Bandgap optimization of absorber layers in amorphous silicon single and multijunction junction solar cells

M. I. Kabir, Zahari Ibarahim, M. Alghoul, Kamaruzzaman Sopian, Md Rezaul Karim, Nowshad Amin

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Single and multijunction amorphous silicon thin film solar cells have been investigated here by the Analysis of Microelectronic and Photonic Structures (AMPS 1D) simulator in regard to overall performance. The photovoltaic characteristics have been observed by changing the bandgap of the absorber layers, variation of light intensity and the effect of operating temperature for single and multijunction devices. The absorber layer a-SiO:H in single junction cell has shown better efficiency trend within the bandgap range of 1.8-2.2 eV and the highest efficiency of 17.67% is achieved at 2 eV. Moreover, efficiency of 17.95% has been found at 10 suns. The second absorber layer a-SiC:H in double junction cell shows the highest efficiency of 19.04% at 1.9 eV. In contrast, the maximum efficiency of 20.42% has been found for the bandgap of 1.8 eV in a-Si:H as absorber layer of the bottom cell in triple junction configuration. For double and triple junctions, the efficiency increased to 21.94% and 25.58% at 30 and 100 suns, respectively. The temperature gradients for single, double and triple junction are found to be -0.17%/ 0C, -0.20%/ 0C and - 0.28%/ 0C, respectively.

Original languageEnglish
Pages (from-to)51-59
Number of pages9
JournalChalcogenide Letters
Volume9
Issue number1
Publication statusPublished - Jan 2012

Fingerprint

Amorphous silicon
amorphous silicon
absorbers
Solar cells
Energy gap
solar cells
optimization
AMPS (satellite payload)
cells
Silicon solar cells
operating temperature
microelectronics
Microelectronics
Thermal gradients
Photonics
luminous intensity
simulators
temperature gradients
Simulators
photonics

Keywords

  • Absorber layer
  • Bandgap
  • Light intensity and AMPS-1D
  • Multijunction
  • Operating temperature
  • Single junction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Physics and Astronomy(all)

Cite this

Bandgap optimization of absorber layers in amorphous silicon single and multijunction junction solar cells. / Kabir, M. I.; Ibarahim, Zahari; Alghoul, M.; Sopian, Kamaruzzaman; Karim, Md Rezaul; Amin, Nowshad.

In: Chalcogenide Letters, Vol. 9, No. 1, 01.2012, p. 51-59.

Research output: Contribution to journalArticle

@article{71f5cab901764834994b5ce032493ec5,
title = "Bandgap optimization of absorber layers in amorphous silicon single and multijunction junction solar cells",
abstract = "Single and multijunction amorphous silicon thin film solar cells have been investigated here by the Analysis of Microelectronic and Photonic Structures (AMPS 1D) simulator in regard to overall performance. The photovoltaic characteristics have been observed by changing the bandgap of the absorber layers, variation of light intensity and the effect of operating temperature for single and multijunction devices. The absorber layer a-SiO:H in single junction cell has shown better efficiency trend within the bandgap range of 1.8-2.2 eV and the highest efficiency of 17.67{\%} is achieved at 2 eV. Moreover, efficiency of 17.95{\%} has been found at 10 suns. The second absorber layer a-SiC:H in double junction cell shows the highest efficiency of 19.04{\%} at 1.9 eV. In contrast, the maximum efficiency of 20.42{\%} has been found for the bandgap of 1.8 eV in a-Si:H as absorber layer of the bottom cell in triple junction configuration. For double and triple junctions, the efficiency increased to 21.94{\%} and 25.58{\%} at 30 and 100 suns, respectively. The temperature gradients for single, double and triple junction are found to be -0.17{\%}/ 0C, -0.20{\%}/ 0C and - 0.28{\%}/ 0C, respectively.",
keywords = "Absorber layer, Bandgap, Light intensity and AMPS-1D, Multijunction, Operating temperature, Single junction",
author = "Kabir, {M. I.} and Zahari Ibarahim and M. Alghoul and Kamaruzzaman Sopian and Karim, {Md Rezaul} and Nowshad Amin",
year = "2012",
month = "1",
language = "English",
volume = "9",
pages = "51--59",
journal = "Chalcogenide Letters",
issn = "1584-8663",
publisher = "National Institute R and D of Materials Physics",
number = "1",

}

TY - JOUR

T1 - Bandgap optimization of absorber layers in amorphous silicon single and multijunction junction solar cells

AU - Kabir, M. I.

AU - Ibarahim, Zahari

AU - Alghoul, M.

AU - Sopian, Kamaruzzaman

AU - Karim, Md Rezaul

AU - Amin, Nowshad

PY - 2012/1

Y1 - 2012/1

N2 - Single and multijunction amorphous silicon thin film solar cells have been investigated here by the Analysis of Microelectronic and Photonic Structures (AMPS 1D) simulator in regard to overall performance. The photovoltaic characteristics have been observed by changing the bandgap of the absorber layers, variation of light intensity and the effect of operating temperature for single and multijunction devices. The absorber layer a-SiO:H in single junction cell has shown better efficiency trend within the bandgap range of 1.8-2.2 eV and the highest efficiency of 17.67% is achieved at 2 eV. Moreover, efficiency of 17.95% has been found at 10 suns. The second absorber layer a-SiC:H in double junction cell shows the highest efficiency of 19.04% at 1.9 eV. In contrast, the maximum efficiency of 20.42% has been found for the bandgap of 1.8 eV in a-Si:H as absorber layer of the bottom cell in triple junction configuration. For double and triple junctions, the efficiency increased to 21.94% and 25.58% at 30 and 100 suns, respectively. The temperature gradients for single, double and triple junction are found to be -0.17%/ 0C, -0.20%/ 0C and - 0.28%/ 0C, respectively.

AB - Single and multijunction amorphous silicon thin film solar cells have been investigated here by the Analysis of Microelectronic and Photonic Structures (AMPS 1D) simulator in regard to overall performance. The photovoltaic characteristics have been observed by changing the bandgap of the absorber layers, variation of light intensity and the effect of operating temperature for single and multijunction devices. The absorber layer a-SiO:H in single junction cell has shown better efficiency trend within the bandgap range of 1.8-2.2 eV and the highest efficiency of 17.67% is achieved at 2 eV. Moreover, efficiency of 17.95% has been found at 10 suns. The second absorber layer a-SiC:H in double junction cell shows the highest efficiency of 19.04% at 1.9 eV. In contrast, the maximum efficiency of 20.42% has been found for the bandgap of 1.8 eV in a-Si:H as absorber layer of the bottom cell in triple junction configuration. For double and triple junctions, the efficiency increased to 21.94% and 25.58% at 30 and 100 suns, respectively. The temperature gradients for single, double and triple junction are found to be -0.17%/ 0C, -0.20%/ 0C and - 0.28%/ 0C, respectively.

KW - Absorber layer

KW - Bandgap

KW - Light intensity and AMPS-1D

KW - Multijunction

KW - Operating temperature

KW - Single junction

UR - http://www.scopus.com/inward/record.url?scp=84855898774&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84855898774&partnerID=8YFLogxK

M3 - Article

VL - 9

SP - 51

EP - 59

JO - Chalcogenide Letters

JF - Chalcogenide Letters

SN - 1584-8663

IS - 1

ER -