Bond pad cratering study by reliability tests

C. W. Tan, A. R. Daud

    Research output: Contribution to journalArticle

    25 Citations (Scopus)

    Abstract

    Silicon cratering is one of the major obstacles to turn thermosonic copper wire bonding technology into a mass-production mode. The effects of reliability tests, i.e. aging test, temperature cycle test, and autoclave test on silicon craters of copper and gold wire-bonded Si substrate are discussed in this paper. Prior to reliability tests, wire-bonded specimens were examined by initial bond etch test. Results showed that there was no crack or silicon cratering observed in the selected samples. It was found that reliability tests, unlike improper bonding parameters, did not induce silicon craters at the Si substrate. However, reliability tests degraded the Si substrate and bonded interfaces, which were exposed later during destructive tests, i.e. wire pull test and ball shear test.

    Original languageEnglish
    Pages (from-to)309-314
    Number of pages6
    JournalJournal of Materials Science: Materials in Electronics
    Volume13
    Issue number5
    DOIs
    Publication statusPublished - May 2002

    Fingerprint

    cratering
    Silicon
    Wire
    Copper
    Substrates
    wire
    Autoclaves
    Gold
    silicon
    craters
    Aging of materials
    Cracks
    destructive tests
    copper
    autoclaves
    balls
    Temperature
    cracks
    gold
    shear

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Materials Science(all)
    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Cite this

    Bond pad cratering study by reliability tests. / Tan, C. W.; Daud, A. R.

    In: Journal of Materials Science: Materials in Electronics, Vol. 13, No. 5, 05.2002, p. 309-314.

    Research output: Contribution to journalArticle

    Tan, C. W. ; Daud, A. R. / Bond pad cratering study by reliability tests. In: Journal of Materials Science: Materials in Electronics. 2002 ; Vol. 13, No. 5. pp. 309-314.
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