Calculation of confined electron and hole states in a strained InAs-GaAs pyramidal quantum dot system based on effective mass approximation

Gregory Henry Ripan, Chin Yek Woon, Geri Kibe Gopir, Ahmad Puaad Othman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Using the non-interacting particle model of the effective mass approximation, we determined the confined conduction and valence band states in a strained pyramidal InAs-GaAs quantum dot system. This nanostructure system contains a pyramidal InAs quantum dot of base size 6 nm × 6 nm and height of 3 nm embedded inside a GaAs substrate of 12 nm x 12 nm x 9 nm. The total atomistic strain energy of the simulation cell defined by the Keating potential was minimized and determined using the Metropolis Monte Carlo algorithm at simulation temperature of 4.2 K. The Schrodinger equation with effective mass approximation for the decoupled electron and hole confined states in this quantum dot system was numerically solved using the three-dimensional finite difference scheme. For the chosen nanostructure parameters, our calculation yielded two confined states of electrons and two confined states of heavy holes. Furthermore, the ground states of both the electron and heavy hole were strongly localized at the centre of the InAs quantum pyramid with their energy gap of 1.447 eV.

Original languageEnglish
Title of host publicationAdvanced Materials Research
Pages411-414
Number of pages4
Volume895
DOIs
Publication statusPublished - 2014
Event4th International Conference on Solid State Science and Technology, ICSSST 2012 - Melaka
Duration: 18 Dec 201320 Dec 2013

Publication series

NameAdvanced Materials Research
Volume895
ISSN (Print)10226680

Other

Other4th International Conference on Solid State Science and Technology, ICSSST 2012
CityMelaka
Period18/12/1320/12/13

Fingerprint

Semiconductor quantum dots
Electrons
Nanostructures
Schrodinger equation
Valence bands
Strain energy
Conduction bands
Ground state
Energy gap
Substrates
Temperature

Keywords

  • Effective mass approximation
  • InAs-GaAs quantum dot system
  • Keating potential
  • Metropolis monte carlo
  • Strain

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ripan, G. H., Woon, C. Y., Gopir, G. K., & Othman, A. P. (2014). Calculation of confined electron and hole states in a strained InAs-GaAs pyramidal quantum dot system based on effective mass approximation. In Advanced Materials Research (Vol. 895, pp. 411-414). (Advanced Materials Research; Vol. 895). https://doi.org/10.4028/www.scientific.net/AMR.895.411

Calculation of confined electron and hole states in a strained InAs-GaAs pyramidal quantum dot system based on effective mass approximation. / Ripan, Gregory Henry; Woon, Chin Yek; Gopir, Geri Kibe; Othman, Ahmad Puaad.

Advanced Materials Research. Vol. 895 2014. p. 411-414 (Advanced Materials Research; Vol. 895).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ripan, GH, Woon, CY, Gopir, GK & Othman, AP 2014, Calculation of confined electron and hole states in a strained InAs-GaAs pyramidal quantum dot system based on effective mass approximation. in Advanced Materials Research. vol. 895, Advanced Materials Research, vol. 895, pp. 411-414, 4th International Conference on Solid State Science and Technology, ICSSST 2012, Melaka, 18/12/13. https://doi.org/10.4028/www.scientific.net/AMR.895.411
Ripan GH, Woon CY, Gopir GK, Othman AP. Calculation of confined electron and hole states in a strained InAs-GaAs pyramidal quantum dot system based on effective mass approximation. In Advanced Materials Research. Vol. 895. 2014. p. 411-414. (Advanced Materials Research). https://doi.org/10.4028/www.scientific.net/AMR.895.411
Ripan, Gregory Henry ; Woon, Chin Yek ; Gopir, Geri Kibe ; Othman, Ahmad Puaad. / Calculation of confined electron and hole states in a strained InAs-GaAs pyramidal quantum dot system based on effective mass approximation. Advanced Materials Research. Vol. 895 2014. pp. 411-414 (Advanced Materials Research).
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