### Abstract

Using the non-interacting particle model of the effective mass approximation, we determined the confined conduction and valence band states in a strained pyramidal InAs-GaAs quantum dot system. This nanostructure system contains a pyramidal InAs quantum dot of base size 6 nm × 6 nm and height of 3 nm embedded inside a GaAs substrate of 12 nm x 12 nm x 9 nm. The total atomistic strain energy of the simulation cell defined by the Keating potential was minimized and determined using the Metropolis Monte Carlo algorithm at simulation temperature of 4.2 K. The Schrodinger equation with effective mass approximation for the decoupled electron and hole confined states in this quantum dot system was numerically solved using the three-dimensional finite difference scheme. For the chosen nanostructure parameters, our calculation yielded two confined states of electrons and two confined states of heavy holes. Furthermore, the ground states of both the electron and heavy hole were strongly localized at the centre of the InAs quantum pyramid with their energy gap of 1.447 eV.

Original language | English |
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Title of host publication | Advanced Materials Research |

Pages | 411-414 |

Number of pages | 4 |

Volume | 895 |

DOIs | |

Publication status | Published - 2014 |

Event | 4th International Conference on Solid State Science and Technology, ICSSST 2012 - Melaka Duration: 18 Dec 2013 → 20 Dec 2013 |

### Publication series

Name | Advanced Materials Research |
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Volume | 895 |

ISSN (Print) | 10226680 |

### Other

Other | 4th International Conference on Solid State Science and Technology, ICSSST 2012 |
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City | Melaka |

Period | 18/12/13 → 20/12/13 |

### Fingerprint

### Keywords

- Effective mass approximation
- InAs-GaAs quantum dot system
- Keating potential
- Metropolis monte carlo
- Strain

### ASJC Scopus subject areas

- Engineering(all)

### Cite this

*Advanced Materials Research*(Vol. 895, pp. 411-414). (Advanced Materials Research; Vol. 895). https://doi.org/10.4028/www.scientific.net/AMR.895.411

**Calculation of confined electron and hole states in a strained InAs-GaAs pyramidal quantum dot system based on effective mass approximation.** / Ripan, Gregory Henry; Woon, Chin Yek; Gopir, Geri Kibe; Othman, Ahmad Puaad.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

*Advanced Materials Research.*vol. 895, Advanced Materials Research, vol. 895, pp. 411-414, 4th International Conference on Solid State Science and Technology, ICSSST 2012, Melaka, 18/12/13. https://doi.org/10.4028/www.scientific.net/AMR.895.411

}

TY - GEN

T1 - Calculation of confined electron and hole states in a strained InAs-GaAs pyramidal quantum dot system based on effective mass approximation

AU - Ripan, Gregory Henry

AU - Woon, Chin Yek

AU - Gopir, Geri Kibe

AU - Othman, Ahmad Puaad

PY - 2014

Y1 - 2014

N2 - Using the non-interacting particle model of the effective mass approximation, we determined the confined conduction and valence band states in a strained pyramidal InAs-GaAs quantum dot system. This nanostructure system contains a pyramidal InAs quantum dot of base size 6 nm × 6 nm and height of 3 nm embedded inside a GaAs substrate of 12 nm x 12 nm x 9 nm. The total atomistic strain energy of the simulation cell defined by the Keating potential was minimized and determined using the Metropolis Monte Carlo algorithm at simulation temperature of 4.2 K. The Schrodinger equation with effective mass approximation for the decoupled electron and hole confined states in this quantum dot system was numerically solved using the three-dimensional finite difference scheme. For the chosen nanostructure parameters, our calculation yielded two confined states of electrons and two confined states of heavy holes. Furthermore, the ground states of both the electron and heavy hole were strongly localized at the centre of the InAs quantum pyramid with their energy gap of 1.447 eV.

AB - Using the non-interacting particle model of the effective mass approximation, we determined the confined conduction and valence band states in a strained pyramidal InAs-GaAs quantum dot system. This nanostructure system contains a pyramidal InAs quantum dot of base size 6 nm × 6 nm and height of 3 nm embedded inside a GaAs substrate of 12 nm x 12 nm x 9 nm. The total atomistic strain energy of the simulation cell defined by the Keating potential was minimized and determined using the Metropolis Monte Carlo algorithm at simulation temperature of 4.2 K. The Schrodinger equation with effective mass approximation for the decoupled electron and hole confined states in this quantum dot system was numerically solved using the three-dimensional finite difference scheme. For the chosen nanostructure parameters, our calculation yielded two confined states of electrons and two confined states of heavy holes. Furthermore, the ground states of both the electron and heavy hole were strongly localized at the centre of the InAs quantum pyramid with their energy gap of 1.447 eV.

KW - Effective mass approximation

KW - InAs-GaAs quantum dot system

KW - Keating potential

KW - Metropolis monte carlo

KW - Strain

UR - http://www.scopus.com/inward/record.url?scp=84896883817&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84896883817&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/AMR.895.411

DO - 10.4028/www.scientific.net/AMR.895.411

M3 - Conference contribution

AN - SCOPUS:84896883817

SN - 9783038350330

VL - 895

T3 - Advanced Materials Research

SP - 411

EP - 414

BT - Advanced Materials Research

ER -