Annealing effect on the structural and optical properties of embedded Au nanoparticles in silicon suboxide films

Keewah Chan, Boon Tong Goh, Saadah Abdul Rahman, Muhamad Rasat Muhamad, Chang Fu Dee, Zarina Aspanut

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Au/SiO x nanocomposite films have been fabricated by co-sputtering Au wires and SiO 2 target using an RF magnetron co-sputtering system before the thermal annealing process at different temperatures. The structural and optical properties of the samples were characterized using X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), Fourier transform infrared spectroscopy (FTIR), optical transmission, and reflection spectroscopy. XPS analysis confirms that the as-prepared SiO x films are silicon-rich suboxide films. FESEM images reveal that with an increase in annealing temperature, the embedded Au NPs tend to diffuse toward the surface of the SiO x films. In IR spectra, the intensity of the Si-O-Si absorption band increases with the annealing temperature. Optical spectra reveal that the position and intensity of the surface plasmon resonance (SPR) peak are dominated by the effect of the inter-particle distance and size of the Au NPs embedded in the SiO x films, respectively. The SPR absorption peak shows the blue-shift from 672 to 600 nm with an increase in annealing temperature. The growth of silica nanowires (SiO x NWs) is observed in the film prepared on a c-Si substrate instead of a quartz substrate and annealed at temperatures of 1000 °C.

Original languageEnglish
Pages (from-to)1367-1372
Number of pages6
JournalVacuum
Volume86
Issue number9
DOIs
Publication statusPublished - 14 Mar 2012

Fingerprint

Silicon
Structural properties
Optical properties
Annealing
Nanoparticles
optical properties
nanoparticles
annealing
silicon
Surface plasmon resonance
surface plasmon resonance
Field emission
Sputtering
field emission
X ray photoelectron spectroscopy
Temperature
sputtering
temperature
photoelectron spectroscopy
Scanning electron microscopy

Keywords

  • Gold nanoparticle
  • Plasmonics
  • Silica nanowires
  • Surface plasmon resonance

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Instrumentation
  • Surfaces, Coatings and Films

Cite this

Annealing effect on the structural and optical properties of embedded Au nanoparticles in silicon suboxide films. / Chan, Keewah; Goh, Boon Tong; Rahman, Saadah Abdul; Muhamad, Muhamad Rasat; Dee, Chang Fu; Aspanut, Zarina.

In: Vacuum, Vol. 86, No. 9, 14.03.2012, p. 1367-1372.

Research output: Contribution to journalArticle

Chan, Keewah ; Goh, Boon Tong ; Rahman, Saadah Abdul ; Muhamad, Muhamad Rasat ; Dee, Chang Fu ; Aspanut, Zarina. / Annealing effect on the structural and optical properties of embedded Au nanoparticles in silicon suboxide films. In: Vacuum. 2012 ; Vol. 86, No. 9. pp. 1367-1372.
@article{472b6647b5bf4a2fb54fb38d601e079f,
title = "Annealing effect on the structural and optical properties of embedded Au nanoparticles in silicon suboxide films",
abstract = "Au/SiO x nanocomposite films have been fabricated by co-sputtering Au wires and SiO 2 target using an RF magnetron co-sputtering system before the thermal annealing process at different temperatures. The structural and optical properties of the samples were characterized using X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), Fourier transform infrared spectroscopy (FTIR), optical transmission, and reflection spectroscopy. XPS analysis confirms that the as-prepared SiO x films are silicon-rich suboxide films. FESEM images reveal that with an increase in annealing temperature, the embedded Au NPs tend to diffuse toward the surface of the SiO x films. In IR spectra, the intensity of the Si-O-Si absorption band increases with the annealing temperature. Optical spectra reveal that the position and intensity of the surface plasmon resonance (SPR) peak are dominated by the effect of the inter-particle distance and size of the Au NPs embedded in the SiO x films, respectively. The SPR absorption peak shows the blue-shift from 672 to 600 nm with an increase in annealing temperature. The growth of silica nanowires (SiO x NWs) is observed in the film prepared on a c-Si substrate instead of a quartz substrate and annealed at temperatures of 1000 °C.",
keywords = "Gold nanoparticle, Plasmonics, Silica nanowires, Surface plasmon resonance",
author = "Keewah Chan and Goh, {Boon Tong} and Rahman, {Saadah Abdul} and Muhamad, {Muhamad Rasat} and Dee, {Chang Fu} and Zarina Aspanut",
year = "2012",
month = "3",
day = "14",
doi = "10.1016/j.vacuum.2012.01.005",
language = "English",
volume = "86",
pages = "1367--1372",
journal = "Vacuum",
issn = "0042-207X",
publisher = "Elsevier Limited",
number = "9",

