Channel length scaling and electrical characterization of graphene field effect transistor (GFET)

Reena Sri Selvarajan, Burhanuddin Yeop Majlis, Norliana Yusof, Azrul Azlan Hamzah

Research output: Contribution to journalArticle

Abstract

The exclusive monoatomic framework of graphene makes it as an alluring material to be implemented in electronic devices. Thus, using graphene as charge carrying conducting channel material in Field Effect Transistors (FET) expedites the opportunities for production of ultrasensitive biosensors for future device applications. However, performance of GFET is influenced by various parameters, particularly by the length of conducting channel. Therefore, in this study we have investigated channel length scaling in performance of graphene field effect transistor (GFET) via simulation technique using Lumerical DEVICE software. The performance was analyzed based on electrical characterization of GFET with long and short conducting channels. It proves that conducting channel lengths have vast effect on ambipolar curve where short channel induces asymmetry in transfer characteristics curve where the n-branch is suppressed. Whereas for output characteristics, the performance of GFET heavily degraded as the channel length is reduced in short channels of GFET. Therefore, channel length scaling is a vital parameter in determining the performance of GFET in various fields, particularly in biosensing applications for ultrasensitive detection.

Original languageEnglish
Pages (from-to)697-703
Number of pages7
JournalIndonesian Journal of Electrical Engineering and Computer Science
Volume15
Issue number2
DOIs
Publication statusPublished - 1 Aug 2019

Fingerprint

Field-effect Transistor
Graphene
Field effect transistors
Scaling
Biosensing
Characteristic Curve
Biosensor
Biosensors
Asymmetry
Branch
Charge
Electronics
Curve
Software
Output

Keywords

  • Ambipolar
  • Channel length
  • GFET
  • Short channel effect
  • Transfer characteristics

ASJC Scopus subject areas

  • Signal Processing
  • Information Systems
  • Hardware and Architecture
  • Computer Networks and Communications
  • Control and Optimization
  • Electrical and Electronic Engineering

Cite this

Channel length scaling and electrical characterization of graphene field effect transistor (GFET). / Selvarajan, Reena Sri; Yeop Majlis, Burhanuddin; Yusof, Norliana; Hamzah, Azrul Azlan.

In: Indonesian Journal of Electrical Engineering and Computer Science, Vol. 15, No. 2, 01.08.2019, p. 697-703.

Research output: Contribution to journalArticle

@article{8685184de4c24d8bbb665c29b6081163,
title = "Channel length scaling and electrical characterization of graphene field effect transistor (GFET)",
abstract = "The exclusive monoatomic framework of graphene makes it as an alluring material to be implemented in electronic devices. Thus, using graphene as charge carrying conducting channel material in Field Effect Transistors (FET) expedites the opportunities for production of ultrasensitive biosensors for future device applications. However, performance of GFET is influenced by various parameters, particularly by the length of conducting channel. Therefore, in this study we have investigated channel length scaling in performance of graphene field effect transistor (GFET) via simulation technique using Lumerical DEVICE software. The performance was analyzed based on electrical characterization of GFET with long and short conducting channels. It proves that conducting channel lengths have vast effect on ambipolar curve where short channel induces asymmetry in transfer characteristics curve where the n-branch is suppressed. Whereas for output characteristics, the performance of GFET heavily degraded as the channel length is reduced in short channels of GFET. Therefore, channel length scaling is a vital parameter in determining the performance of GFET in various fields, particularly in biosensing applications for ultrasensitive detection.",
keywords = "Ambipolar, Channel length, GFET, Short channel effect, Transfer characteristics",
author = "Selvarajan, {Reena Sri} and {Yeop Majlis}, Burhanuddin and Norliana Yusof and Hamzah, {Azrul Azlan}",
year = "2019",
month = "8",
day = "1",
doi = "10.11591/ijeecs.v15.i2.pp697-703",
language = "English",
volume = "15",
pages = "697--703",
journal = "Indonesian Journal of Electrical Engineering and Computer Science",
issn = "2502-4752",
publisher = "Institute of Advanced Engineering and Science (IAES)",
number = "2",

}

TY - JOUR

T1 - Channel length scaling and electrical characterization of graphene field effect transistor (GFET)

AU - Selvarajan, Reena Sri

AU - Yeop Majlis, Burhanuddin

AU - Yusof, Norliana

AU - Hamzah, Azrul Azlan

PY - 2019/8/1

Y1 - 2019/8/1

N2 - The exclusive monoatomic framework of graphene makes it as an alluring material to be implemented in electronic devices. Thus, using graphene as charge carrying conducting channel material in Field Effect Transistors (FET) expedites the opportunities for production of ultrasensitive biosensors for future device applications. However, performance of GFET is influenced by various parameters, particularly by the length of conducting channel. Therefore, in this study we have investigated channel length scaling in performance of graphene field effect transistor (GFET) via simulation technique using Lumerical DEVICE software. The performance was analyzed based on electrical characterization of GFET with long and short conducting channels. It proves that conducting channel lengths have vast effect on ambipolar curve where short channel induces asymmetry in transfer characteristics curve where the n-branch is suppressed. Whereas for output characteristics, the performance of GFET heavily degraded as the channel length is reduced in short channels of GFET. Therefore, channel length scaling is a vital parameter in determining the performance of GFET in various fields, particularly in biosensing applications for ultrasensitive detection.

AB - The exclusive monoatomic framework of graphene makes it as an alluring material to be implemented in electronic devices. Thus, using graphene as charge carrying conducting channel material in Field Effect Transistors (FET) expedites the opportunities for production of ultrasensitive biosensors for future device applications. However, performance of GFET is influenced by various parameters, particularly by the length of conducting channel. Therefore, in this study we have investigated channel length scaling in performance of graphene field effect transistor (GFET) via simulation technique using Lumerical DEVICE software. The performance was analyzed based on electrical characterization of GFET with long and short conducting channels. It proves that conducting channel lengths have vast effect on ambipolar curve where short channel induces asymmetry in transfer characteristics curve where the n-branch is suppressed. Whereas for output characteristics, the performance of GFET heavily degraded as the channel length is reduced in short channels of GFET. Therefore, channel length scaling is a vital parameter in determining the performance of GFET in various fields, particularly in biosensing applications for ultrasensitive detection.

KW - Ambipolar

KW - Channel length

KW - GFET

KW - Short channel effect

KW - Transfer characteristics

UR - http://www.scopus.com/inward/record.url?scp=85069685978&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85069685978&partnerID=8YFLogxK

U2 - 10.11591/ijeecs.v15.i2.pp697-703

DO - 10.11591/ijeecs.v15.i2.pp697-703

M3 - Article

AN - SCOPUS:85069685978

VL - 15

SP - 697

EP - 703

JO - Indonesian Journal of Electrical Engineering and Computer Science

JF - Indonesian Journal of Electrical Engineering and Computer Science

SN - 2502-4752

IS - 2

ER -