'Atomistic' simulation of RTS amplitudes due to single and multiple charged defect states and their interactions

Muhammad Faiz Bukhori, Tibor Grasser, Ben Kaczer, Reisinger Hans, Asen Asenov

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

We investigate the experimentally observed gate voltage dependence of the step heights induced by charged defects. Taking into account the intrinsic variability source of random dopants, our simulations confirm that the location of the defect with respect to the critical current percolation path affects the response of the trap to the applied gate bias. However, the details of the bias dependence of this response depend on the exact location relative to the percolation path. Furthermore, the impact of the various charge states of the defect on the step heights is investigated.

Original languageEnglish
Title of host publicationIEEE International Integrated Reliability Workshop Final Report
Pages76-79
Number of pages4
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event2010 IEEE International Integrated Reliability Workshop, IIRW 2010 - South Lake Tahoe, CA
Duration: 17 Oct 201021 Oct 2010

Other

Other2010 IEEE International Integrated Reliability Workshop, IIRW 2010
CitySouth Lake Tahoe, CA
Period17/10/1021/10/10

Fingerprint

Defects
Critical currents
Doping (additives)
Electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

Cite this

Bukhori, M. F., Grasser, T., Kaczer, B., Hans, R., & Asenov, A. (2010). 'Atomistic' simulation of RTS amplitudes due to single and multiple charged defect states and their interactions. In IEEE International Integrated Reliability Workshop Final Report (pp. 76-79). [5706490] https://doi.org/10.1109/IIRW.2010.5706490

'Atomistic' simulation of RTS amplitudes due to single and multiple charged defect states and their interactions. / Bukhori, Muhammad Faiz; Grasser, Tibor; Kaczer, Ben; Hans, Reisinger; Asenov, Asen.

IEEE International Integrated Reliability Workshop Final Report. 2010. p. 76-79 5706490.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Bukhori, MF, Grasser, T, Kaczer, B, Hans, R & Asenov, A 2010, 'Atomistic' simulation of RTS amplitudes due to single and multiple charged defect states and their interactions. in IEEE International Integrated Reliability Workshop Final Report., 5706490, pp. 76-79, 2010 IEEE International Integrated Reliability Workshop, IIRW 2010, South Lake Tahoe, CA, 17/10/10. https://doi.org/10.1109/IIRW.2010.5706490
Bukhori MF, Grasser T, Kaczer B, Hans R, Asenov A. 'Atomistic' simulation of RTS amplitudes due to single and multiple charged defect states and their interactions. In IEEE International Integrated Reliability Workshop Final Report. 2010. p. 76-79. 5706490 https://doi.org/10.1109/IIRW.2010.5706490
Bukhori, Muhammad Faiz ; Grasser, Tibor ; Kaczer, Ben ; Hans, Reisinger ; Asenov, Asen. / 'Atomistic' simulation of RTS amplitudes due to single and multiple charged defect states and their interactions. IEEE International Integrated Reliability Workshop Final Report. 2010. pp. 76-79
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