Bismuth concentration inhomogeneity in GaAsBi bulk and quantum well structures

Abdul Rahman Mohmad, F. Bastiman, C. J. Hunter, F. Harun, D. F. Reyes, D. L. Sales, D. Gonzalez, R. D. Richards, J. P R David, Burhanuddin Yeop Majlis

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The optical and structural properties of GaAsBi bulk and quantum well (QW) samples grown under various conditions were studied by photoluminescence (PL), high resolution x-ray diffraction (HR-XRD) and transmission electron microscopy (TEM). At 10 K, the 90 nm bulk sample shows two PL peaks at 1.18 and 1.3 eV. The temperature and power dependent PL data suggest that both PL peaks originate from the GaAsBi layer which consists of two regions with different Bi concentrations. The TEM images verify that the Bi concentration decreases monotonically across the layer, showing a high Bi concentration (∼0.053) close to the bottom interface which then reduces to ∼0.02 for thicknesses >25 nm. Besides, the high Bi content region cannot be detected by HR-XRD due to a broad and weak diffraction intensity. For multiple QW samples, a similar Bi profile was also observed in which the first well has a significantly higher Bi content compared to the other wells. The energy separation between the PL peaks is 0.12 eV and is consistent with the energy difference observed for the bulk sample. However, two PL peaks were not observed in the other GaAsBi bulk sample which was grown under different conditions, showing the importance of growth optimizations.

Original languageEnglish
Article number094018
JournalSemiconductor Science and Technology
Volume30
Issue number9
DOIs
Publication statusPublished - 1 Sep 2015

Fingerprint

Bismuth
bismuth
Semiconductor quantum wells
Photoluminescence
inhomogeneity
quantum wells
photoluminescence
Diffraction
x ray diffraction
Transmission electron microscopy
X rays
transmission electron microscopy
high resolution
Structural properties
Optical properties
optical properties
optimization
energy
profiles
diffraction

Keywords

  • bismuth inhomogeneity
  • GaAsBi alloy
  • photoluminescence

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Bismuth concentration inhomogeneity in GaAsBi bulk and quantum well structures. / Mohmad, Abdul Rahman; Bastiman, F.; Hunter, C. J.; Harun, F.; Reyes, D. F.; Sales, D. L.; Gonzalez, D.; Richards, R. D.; David, J. P R; Yeop Majlis, Burhanuddin.

In: Semiconductor Science and Technology, Vol. 30, No. 9, 094018, 01.09.2015.

Research output: Contribution to journalArticle

Mohmad, AR, Bastiman, F, Hunter, CJ, Harun, F, Reyes, DF, Sales, DL, Gonzalez, D, Richards, RD, David, JPR & Yeop Majlis, B 2015, 'Bismuth concentration inhomogeneity in GaAsBi bulk and quantum well structures', Semiconductor Science and Technology, vol. 30, no. 9, 094018. https://doi.org/10.1088/0268-1242/30/9/094018
Mohmad, Abdul Rahman ; Bastiman, F. ; Hunter, C. J. ; Harun, F. ; Reyes, D. F. ; Sales, D. L. ; Gonzalez, D. ; Richards, R. D. ; David, J. P R ; Yeop Majlis, Burhanuddin. / Bismuth concentration inhomogeneity in GaAsBi bulk and quantum well structures. In: Semiconductor Science and Technology. 2015 ; Vol. 30, No. 9.
@article{5adb734f8dfb4a8aa3463c0f564f75c0,
title = "Bismuth concentration inhomogeneity in GaAsBi bulk and quantum well structures",
abstract = "The optical and structural properties of GaAsBi bulk and quantum well (QW) samples grown under various conditions were studied by photoluminescence (PL), high resolution x-ray diffraction (HR-XRD) and transmission electron microscopy (TEM). At 10 K, the 90 nm bulk sample shows two PL peaks at 1.18 and 1.3 eV. The temperature and power dependent PL data suggest that both PL peaks originate from the GaAsBi layer which consists of two regions with different Bi concentrations. The TEM images verify that the Bi concentration decreases monotonically across the layer, showing a high Bi concentration (∼0.053) close to the bottom interface which then reduces to ∼0.02 for thicknesses >25 nm. Besides, the high Bi content region cannot be detected by HR-XRD due to a broad and weak diffraction intensity. For multiple QW samples, a similar Bi profile was also observed in which the first well has a significantly higher Bi content compared to the other wells. The energy separation between the PL peaks is 0.12 eV and is consistent with the energy difference observed for the bulk sample. However, two PL peaks were not observed in the other GaAsBi bulk sample which was grown under different conditions, showing the importance of growth optimizations.",
keywords = "bismuth inhomogeneity, GaAsBi alloy, photoluminescence",
author = "Mohmad, {Abdul Rahman} and F. Bastiman and Hunter, {C. J.} and F. Harun and Reyes, {D. F.} and Sales, {D. L.} and D. Gonzalez and Richards, {R. D.} and David, {J. P R} and {Yeop Majlis}, Burhanuddin",
year = "2015",
month = "9",
day = "1",
doi = "10.1088/0268-1242/30/9/094018",
language = "English",
volume = "30",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "9",

