivity of the source/drain terminals varied across the wafer. The influence of the heart size from the Greek cross structure and the contact area size from the Kelvin resistor structure have been investigated. In our application, the phosphorus ion dose of 1e16 ions/cm2 and energy of 40 keV have been measured to provide the desired small sheet resistivity of ps = 25.93 Ω/□. From the measured interfacial contact resistivity of pc∼10∼-4 Ωcm2, the interfacial contact area for the source/drain regions have been designed to be approximately 80 μm × 40 μm in order to achieve the reasonable interfacial contact resistance of Rc = 3 Ω. The fabrication design for the source/drain of the n-MOSFET devices is optimised in order to obtain good drain current conduction with small resistances.

KW - And sheet resistivity

KW - Contact resistivity

KW - Greek cross

KW - Kelvin resistor

UR - http://www.scopus.com/inward/record.url?scp=84922463033&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84922463033&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:84922463033

VL - 6

SP - 29

EP - 36

JO - Journal of Telecommunication, Electronic and Computer Engineering

JF - Journal of Telecommunication, Electronic and Computer Engineering

SN - 2180-1843

IS - 2

ER -