Bismuth titanate thin film for pressure sensor prepared by sol gel method

Chong Cheong Wei, Muhammad Yahaya, Muhamad Mat Salleh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Bismuth titanate, Bi4Ti3O12 thin film pressure sensor was fabricated by sol gel method. The B14Ti 3O12 thin film was synthesized on substrate Si / SiO 2 / RuO2 at low temperature to avoid short-circuit problem. The film was obtained by depositing multiple Bi-Ti-O spin coat layers on substrate, followed by heating of each layer at 300°C in air for 15 mins. Ag film was then deposited as top electrode. The piezoelectric response of the sensor was tested by pneumatic loading method. It was found that the sensor was sensitive to the applied pressure and the response recovered back when the pressure was removed from the chamber. This study showed that the piezoelectric Bi4Ti3O12 thin film prepared by sol gel method potentially be used as a stable pressure sensor.

Original languageEnglish
Title of host publicationProceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics
Pages597-600
Number of pages4
Publication statusPublished - 2004
Event2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004 - Kuala Lumpur
Duration: 4 Dec 20049 Dec 2004

Other

Other2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004
CityKuala Lumpur
Period4/12/049/12/04

Fingerprint

Pressure sensors
Bismuth
Sol-gel process
Thin films
Sensors
Substrates
Short circuit currents
Pneumatics
Heating
Electrodes
Air
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Wei, C. C., Yahaya, M., & Mat Salleh, M. (2004). Bismuth titanate thin film for pressure sensor prepared by sol gel method. In Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics (pp. 597-600). [1620957]

Bismuth titanate thin film for pressure sensor prepared by sol gel method. / Wei, Chong Cheong; Yahaya, Muhammad; Mat Salleh, Muhamad.

Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics. 2004. p. 597-600 1620957.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wei, CC, Yahaya, M & Mat Salleh, M 2004, Bismuth titanate thin film for pressure sensor prepared by sol gel method. in Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics., 1620957, pp. 597-600, 2004 IEEE International Conference on Semiconductor Electronics, ICSE 2004, Kuala Lumpur, 4/12/04.
Wei CC, Yahaya M, Mat Salleh M. Bismuth titanate thin film for pressure sensor prepared by sol gel method. In Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics. 2004. p. 597-600. 1620957
Wei, Chong Cheong ; Yahaya, Muhammad ; Mat Salleh, Muhamad. / Bismuth titanate thin film for pressure sensor prepared by sol gel method. Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics. 2004. pp. 597-600
@inproceedings{e169532bac624ab8b71c63d284930c7b,
title = "Bismuth titanate thin film for pressure sensor prepared by sol gel method",
abstract = "Bismuth titanate, Bi4Ti3O12 thin film pressure sensor was fabricated by sol gel method. The B14Ti 3O12 thin film was synthesized on substrate Si / SiO 2 / RuO2 at low temperature to avoid short-circuit problem. The film was obtained by depositing multiple Bi-Ti-O spin coat layers on substrate, followed by heating of each layer at 300°C in air for 15 mins. Ag film was then deposited as top electrode. The piezoelectric response of the sensor was tested by pneumatic loading method. It was found that the sensor was sensitive to the applied pressure and the response recovered back when the pressure was removed from the chamber. This study showed that the piezoelectric Bi4Ti3O12 thin film prepared by sol gel method potentially be used as a stable pressure sensor.",
author = "Wei, {Chong Cheong} and Muhammad Yahaya and {Mat Salleh}, Muhamad",
year = "2004",
language = "English",
isbn = "0780386582",
pages = "597--600",
booktitle = "Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics",

}

TY - GEN

T1 - Bismuth titanate thin film for pressure sensor prepared by sol gel method

AU - Wei, Chong Cheong

AU - Yahaya, Muhammad

AU - Mat Salleh, Muhamad

PY - 2004

Y1 - 2004

N2 - Bismuth titanate, Bi4Ti3O12 thin film pressure sensor was fabricated by sol gel method. The B14Ti 3O12 thin film was synthesized on substrate Si / SiO 2 / RuO2 at low temperature to avoid short-circuit problem. The film was obtained by depositing multiple Bi-Ti-O spin coat layers on substrate, followed by heating of each layer at 300°C in air for 15 mins. Ag film was then deposited as top electrode. The piezoelectric response of the sensor was tested by pneumatic loading method. It was found that the sensor was sensitive to the applied pressure and the response recovered back when the pressure was removed from the chamber. This study showed that the piezoelectric Bi4Ti3O12 thin film prepared by sol gel method potentially be used as a stable pressure sensor.

AB - Bismuth titanate, Bi4Ti3O12 thin film pressure sensor was fabricated by sol gel method. The B14Ti 3O12 thin film was synthesized on substrate Si / SiO 2 / RuO2 at low temperature to avoid short-circuit problem. The film was obtained by depositing multiple Bi-Ti-O spin coat layers on substrate, followed by heating of each layer at 300°C in air for 15 mins. Ag film was then deposited as top electrode. The piezoelectric response of the sensor was tested by pneumatic loading method. It was found that the sensor was sensitive to the applied pressure and the response recovered back when the pressure was removed from the chamber. This study showed that the piezoelectric Bi4Ti3O12 thin film prepared by sol gel method potentially be used as a stable pressure sensor.

UR - http://www.scopus.com/inward/record.url?scp=51349140431&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=51349140431&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:51349140431

SN - 0780386582

SN - 9780780386587

SP - 597

EP - 600

BT - Proceedings ICSE 2004 - 2004 IEEE International Conference on Semiconductor Electronics

ER -