Channel length effect on the saturation current and the threshold voltages of CNTFET

Abu Hanifah Muhamad Ali, M. H. Ani, Mohd Ambri Mohamed

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Carbon nanotubes (CNTs) are such promising material in future microelectronic devices due to their great property in conductivity, mechanical strength and light weight. Field effect transistor (FET) has already come to its most maximum efficiency because of their reduced size leads to decrease in their capability in conducting electric. It is interested to embed ballistic electron transfer capability of CNTs on FET. In this study, direct growth method of CNTs was employed to attach it on FET electrodes with various terminal gaps. The results show that CNTFET has successfully fabricated, with averaged saturation currents always lowest at the channel size of 15μm. While their highest measured threshold voltage value is 4.291 V at 15 μm gap. This phenomenon is attributed to the change of CNTs' chirality, which apparently changes the metallic type of CNTs to the semiconducting CNTs.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages267-269
Number of pages3
ISBN (Print)9781479957606
DOIs
Publication statusPublished - 10 Oct 2014
Event11th IEEE International Conference on Semiconductor Electronics, ICSE 2014 - Kuala Lumpur
Duration: 27 Aug 201429 Aug 2014

Other

Other11th IEEE International Conference on Semiconductor Electronics, ICSE 2014
CityKuala Lumpur
Period27/8/1429/8/14

Fingerprint

Carbon Nanotubes
Threshold voltage
Carbon nanotubes
Field effect transistors
Chirality
Ballistics
Microelectronics
Strength of materials
Electrodes
Electrons

Keywords

  • Chirality
  • CNTFET
  • Direct Growth Method
  • Transconductance

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Ali, A. H. M., Ani, M. H., & Mohamed, M. A. (2014). Channel length effect on the saturation current and the threshold voltages of CNTFET. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 267-269). [6920848] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMELEC.2014.6920848

Channel length effect on the saturation current and the threshold voltages of CNTFET. / Ali, Abu Hanifah Muhamad; Ani, M. H.; Mohamed, Mohd Ambri.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc., 2014. p. 267-269 6920848.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ali, AHM, Ani, MH & Mohamed, MA 2014, Channel length effect on the saturation current and the threshold voltages of CNTFET. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 6920848, Institute of Electrical and Electronics Engineers Inc., pp. 267-269, 11th IEEE International Conference on Semiconductor Electronics, ICSE 2014, Kuala Lumpur, 27/8/14. https://doi.org/10.1109/SMELEC.2014.6920848
Ali AHM, Ani MH, Mohamed MA. Channel length effect on the saturation current and the threshold voltages of CNTFET. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc. 2014. p. 267-269. 6920848 https://doi.org/10.1109/SMELEC.2014.6920848
Ali, Abu Hanifah Muhamad ; Ani, M. H. ; Mohamed, Mohd Ambri. / Channel length effect on the saturation current and the threshold voltages of CNTFET. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 267-269
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