Butane sensing property of Si-ZnO nanowires p-n junction

T. Y. Tiong, Chang Fu Dee, Muhamad Mat Salleh, Burhanuddin Yeop Majlis, Muhammad Yahaya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The p-n junction has been formed by using p-type boron doped silicon and n-type ZnO nanowires (NWs). It was prepared by using simple vapour-transport deposition method. Gas sensing property has been examined by measuring the resistance change of the junction sample towards 1 % of butane gas at room temperature. Significant improvement of sensing behaviour was observed from the fabricated junction sample when it was compared to sample of non-p-n junction ZnO NWs. The increase in the sensitivity of the p-n junction ZnO NWs and the ability to regain the sensing power by returning back to the initial state at room temperature are useful for future sensing device with minimum power consumption.

Original languageEnglish
Title of host publicationAdvanced Materials Research
Pages260-265
Number of pages6
Volume364
DOIs
Publication statusPublished - 2012
Event2011 International Conference on Nanomaterials, Synthesis and Characterization, ICNSC2011 - Selangor
Duration: 4 Jul 20115 Jul 2011

Publication series

NameAdvanced Materials Research
Volume364
ISSN (Print)10226680

Other

Other2011 International Conference on Nanomaterials, Synthesis and Characterization, ICNSC2011
CitySelangor
Period4/7/115/7/11

Fingerprint

Butane
Nanowires
Regain
Gases
Boron
Electric power utilization
Vapors
Silicon
Temperature

Keywords

  • Room temperature sensing and butane gas
  • Si-ZnO nanowires p-n junction
  • ZnO nanowires

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Tiong, T. Y., Dee, C. F., Mat Salleh, M., Yeop Majlis, B., & Yahaya, M. (2012). Butane sensing property of Si-ZnO nanowires p-n junction. In Advanced Materials Research (Vol. 364, pp. 260-265). (Advanced Materials Research; Vol. 364). https://doi.org/10.4028/www.scientific.net/AMR.364.260

Butane sensing property of Si-ZnO nanowires p-n junction. / Tiong, T. Y.; Dee, Chang Fu; Mat Salleh, Muhamad; Yeop Majlis, Burhanuddin; Yahaya, Muhammad.

Advanced Materials Research. Vol. 364 2012. p. 260-265 (Advanced Materials Research; Vol. 364).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tiong, TY, Dee, CF, Mat Salleh, M, Yeop Majlis, B & Yahaya, M 2012, Butane sensing property of Si-ZnO nanowires p-n junction. in Advanced Materials Research. vol. 364, Advanced Materials Research, vol. 364, pp. 260-265, 2011 International Conference on Nanomaterials, Synthesis and Characterization, ICNSC2011, Selangor, 4/7/11. https://doi.org/10.4028/www.scientific.net/AMR.364.260
Tiong TY, Dee CF, Mat Salleh M, Yeop Majlis B, Yahaya M. Butane sensing property of Si-ZnO nanowires p-n junction. In Advanced Materials Research. Vol. 364. 2012. p. 260-265. (Advanced Materials Research). https://doi.org/10.4028/www.scientific.net/AMR.364.260
Tiong, T. Y. ; Dee, Chang Fu ; Mat Salleh, Muhamad ; Yeop Majlis, Burhanuddin ; Yahaya, Muhammad. / Butane sensing property of Si-ZnO nanowires p-n junction. Advanced Materials Research. Vol. 364 2012. pp. 260-265 (Advanced Materials Research).
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