Carbon nanotube field effect transistor measurements in vacuum

Iskandar Yahya, V. Stolojan, Steven Clowes, Seri Mastura Mustaza, S. R P Silva

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Three terminal measurements on a carbon nanotube field effect transistor (CNTFET) were carried out in high vacuum and the ambient, and its performance compared. The on-off current ratio, ION/IOFF, were 10 2 and 105 for devices operated in high vacuum and in ambient air, respectively. Here, we show that the conversion of p-type to ambipolar behavior may largely be attributed to the O2 in ambient doping the single walled carbon nanotubes (SWCNTs) in the active channel which consists of bundles of SWCNTs. Switching behaviour of these devices, with respect to constituent types of SWCNTs in the bundles will be discussed.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Pages224-228
Number of pages5
DOIs
Publication statusPublished - 2010
Event2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010 - Melaka
Duration: 28 Jun 201030 Jun 2010

Other

Other2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010
CityMelaka
Period28/6/1030/6/10

Fingerprint

Carbon nanotube field effect transistors
Single-walled carbon nanotubes (SWCN)
Vacuum
Doping (additives)
Air

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Yahya, I., Stolojan, V., Clowes, S., Mustaza, S. M., & Silva, S. R. P. (2010). Carbon nanotube field effect transistor measurements in vacuum. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 224-228). [5549562] https://doi.org/10.1109/SMELEC.2010.5549562

Carbon nanotube field effect transistor measurements in vacuum. / Yahya, Iskandar; Stolojan, V.; Clowes, Steven; Mustaza, Seri Mastura; Silva, S. R P.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2010. p. 224-228 5549562.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yahya, I, Stolojan, V, Clowes, S, Mustaza, SM & Silva, SRP 2010, Carbon nanotube field effect transistor measurements in vacuum. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 5549562, pp. 224-228, 2010 IEEE International Conference on Semiconductor Electronics, ICSE 2010, Melaka, 28/6/10. https://doi.org/10.1109/SMELEC.2010.5549562
Yahya I, Stolojan V, Clowes S, Mustaza SM, Silva SRP. Carbon nanotube field effect transistor measurements in vacuum. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2010. p. 224-228. 5549562 https://doi.org/10.1109/SMELEC.2010.5549562
Yahya, Iskandar ; Stolojan, V. ; Clowes, Steven ; Mustaza, Seri Mastura ; Silva, S. R P. / Carbon nanotube field effect transistor measurements in vacuum. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. 2010. pp. 224-228
@inproceedings{b4ff6a53074843b9a9dd3c40fcc23304,
title = "Carbon nanotube field effect transistor measurements in vacuum",
abstract = "Three terminal measurements on a carbon nanotube field effect transistor (CNTFET) were carried out in high vacuum and the ambient, and its performance compared. The on-off current ratio, ION/IOFF, were 10 2 and 105 for devices operated in high vacuum and in ambient air, respectively. Here, we show that the conversion of p-type to ambipolar behavior may largely be attributed to the O2 in ambient doping the single walled carbon nanotubes (SWCNTs) in the active channel which consists of bundles of SWCNTs. Switching behaviour of these devices, with respect to constituent types of SWCNTs in the bundles will be discussed.",
author = "Iskandar Yahya and V. Stolojan and Steven Clowes and Mustaza, {Seri Mastura} and Silva, {S. R P}",
year = "2010",
doi = "10.1109/SMELEC.2010.5549562",
language = "English",
isbn = "9781424466092",
pages = "224--228",
booktitle = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",

}

TY - GEN

T1 - Carbon nanotube field effect transistor measurements in vacuum

AU - Yahya, Iskandar

AU - Stolojan, V.

AU - Clowes, Steven

AU - Mustaza, Seri Mastura

AU - Silva, S. R P

PY - 2010

Y1 - 2010

N2 - Three terminal measurements on a carbon nanotube field effect transistor (CNTFET) were carried out in high vacuum and the ambient, and its performance compared. The on-off current ratio, ION/IOFF, were 10 2 and 105 for devices operated in high vacuum and in ambient air, respectively. Here, we show that the conversion of p-type to ambipolar behavior may largely be attributed to the O2 in ambient doping the single walled carbon nanotubes (SWCNTs) in the active channel which consists of bundles of SWCNTs. Switching behaviour of these devices, with respect to constituent types of SWCNTs in the bundles will be discussed.

AB - Three terminal measurements on a carbon nanotube field effect transistor (CNTFET) were carried out in high vacuum and the ambient, and its performance compared. The on-off current ratio, ION/IOFF, were 10 2 and 105 for devices operated in high vacuum and in ambient air, respectively. Here, we show that the conversion of p-type to ambipolar behavior may largely be attributed to the O2 in ambient doping the single walled carbon nanotubes (SWCNTs) in the active channel which consists of bundles of SWCNTs. Switching behaviour of these devices, with respect to constituent types of SWCNTs in the bundles will be discussed.

UR - http://www.scopus.com/inward/record.url?scp=77957571612&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77957571612&partnerID=8YFLogxK

U2 - 10.1109/SMELEC.2010.5549562

DO - 10.1109/SMELEC.2010.5549562

M3 - Conference contribution

AN - SCOPUS:77957571612

SN - 9781424466092

SP - 224

EP - 228

BT - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

ER -