Analysis the effect of control factors optimization on the threshold voltage of 18 nm PMOS using L27 taguchi method

Norani Bte Atanb, Burhanuddin Yeop Majlis, Ibrahin Ahmad, K. H. Chong

Research output: Contribution to journalArticle

Abstract

This research paper is about the investigation of Halo Implantation, Halo Implantation Energy, Halo Tilt, Compensation Implantation and Source/Drain Implantation. They are types of control factors that used in achievement of the threshold voltage value. To support the successfully of the threshold voltage (VTH) producing, Taguchi method by using L27 orthogonal array was used to optimize the control factors variation. This analysis has involved with 2 main factors which are break down into five control factors and two noise factors. The five control factors were varied with three levels of each and the two noise factors were varied with two levels of each in 27 experiments. In Taguchi method, the statistics data of 18 nm PMOS transistor are from the signal noise ratio (SNR) with nominal-the best (NTB) and the analysis of variance (ANOVA) are executed to minimize the variance of threshold voltage. This experiment implanted by using Virtual Wafer Fabrication SILVACO software which is to design and fabricate the transistor device. Experimental results revealed that the optimization method is achieved to perform the threshold voltage value with least variance and the percent, which is only 2.16%. The threshold voltage value from the experiment shows -0.308517 volts while the target value that is -0.302 volts from value of International Technology Roadmap of semiconductor, ITRS 2012. The threshold voltage value for 18 nm PMOS transistor is well within the range of -0.302 ± 12.7% volts that is recommendation by the International Roadmap for Semiconductor prediction 2012.

Original languageEnglish
Pages (from-to)934-942
Number of pages9
JournalIndonesian Journal of Electrical Engineering and Computer Science
Volume10
Issue number3
DOIs
Publication statusPublished - 1 Jun 2018

Fingerprint

Taguchi Method
Taguchi methods
Threshold voltage
Implantation
Voltage
Optimization
Noise Factor
Transistors
Semiconductors
Semiconductor materials
Experiment
Orthogonal Array
Experiments
Analysis of variance
Tilt
Analysis of variance (ANOVA)
Wafer
Percent
Categorical or nominal
Breakdown

Keywords

  • 18nm PMOS
  • Control factors
  • L27 Taguchi method
  • SILVACO
  • Threshold voltage

ASJC Scopus subject areas

  • Signal Processing
  • Information Systems
  • Hardware and Architecture
  • Computer Networks and Communications
  • Control and Optimization
  • Electrical and Electronic Engineering

Cite this

Analysis the effect of control factors optimization on the threshold voltage of 18 nm PMOS using L27 taguchi method. / Bte Atanb, Norani; Yeop Majlis, Burhanuddin; Ahmad, Ibrahin; Chong, K. H.

In: Indonesian Journal of Electrical Engineering and Computer Science, Vol. 10, No. 3, 01.06.2018, p. 934-942.

Research output: Contribution to journalArticle

@article{b1642a1625994344a461cb046bd7e6c4,
title = "Analysis the effect of control factors optimization on the threshold voltage of 18 nm PMOS using L27 taguchi method",
abstract = "This research paper is about the investigation of Halo Implantation, Halo Implantation Energy, Halo Tilt, Compensation Implantation and Source/Drain Implantation. They are types of control factors that used in achievement of the threshold voltage value. To support the successfully of the threshold voltage (VTH) producing, Taguchi method by using L27 orthogonal array was used to optimize the control factors variation. This analysis has involved with 2 main factors which are break down into five control factors and two noise factors. The five control factors were varied with three levels of each and the two noise factors were varied with two levels of each in 27 experiments. In Taguchi method, the statistics data of 18 nm PMOS transistor are from the signal noise ratio (SNR) with nominal-the best (NTB) and the analysis of variance (ANOVA) are executed to minimize the variance of threshold voltage. This experiment implanted by using Virtual Wafer Fabrication SILVACO software which is to design and fabricate the transistor device. Experimental results revealed that the optimization method is achieved to perform the threshold voltage value with least variance and the percent, which is only 2.16{\%}. The threshold voltage value from the experiment shows -0.308517 volts while the target value that is -0.302 volts from value of International Technology Roadmap of semiconductor, ITRS 2012. The threshold voltage value for 18 nm PMOS transistor is well within the range of -0.302 ± 12.7{\%} volts that is recommendation by the International Roadmap for Semiconductor prediction 2012.",
keywords = "18nm PMOS, Control factors, L27 Taguchi method, SILVACO, Threshold voltage",
author = "{Bte Atanb}, Norani and {Yeop Majlis}, Burhanuddin and Ibrahin Ahmad and Chong, {K. H.}",
year = "2018",
month = "6",
day = "1",
doi = "10.11591/ijeecs.v10.i3.pp934-942",
language = "English",
volume = "10",
pages = "934--942",
journal = "Indonesian Journal of Electrical Engineering and Computer Science",
issn = "2502-4752",
publisher = "Institute of Advanced Engineering and Science (IAES)",
number = "3",

