Area-changed capacitive accelerometer using 3-mask fabrication process

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

This paper presents an area-changed capacitive accelerometer using a 3-mask fabrication process. The accelerometer is designed as finger structures connected in parallel that have a differential capacitor arrangement. The movable electrodes are mounted on a proof mass of silicon and a pair of stationary electrodes of polysilicon is formed under the mass with a 3 μm air gap. The fabrication process utilizes silicon/glass anodic bonding and deep reactive ion etching (DRIE) for high aspect ratio etching. The simulated mass displacement change rate is 0.076 μm/g and the overall sensitivity is -0.04/μm. This type of accelerometer will be characterized for low-g as well as for medium-g applications.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsJ.-C. Chiao, A.J. Hariz, D.N. Jamieson, G. Parish, V.K. Varadan
Pages482-488
Number of pages7
Volume5276
DOIs
Publication statusPublished - 2004
EventDevice and Process Technologies for MEMS, Microelectronics, and Photonics III - Perth, WA, Australia
Duration: 10 Dec 200312 Dec 2003

Other

OtherDevice and Process Technologies for MEMS, Microelectronics, and Photonics III
CountryAustralia
CityPerth, WA
Period10/12/0312/12/03

Fingerprint

accelerometers
Accelerometers
Masks
masks
Fabrication
fabrication
etching
Silicon
Electrodes
electrodes
Reactive ion etching
silicon
high aspect ratio
Polysilicon
Aspect ratio
Etching
capacitors
Capacitors
Glass
glass

Keywords

  • Area-changed
  • DRIE
  • Fabrication
  • MEMS
  • Microaccelerometer
  • Wafer bonding

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Yeop Majlis, B., Bais, B., & Tamsir, A. S. (2004). Area-changed capacitive accelerometer using 3-mask fabrication process. In J-C. Chiao, A. J. Hariz, D. N. Jamieson, G. Parish, & V. K. Varadan (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 5276, pp. 482-488) https://doi.org/10.1117/12.523631

Area-changed capacitive accelerometer using 3-mask fabrication process. / Yeop Majlis, Burhanuddin; Bais, Badariah; Tamsir, Agus Santoso.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / J.-C. Chiao; A.J. Hariz; D.N. Jamieson; G. Parish; V.K. Varadan. Vol. 5276 2004. p. 482-488.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yeop Majlis, B, Bais, B & Tamsir, AS 2004, Area-changed capacitive accelerometer using 3-mask fabrication process. in J-C Chiao, AJ Hariz, DN Jamieson, G Parish & VK Varadan (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 5276, pp. 482-488, Device and Process Technologies for MEMS, Microelectronics, and Photonics III, Perth, WA, Australia, 10/12/03. https://doi.org/10.1117/12.523631
Yeop Majlis B, Bais B, Tamsir AS. Area-changed capacitive accelerometer using 3-mask fabrication process. In Chiao J-C, Hariz AJ, Jamieson DN, Parish G, Varadan VK, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 5276. 2004. p. 482-488 https://doi.org/10.1117/12.523631
Yeop Majlis, Burhanuddin ; Bais, Badariah ; Tamsir, Agus Santoso. / Area-changed capacitive accelerometer using 3-mask fabrication process. Proceedings of SPIE - The International Society for Optical Engineering. editor / J.-C. Chiao ; A.J. Hariz ; D.N. Jamieson ; G. Parish ; V.K. Varadan. Vol. 5276 2004. pp. 482-488
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