Abstract
Polycrystalline Bi-Ti-O thin films were prepared by multilayer deposition method using electron beam evaporation. The thin films were obtained by sequentially evaporating Bi 2O 3 / TiO 2 layers on Si / SiO 2 substrate followed by a heat treatment for 2 hours in air at 900 °C. The piezoelectric response of the sample was measured by pneumatic loading method. A pressure sensor was fabricated by annealed the deposited multilayer thin films on Si / SiO 2 /Au substrate and Al was then deposited as top electrode. When an air pressure was applied and imparted on the sensor, electrical voltage was generated and measured using an electrometer. The sensor's response was measured at three response cycles. It was found that the sensor has good voltage sensitivity and repeatability. The study shows the possibility to obtain Bi-Ti-O thin film pressure sensor by electron beam multilayer deposition.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Editors | J.-C. Chiao, A.J. Hariz, D.N. Jamieson, G. Parish, V.K. Varadan |
| Pages | 324-331 |
| Number of pages | 8 |
| Volume | 5276 |
| DOIs | |
| Publication status | Published - 2004 |
| Event | Device and Process Technologies for MEMS, Microelectronics, and Photonics III - Perth, WA, Australia Duration: 10 Dec 2003 → 12 Dec 2003 |
Other
| Other | Device and Process Technologies for MEMS, Microelectronics, and Photonics III |
|---|---|
| Country | Australia |
| City | Perth, WA |
| Period | 10/12/03 → 12/12/03 |
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Keywords
- Bi-Ti-O thin films
- Electron beam evaporation
- Multilayer deposition
- Piezoelectric
- Pressure sensor
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics
Cite this
Bi-Ti-O thin films for piezoelectric pressure sensors. / Wei, Chong Cheong; Yahaya, Muhammad; Mat Salleh, Muhamad.
Proceedings of SPIE - The International Society for Optical Engineering. ed. / J.-C. Chiao; A.J. Hariz; D.N. Jamieson; G. Parish; V.K. Varadan. Vol. 5276 2004. p. 324-331.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Bi-Ti-O thin films for piezoelectric pressure sensors
AU - Wei, Chong Cheong
AU - Yahaya, Muhammad
AU - Mat Salleh, Muhamad
PY - 2004
Y1 - 2004
N2 - Polycrystalline Bi-Ti-O thin films were prepared by multilayer deposition method using electron beam evaporation. The thin films were obtained by sequentially evaporating Bi 2O 3 / TiO 2 layers on Si / SiO 2 substrate followed by a heat treatment for 2 hours in air at 900 °C. The piezoelectric response of the sample was measured by pneumatic loading method. A pressure sensor was fabricated by annealed the deposited multilayer thin films on Si / SiO 2 /Au substrate and Al was then deposited as top electrode. When an air pressure was applied and imparted on the sensor, electrical voltage was generated and measured using an electrometer. The sensor's response was measured at three response cycles. It was found that the sensor has good voltage sensitivity and repeatability. The study shows the possibility to obtain Bi-Ti-O thin film pressure sensor by electron beam multilayer deposition.
AB - Polycrystalline Bi-Ti-O thin films were prepared by multilayer deposition method using electron beam evaporation. The thin films were obtained by sequentially evaporating Bi 2O 3 / TiO 2 layers on Si / SiO 2 substrate followed by a heat treatment for 2 hours in air at 900 °C. The piezoelectric response of the sample was measured by pneumatic loading method. A pressure sensor was fabricated by annealed the deposited multilayer thin films on Si / SiO 2 /Au substrate and Al was then deposited as top electrode. When an air pressure was applied and imparted on the sensor, electrical voltage was generated and measured using an electrometer. The sensor's response was measured at three response cycles. It was found that the sensor has good voltage sensitivity and repeatability. The study shows the possibility to obtain Bi-Ti-O thin film pressure sensor by electron beam multilayer deposition.
KW - Bi-Ti-O thin films
KW - Electron beam evaporation
KW - Multilayer deposition
KW - Piezoelectric
KW - Pressure sensor
UR - http://www.scopus.com/inward/record.url?scp=2442488683&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=2442488683&partnerID=8YFLogxK
U2 - 10.1117/12.522281
DO - 10.1117/12.522281
M3 - Conference contribution
AN - SCOPUS:2442488683
VL - 5276
SP - 324
EP - 331
BT - Proceedings of SPIE - The International Society for Optical Engineering
A2 - Chiao, J.-C.
A2 - Hariz, A.J.
A2 - Jamieson, D.N.
A2 - Parish, G.
A2 - Varadan, V.K.
ER -