}

TY - JOUR

T1 - Analysis the effect of control factors optimization on the threshold voltage of 18 nm PMOS using L27 taguchi method

AU - Bte Atanb, Norani

AU - Yeop Majlis, Burhanuddin

AU - Ahmad, Ibrahin

AU - Chong, K. H.

PY - 2018/6/1

Y1 - 2018/6/1

N2 - This research paper is about the investigation of Halo Implantation, Halo Implantation Energy, Halo Tilt, Compensation Implantation and Source/Drain Implantation. They are types of control factors that used in achievement of the threshold voltage value. To support the successfully of the threshold voltage (VTH) producing, Taguchi method by using L27 orthogonal array was used to optimize the control factors variation. This analysis has involved with 2 main factors which are break down into five control factors and two noise factors. The five control factors were varied with three levels of each and the two noise factors were varied with two levels of each in 27 experiments. In Taguchi method, the statistics data of 18 nm PMOS transistor are from the signal noise ratio (SNR) with nominal-the best (NTB) and the analysis of variance (ANOVA) are executed to minimize the variance of threshold voltage. This experiment implanted by using Virtual Wafer Fabrication SILVACO software which is to design and fabricate the transistor device. Experimental results revealed that the optimization method is achieved to perform the threshold voltage value with least variance and the percent, which is only 2.16%. The threshold voltage value from the experiment shows -0.308517 volts while the target value that is -0.302 volts from value of International Technology Roadmap of semiconductor, ITRS 2012. The threshold voltage value for 18 nm PMOS transistor is well within the range of -0.302 ± 12.7% volts that is recommendation by the International Roadmap for Semiconductor prediction 2012.

AB - This research paper is about the investigation of Halo Implantation, Halo Implantation Energy, Halo Tilt, Compensation Implantation and Source/Drain Implantation. They are types of control factors that used in achievement of the threshold voltage value. To support the successfully of the threshold voltage (VTH) producing, Taguchi method by using L27 orthogonal array was used to optimize the control factors variation. This analysis has involved with 2 main factors which are break down into five control factors and two noise factors. The five control factors were varied with three levels of each and the two noise factors were varied with two levels of each in 27 experiments. In Taguchi method, the statistics data of 18 nm PMOS transistor are from the signal noise ratio (SNR) with nominal-the best (NTB) and the analysis of variance (ANOVA) are executed to minimize the variance of threshold voltage. This experiment implanted by using Virtual Wafer Fabrication SILVACO software which is to design and fabricate the transistor device. Experimental results revealed that the optimization method is achieved to perform the threshold voltage value with least variance and the percent, which is only 2.16%. The threshold voltage value from the experiment shows -0.308517 volts while the target value that is -0.302 volts from value of International Technology Roadmap of semiconductor, ITRS 2012. The threshold voltage value for 18 nm PMOS transistor is well within the range of -0.302 ± 12.7% volts that is recommendation by the International Roadmap for Semiconductor prediction 2012.

KW - 18nm PMOS

KW - Control factors

KW - L27 Taguchi method

KW - SILVACO

KW - Threshold voltage

UR - http://www.scopus.com/inward/record.url?scp=85044584855&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85044584855&partnerID=8YFLogxK

U2 - 10.11591/ijeecs.v10.i3.pp934-942

DO - 10.11591/ijeecs.v10.i3.pp934-942

M3 - Article

AN - SCOPUS:85044584855

VL - 10

SP - 934

EP - 942

JO - Indonesian Journal of Electrical Engineering and Computer Science

JF - Indonesian Journal of Electrical Engineering and Computer Science

SN - 2502-4752

IS - 3

ER -