}

TY - JOUR

T1 - Bismuth concentration inhomogeneity in GaAsBi bulk and quantum well structures

AU - Mohmad, Abdul Rahman

AU - Bastiman, F.

AU - Hunter, C. J.

AU - Harun, F.

AU - Reyes, D. F.

AU - Sales, D. L.

AU - Gonzalez, D.

AU - Richards, R. D.

AU - David, J. P R

AU - Yeop Majlis, Burhanuddin

PY - 2015/9/1

Y1 - 2015/9/1

N2 - The optical and structural properties of GaAsBi bulk and quantum well (QW) samples grown under various conditions were studied by photoluminescence (PL), high resolution x-ray diffraction (HR-XRD) and transmission electron microscopy (TEM). At 10 K, the 90 nm bulk sample shows two PL peaks at 1.18 and 1.3 eV. The temperature and power dependent PL data suggest that both PL peaks originate from the GaAsBi layer which consists of two regions with different Bi concentrations. The TEM images verify that the Bi concentration decreases monotonically across the layer, showing a high Bi concentration (∼0.053) close to the bottom interface which then reduces to ∼0.02 for thicknesses >25 nm. Besides, the high Bi content region cannot be detected by HR-XRD due to a broad and weak diffraction intensity. For multiple QW samples, a similar Bi profile was also observed in which the first well has a significantly higher Bi content compared to the other wells. The energy separation between the PL peaks is 0.12 eV and is consistent with the energy difference observed for the bulk sample. However, two PL peaks were not observed in the other GaAsBi bulk sample which was grown under different conditions, showing the importance of growth optimizations.

AB - The optical and structural properties of GaAsBi bulk and quantum well (QW) samples grown under various conditions were studied by photoluminescence (PL), high resolution x-ray diffraction (HR-XRD) and transmission electron microscopy (TEM). At 10 K, the 90 nm bulk sample shows two PL peaks at 1.18 and 1.3 eV. The temperature and power dependent PL data suggest that both PL peaks originate from the GaAsBi layer which consists of two regions with different Bi concentrations. The TEM images verify that the Bi concentration decreases monotonically across the layer, showing a high Bi concentration (∼0.053) close to the bottom interface which then reduces to ∼0.02 for thicknesses >25 nm. Besides, the high Bi content region cannot be detected by HR-XRD due to a broad and weak diffraction intensity. For multiple QW samples, a similar Bi profile was also observed in which the first well has a significantly higher Bi content compared to the other wells. The energy separation between the PL peaks is 0.12 eV and is consistent with the energy difference observed for the bulk sample. However, two PL peaks were not observed in the other GaAsBi bulk sample which was grown under different conditions, showing the importance of growth optimizations.

KW - bismuth inhomogeneity

KW - GaAsBi alloy

KW - photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=84936123666&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84936123666&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/30/9/094018

DO - 10.1088/0268-1242/30/9/094018

M3 - Article

AN - SCOPUS:84936123666

VL - 30

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 9

M1 - 094018

ER -