Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WNX Schottky Metal Structures for High-Power Applications

Ting En Hsieh, Yueh Chin Lin, Chung Ming Chu, Yu Lin Chuang, Yu Xiang Huang, Wang Cheng Shi, Chang Fu Dee, Burhanuddin Yeop Majlis, Wei I. Lee, Edward Yi Chang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In this study, an Au-free AlGaN/GaN high-electron-mobility transistor (HEMT) with Ti/Al/W ohmic and WNx Schottky metal structures is fabricated and characterized. The device exhibits smooth surface morphology after metallization and shows excellent direct-current (DC) characteristics. The device also demonstrates better performance than the conventional HEMTs under high voltage stress. Furthermore, the Au-free AlGaN/GaN HEMT shows stable device performance after annealing at 400°C. Thus, the Ti/Al/W ohmic and WNX Schottky metals can be applied in the manufacturing of GaN HEMT to replace the Au based contacts to reduce the manufacturing costs of the GaN HEMT devices with comparable device performance.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalJournal of Electronic Materials
DOIs
Publication statusAccepted/In press - 27 Apr 2016

Fingerprint

High electron mobility transistors
high electron mobility transistors
Metals
metals
manufacturing
Metallizing
Surface morphology
high voltages
direct current
Annealing
costs
annealing
Electric potential
Costs
aluminum gallium nitride

Keywords

  • Au-free
  • GaN HEMT
  • high-voltage stress
  • Schottky barrier height
  • WN metal

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WNX Schottky Metal Structures for High-Power Applications. / Hsieh, Ting En; Lin, Yueh Chin; Chu, Chung Ming; Chuang, Yu Lin; Huang, Yu Xiang; Shi, Wang Cheng; Dee, Chang Fu; Yeop Majlis, Burhanuddin; Lee, Wei I.; Chang, Edward Yi.

In: Journal of Electronic Materials, 27.04.2016, p. 1-5.

Research output: Contribution to journalArticle

Hsieh, Ting En ; Lin, Yueh Chin ; Chu, Chung Ming ; Chuang, Yu Lin ; Huang, Yu Xiang ; Shi, Wang Cheng ; Dee, Chang Fu ; Yeop Majlis, Burhanuddin ; Lee, Wei I. ; Chang, Edward Yi. / Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WNX Schottky Metal Structures for High-Power Applications. In: Journal of Electronic Materials. 2016 ; pp. 1-5.
@article{063de2dd4c1449aaa6a39b50e7e1dcd9,
title = "Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WNX Schottky Metal Structures for High-Power Applications",
abstract = "In this study, an Au-free AlGaN/GaN high-electron-mobility transistor (HEMT) with Ti/Al/W ohmic and WNx Schottky metal structures is fabricated and characterized. The device exhibits smooth surface morphology after metallization and shows excellent direct-current (DC) characteristics. The device also demonstrates better performance than the conventional HEMTs under high voltage stress. Furthermore, the Au-free AlGaN/GaN HEMT shows stable device performance after annealing at 400°C. Thus, the Ti/Al/W ohmic and WNX Schottky metals can be applied in the manufacturing of GaN HEMT to replace the Au based contacts to reduce the manufacturing costs of the GaN HEMT devices with comparable device performance.",
keywords = "Au-free, GaN HEMT, high-voltage stress, Schottky barrier height, WN metal",
author = "Hsieh, {Ting En} and Lin, {Yueh Chin} and Chu, {Chung Ming} and Chuang, {Yu Lin} and Huang, {Yu Xiang} and Shi, {Wang Cheng} and Dee, {Chang Fu} and {Yeop Majlis}, Burhanuddin and Lee, {Wei I.} and Chang, {Edward Yi}",
year = "2016",
month = "4",
day = "27",
doi = "10.1007/s11664-016-4534-1",
language = "English",
pages = "1--5",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",

}

TY - JOUR

T1 - Au-Free GaN High-Electron-Mobility Transistor with Ti/Al/W Ohmic and WNX Schottky Metal Structures for High-Power Applications

AU - Hsieh, Ting En

AU - Lin, Yueh Chin

AU - Chu, Chung Ming

AU - Chuang, Yu Lin

AU - Huang, Yu Xiang

AU - Shi, Wang Cheng

AU - Dee, Chang Fu

AU - Yeop Majlis, Burhanuddin

AU - Lee, Wei I.

AU - Chang, Edward Yi

PY - 2016/4/27

Y1 - 2016/4/27

N2 - In this study, an Au-free AlGaN/GaN high-electron-mobility transistor (HEMT) with Ti/Al/W ohmic and WNx Schottky metal structures is fabricated and characterized. The device exhibits smooth surface morphology after metallization and shows excellent direct-current (DC) characteristics. The device also demonstrates better performance than the conventional HEMTs under high voltage stress. Furthermore, the Au-free AlGaN/GaN HEMT shows stable device performance after annealing at 400°C. Thus, the Ti/Al/W ohmic and WNX Schottky metals can be applied in the manufacturing of GaN HEMT to replace the Au based contacts to reduce the manufacturing costs of the GaN HEMT devices with comparable device performance.

AB - In this study, an Au-free AlGaN/GaN high-electron-mobility transistor (HEMT) with Ti/Al/W ohmic and WNx Schottky metal structures is fabricated and characterized. The device exhibits smooth surface morphology after metallization and shows excellent direct-current (DC) characteristics. The device also demonstrates better performance than the conventional HEMTs under high voltage stress. Furthermore, the Au-free AlGaN/GaN HEMT shows stable device performance after annealing at 400°C. Thus, the Ti/Al/W ohmic and WNX Schottky metals can be applied in the manufacturing of GaN HEMT to replace the Au based contacts to reduce the manufacturing costs of the GaN HEMT devices with comparable device performance.

KW - Au-free

KW - GaN HEMT

KW - high-voltage stress

KW - Schottky barrier height

KW - WN metal

UR - http://www.scopus.com/inward/record.url?scp=84964411273&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84964411273&partnerID=8YFLogxK

U2 - 10.1007/s11664-016-4534-1

DO - 10.1007/s11664-016-4534-1

M3 - Article

SP - 1

EP - 5

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

ER -