Characterisation of polysilicon gate microstructures for 0.5 μm CMOS devices using transmission electron microscopy and atomic force microscopy images

Ibrahim Ahmad, Abdullah Omar, Aini Hussain, Anuar Mikdad Muad

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4 Citations (Scopus)

Abstract

This paper considers two different doping methods and compares their impact on the polysilicon's microstructures when doped with phosphorous by using the transmission electron microscopy (TEM) and atomic force microscopy (AFM) images. The two doping methods considered are the in situ (or also known as thermal diffusion) and ion implantation. For the in situ method, phosphane (PH3) with concentration of 1.8 × 1020 cm-3 was used while for the ion implantation, two different doses were used: 2.0 × 1016 and 3 × 1016 cm-2 at 40 keV. The surface roughness of the polysilicon microstructure obtained via the in situ method measures between 12 and 26 nm with a peak roughness of 14 nm and grain size of 4 μm. As for the ion implantation method, at lower dose the microstructure surface roughness varies from 12 to 46 nm with a peak roughness of 34 nm while the grain size measures between 100 and 200 nm. At higher dose, the surface roughness varies from 12 to 48 nm and the peak roughness measuring at 36 nm. The grain size was between 500 and 800 nm. Comparing the TEM and AFM images of the in situ method to ion implantation method reveals that the polysilicon doped by the in situ method has larger grains, smoother and thinner microstructure properties resulting in better gate morphology control.

Original languageEnglish
Pages (from-to)362-367
Number of pages6
JournalApplied Surface Science
Volume191
Issue number1-4
DOIs
Publication statusPublished - 17 May 2002

Fingerprint

Polysilicon
ion implantation
Atomic force microscopy
CMOS
Surface roughness
atomic force microscopy
Transmission electron microscopy
Ion implantation
surface roughness
transmission electron microscopy
microstructure
Microstructure
roughness
grain size
dosage
phosphine
thermal diffusion
Doping (additives)
Thermal diffusion

Keywords

  • Ion implantation and surface morphology
  • Polysilicon gate
  • Thermal diffusion (in situ)

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

@article{a988c5a3419e41b09b0595ee2b1576cb,
title = "Characterisation of polysilicon gate microstructures for 0.5 μm CMOS devices using transmission electron microscopy and atomic force microscopy images",
abstract = "This paper considers two different doping methods and compares their impact on the polysilicon's microstructures when doped with phosphorous by using the transmission electron microscopy (TEM) and atomic force microscopy (AFM) images. The two doping methods considered are the in situ (or also known as thermal diffusion) and ion implantation. For the in situ method, phosphane (PH3) with concentration of 1.8 × 1020 cm-3 was used while for the ion implantation, two different doses were used: 2.0 × 1016 and 3 × 1016 cm-2 at 40 keV. The surface roughness of the polysilicon microstructure obtained via the in situ method measures between 12 and 26 nm with a peak roughness of 14 nm and grain size of 4 μm. As for the ion implantation method, at lower dose the microstructure surface roughness varies from 12 to 46 nm with a peak roughness of 34 nm while the grain size measures between 100 and 200 nm. At higher dose, the surface roughness varies from 12 to 48 nm and the peak roughness measuring at 36 nm. The grain size was between 500 and 800 nm. Comparing the TEM and AFM images of the in situ method to ion implantation method reveals that the polysilicon doped by the in situ method has larger grains, smoother and thinner microstructure properties resulting in better gate morphology control.",
keywords = "Ion implantation and surface morphology, Polysilicon gate, Thermal diffusion (in situ)",
author = "Ibrahim Ahmad and Abdullah Omar and Aini Hussain and Muad, {Anuar Mikdad}",
year = "2002",
month = "5",
day = "17",
doi = "10.1016/S0169-4332(02)00226-X",
language = "English",
volume = "191",
pages = "362--367",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Characterisation of polysilicon gate microstructures for 0.5 μm CMOS devices using transmission electron microscopy and atomic force microscopy images

AU - Ahmad, Ibrahim

AU - Omar, Abdullah

AU - Hussain, Aini

AU - Muad, Anuar Mikdad

PY - 2002/5/17

Y1 - 2002/5/17

N2 - This paper considers two different doping methods and compares their impact on the polysilicon's microstructures when doped with phosphorous by using the transmission electron microscopy (TEM) and atomic force microscopy (AFM) images. The two doping methods considered are the in situ (or also known as thermal diffusion) and ion implantation. For the in situ method, phosphane (PH3) with concentration of 1.8 × 1020 cm-3 was used while for the ion implantation, two different doses were used: 2.0 × 1016 and 3 × 1016 cm-2 at 40 keV. The surface roughness of the polysilicon microstructure obtained via the in situ method measures between 12 and 26 nm with a peak roughness of 14 nm and grain size of 4 μm. As for the ion implantation method, at lower dose the microstructure surface roughness varies from 12 to 46 nm with a peak roughness of 34 nm while the grain size measures between 100 and 200 nm. At higher dose, the surface roughness varies from 12 to 48 nm and the peak roughness measuring at 36 nm. The grain size was between 500 and 800 nm. Comparing the TEM and AFM images of the in situ method to ion implantation method reveals that the polysilicon doped by the in situ method has larger grains, smoother and thinner microstructure properties resulting in better gate morphology control.

AB - This paper considers two different doping methods and compares their impact on the polysilicon's microstructures when doped with phosphorous by using the transmission electron microscopy (TEM) and atomic force microscopy (AFM) images. The two doping methods considered are the in situ (or also known as thermal diffusion) and ion implantation. For the in situ method, phosphane (PH3) with concentration of 1.8 × 1020 cm-3 was used while for the ion implantation, two different doses were used: 2.0 × 1016 and 3 × 1016 cm-2 at 40 keV. The surface roughness of the polysilicon microstructure obtained via the in situ method measures between 12 and 26 nm with a peak roughness of 14 nm and grain size of 4 μm. As for the ion implantation method, at lower dose the microstructure surface roughness varies from 12 to 46 nm with a peak roughness of 34 nm while the grain size measures between 100 and 200 nm. At higher dose, the surface roughness varies from 12 to 48 nm and the peak roughness measuring at 36 nm. The grain size was between 500 and 800 nm. Comparing the TEM and AFM images of the in situ method to ion implantation method reveals that the polysilicon doped by the in situ method has larger grains, smoother and thinner microstructure properties resulting in better gate morphology control.

KW - Ion implantation and surface morphology

KW - Polysilicon gate

KW - Thermal diffusion (in situ)

UR - http://www.scopus.com/inward/record.url?scp=0037123487&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037123487&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(02)00226-X

DO - 10.1016/S0169-4332(02)00226-X

M3 - Article

VL - 191

SP - 362

EP - 367

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 1-4

ER -