Boron doped ZnO films for dye-sensitized solar cell (DSSC): effect of annealing temperature

L. Roza, Mohd Yusri Abd Rahman, Ali Umar Akrajas, Muhamad Mat Salleh

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The paper reports the influence of annealing temperature on the properties of B-doped ZnO films. These films properties were then correlated to the performance parameters of dye-sensitized solar cell (DSSC) utilizing those films. The B-doped ZnO samples were grown on FTO glass substrate via seed mediated hydrothermal method and then annealed at various temperatures, namely, 150, 250, 350 and 450 °C. It was found the morphological shape of the sample is the mixture of nanotube and nanorod. The diameter of the nanotube decreases with annealing temperature. However, the length of the nanotube decreases with the temperature. The weight and atomic percentage of boron also decrease with the temperature. All samples exhibit wurtzite phase structure. The sample annealed at 250 °C shows the highest optical absorption in visible region and the lowest photoluminescence in infrared region. The DSSC utilizing the sample annealed at 250 °C demonstrates the highest photovoltaic parameters with the JSC of 2.2 mA cm−2, VOC of 0.46 V and η of 0.29 % since it shows the highest absorption in visible region, lowest photoluminescence in infra-red region and lowest Rct.

Original languageEnglish
Pages (from-to)8394-8401
Number of pages8
JournalJournal of Materials Science: Materials in Electronics
Volume27
Issue number8
DOIs
Publication statusPublished - 1 Aug 2016

Fingerprint

Boron
boron
solar cells
dyes
Annealing
annealing
Nanotubes
nanotubes
Photoluminescence
Temperature
temperature
Infrared radiation
photoluminescence
volatile organic compounds
Phase structure
Nanorods
Volatile organic compounds
wurtzite
Light absorption
nanorods

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Boron doped ZnO films for dye-sensitized solar cell (DSSC) : effect of annealing temperature. / Roza, L.; Abd Rahman, Mohd Yusri; Akrajas, Ali Umar; Mat Salleh, Muhamad.

In: Journal of Materials Science: Materials in Electronics, Vol. 27, No. 8, 01.08.2016, p. 8394-8401.

Research output: Contribution to journalArticle

@article{4cbdf9ac3e45402295bdbf0f6a5ea1a4,
title = "Boron doped ZnO films for dye-sensitized solar cell (DSSC): effect of annealing temperature",
abstract = "The paper reports the influence of annealing temperature on the properties of B-doped ZnO films. These films properties were then correlated to the performance parameters of dye-sensitized solar cell (DSSC) utilizing those films. The B-doped ZnO samples were grown on FTO glass substrate via seed mediated hydrothermal method and then annealed at various temperatures, namely, 150, 250, 350 and 450 °C. It was found the morphological shape of the sample is the mixture of nanotube and nanorod. The diameter of the nanotube decreases with annealing temperature. However, the length of the nanotube decreases with the temperature. The weight and atomic percentage of boron also decrease with the temperature. All samples exhibit wurtzite phase structure. The sample annealed at 250 °C shows the highest optical absorption in visible region and the lowest photoluminescence in infrared region. The DSSC utilizing the sample annealed at 250 °C demonstrates the highest photovoltaic parameters with the JSC of 2.2 mA cm−2, VOC of 0.46 V and η of 0.29 {\%} since it shows the highest absorption in visible region, lowest photoluminescence in infra-red region and lowest Rct.",
author = "L. Roza and {Abd Rahman}, {Mohd Yusri} and Akrajas, {Ali Umar} and {Mat Salleh}, Muhamad",
year = "2016",
month = "8",
day = "1",
doi = "10.1007/s10854-016-4851-4",
language = "English",
volume = "27",
pages = "8394--8401",
journal = "Journal of Materials Science: Materials in Electronics",
issn = "0957-4522",
publisher = "Springer New York",
number = "8",

}

TY - JOUR

T1 - Boron doped ZnO films for dye-sensitized solar cell (DSSC)

T2 - effect of annealing temperature

AU - Roza, L.

AU - Abd Rahman, Mohd Yusri

AU - Akrajas, Ali Umar

AU - Mat Salleh, Muhamad

PY - 2016/8/1

Y1 - 2016/8/1

N2 - The paper reports the influence of annealing temperature on the properties of B-doped ZnO films. These films properties were then correlated to the performance parameters of dye-sensitized solar cell (DSSC) utilizing those films. The B-doped ZnO samples were grown on FTO glass substrate via seed mediated hydrothermal method and then annealed at various temperatures, namely, 150, 250, 350 and 450 °C. It was found the morphological shape of the sample is the mixture of nanotube and nanorod. The diameter of the nanotube decreases with annealing temperature. However, the length of the nanotube decreases with the temperature. The weight and atomic percentage of boron also decrease with the temperature. All samples exhibit wurtzite phase structure. The sample annealed at 250 °C shows the highest optical absorption in visible region and the lowest photoluminescence in infrared region. The DSSC utilizing the sample annealed at 250 °C demonstrates the highest photovoltaic parameters with the JSC of 2.2 mA cm−2, VOC of 0.46 V and η of 0.29 % since it shows the highest absorption in visible region, lowest photoluminescence in infra-red region and lowest Rct.

AB - The paper reports the influence of annealing temperature on the properties of B-doped ZnO films. These films properties were then correlated to the performance parameters of dye-sensitized solar cell (DSSC) utilizing those films. The B-doped ZnO samples were grown on FTO glass substrate via seed mediated hydrothermal method and then annealed at various temperatures, namely, 150, 250, 350 and 450 °C. It was found the morphological shape of the sample is the mixture of nanotube and nanorod. The diameter of the nanotube decreases with annealing temperature. However, the length of the nanotube decreases with the temperature. The weight and atomic percentage of boron also decrease with the temperature. All samples exhibit wurtzite phase structure. The sample annealed at 250 °C shows the highest optical absorption in visible region and the lowest photoluminescence in infrared region. The DSSC utilizing the sample annealed at 250 °C demonstrates the highest photovoltaic parameters with the JSC of 2.2 mA cm−2, VOC of 0.46 V and η of 0.29 % since it shows the highest absorption in visible region, lowest photoluminescence in infra-red region and lowest Rct.

UR - http://www.scopus.com/inward/record.url?scp=84978529148&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84978529148&partnerID=8YFLogxK

U2 - 10.1007/s10854-016-4851-4

DO - 10.1007/s10854-016-4851-4

M3 - Article

AN - SCOPUS:84978529148

VL - 27

SP - 8394

EP - 8401

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

SN - 0957-4522

IS - 8

ER -