}

TY - JOUR

T1 - Annealing effect on the structural and optical properties of embedded Au nanoparticles in silicon suboxide films

AU - Chan, Keewah

AU - Goh, Boon Tong

AU - Rahman, Saadah Abdul

AU - Muhamad, Muhamad Rasat

AU - Dee, Chang Fu

AU - Aspanut, Zarina

PY - 2012/3/14

Y1 - 2012/3/14

N2 - Au/SiO x nanocomposite films have been fabricated by co-sputtering Au wires and SiO 2 target using an RF magnetron co-sputtering system before the thermal annealing process at different temperatures. The structural and optical properties of the samples were characterized using X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), Fourier transform infrared spectroscopy (FTIR), optical transmission, and reflection spectroscopy. XPS analysis confirms that the as-prepared SiO x films are silicon-rich suboxide films. FESEM images reveal that with an increase in annealing temperature, the embedded Au NPs tend to diffuse toward the surface of the SiO x films. In IR spectra, the intensity of the Si-O-Si absorption band increases with the annealing temperature. Optical spectra reveal that the position and intensity of the surface plasmon resonance (SPR) peak are dominated by the effect of the inter-particle distance and size of the Au NPs embedded in the SiO x films, respectively. The SPR absorption peak shows the blue-shift from 672 to 600 nm with an increase in annealing temperature. The growth of silica nanowires (SiO x NWs) is observed in the film prepared on a c-Si substrate instead of a quartz substrate and annealed at temperatures of 1000 °C.

AB - Au/SiO x nanocomposite films have been fabricated by co-sputtering Au wires and SiO 2 target using an RF magnetron co-sputtering system before the thermal annealing process at different temperatures. The structural and optical properties of the samples were characterized using X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), Fourier transform infrared spectroscopy (FTIR), optical transmission, and reflection spectroscopy. XPS analysis confirms that the as-prepared SiO x films are silicon-rich suboxide films. FESEM images reveal that with an increase in annealing temperature, the embedded Au NPs tend to diffuse toward the surface of the SiO x films. In IR spectra, the intensity of the Si-O-Si absorption band increases with the annealing temperature. Optical spectra reveal that the position and intensity of the surface plasmon resonance (SPR) peak are dominated by the effect of the inter-particle distance and size of the Au NPs embedded in the SiO x films, respectively. The SPR absorption peak shows the blue-shift from 672 to 600 nm with an increase in annealing temperature. The growth of silica nanowires (SiO x NWs) is observed in the film prepared on a c-Si substrate instead of a quartz substrate and annealed at temperatures of 1000 °C.

KW - Gold nanoparticle

KW - Plasmonics

KW - Silica nanowires

KW - Surface plasmon resonance

UR - http://www.scopus.com/inward/record.url?scp=84858999441&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84858999441&partnerID=8YFLogxK

U2 - 10.1016/j.vacuum.2012.01.005

DO - 10.1016/j.vacuum.2012.01.005

M3 - Article

AN - SCOPUS:84858999441

VL - 86

SP - 1367

EP - 1372

JO - Vacuum

JF - Vacuum

SN - 0042-207X

IS - 9

ER -