Analysis of threshold voltage variance in 45nm n-channel device using L27 orthogonal array method

F. Salehuddin, A. S. Mohd Zain, N. M. Idris, A. K. Mat Yamin, A. M. Abdul Hamid, I. Ahmad, P. Susthitha Menon N V Visvanathan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

In this research, orthogonal array of L27 in Taguchi Method was used to optimize the process parameters (control factors) variation in 45nm n-channel device with considering the interaction effect. The signal-to-noise (S/N) ratio and analysis of variance (ANOVA) are employed to study the performance characteristics of the device. There are only five process parameters (control factors) were varied for 3 levels to performed 27 experiments. Whereas, the two noise factors were varied for 2 levels to get four readings of Vth for every row of experiment. In this study, nominal-the-best characteristic was used in an effort to minimize the variance of Vth. The results show that the Vth values have least variance and percent different from the target value (0.287V) for this device is 1.42% (0.293V). This value is closer with International Technology Roadmap for Semiconductor (ITRS) prediction.

Original languageEnglish
Title of host publicationAdvanced Materials Research
Pages297-302
Number of pages6
Volume903
DOIs
Publication statusPublished - 2014
Event1st International Manufacturing Engineering Conference, iMEC 2013 - Gambang, Kuantan, Pahang
Duration: 1 Jul 20133 Jul 2013

Publication series

NameAdvanced Materials Research
Volume903
ISSN (Print)10226680

Other

Other1st International Manufacturing Engineering Conference, iMEC 2013
CityGambang, Kuantan, Pahang
Period1/7/133/7/13

Fingerprint

Threshold voltage
Taguchi methods
Analysis of variance (ANOVA)
Signal to noise ratio
Experiments
Semiconductor materials

Keywords

  • ANOVA
  • NMOS device
  • PMOS device
  • S/N ratio
  • Taguchi method
  • Threshold voltage

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Salehuddin, F., Mohd Zain, A. S., Idris, N. M., Mat Yamin, A. K., Abdul Hamid, A. M., Ahmad, I., & N V Visvanathan, P. S. M. (2014). Analysis of threshold voltage variance in 45nm n-channel device using L27 orthogonal array method. In Advanced Materials Research (Vol. 903, pp. 297-302). (Advanced Materials Research; Vol. 903). https://doi.org/10.4028/www.scientific.net/AMR.903.297

Analysis of threshold voltage variance in 45nm n-channel device using L27 orthogonal array method. / Salehuddin, F.; Mohd Zain, A. S.; Idris, N. M.; Mat Yamin, A. K.; Abdul Hamid, A. M.; Ahmad, I.; N V Visvanathan, P. Susthitha Menon.

Advanced Materials Research. Vol. 903 2014. p. 297-302 (Advanced Materials Research; Vol. 903).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Salehuddin, F, Mohd Zain, AS, Idris, NM, Mat Yamin, AK, Abdul Hamid, AM, Ahmad, I & N V Visvanathan, PSM 2014, Analysis of threshold voltage variance in 45nm n-channel device using L27 orthogonal array method. in Advanced Materials Research. vol. 903, Advanced Materials Research, vol. 903, pp. 297-302, 1st International Manufacturing Engineering Conference, iMEC 2013, Gambang, Kuantan, Pahang, 1/7/13. https://doi.org/10.4028/www.scientific.net/AMR.903.297
Salehuddin F, Mohd Zain AS, Idris NM, Mat Yamin AK, Abdul Hamid AM, Ahmad I et al. Analysis of threshold voltage variance in 45nm n-channel device using L27 orthogonal array method. In Advanced Materials Research. Vol. 903. 2014. p. 297-302. (Advanced Materials Research). https://doi.org/10.4028/www.scientific.net/AMR.903.297
Salehuddin, F. ; Mohd Zain, A. S. ; Idris, N. M. ; Mat Yamin, A. K. ; Abdul Hamid, A. M. ; Ahmad, I. ; N V Visvanathan, P. Susthitha Menon. / Analysis of threshold voltage variance in 45nm n-channel device using L27 orthogonal array method. Advanced Materials Research. Vol. 903 2014. pp. 297-302 (Advanced Materials Research).
@inproceedings{e2ad8e76e7c943cd95b79944decddcfd,
title = "Analysis of threshold voltage variance in 45nm n-channel device using L27 orthogonal array method",
abstract = "In this research, orthogonal array of L27 in Taguchi Method was used to optimize the process parameters (control factors) variation in 45nm n-channel device with considering the interaction effect. The signal-to-noise (S/N) ratio and analysis of variance (ANOVA) are employed to study the performance characteristics of the device. There are only five process parameters (control factors) were varied for 3 levels to performed 27 experiments. Whereas, the two noise factors were varied for 2 levels to get four readings of Vth for every row of experiment. In this study, nominal-the-best characteristic was used in an effort to minimize the variance of Vth. The results show that the Vth values have least variance and percent different from the target value (0.287V) for this device is 1.42{\%} (0.293V). This value is closer with International Technology Roadmap for Semiconductor (ITRS) prediction.",
keywords = "ANOVA, NMOS device, PMOS device, S/N ratio, Taguchi method, Threshold voltage",
author = "F. Salehuddin and {Mohd Zain}, {A. S.} and Idris, {N. M.} and {Mat Yamin}, {A. K.} and {Abdul Hamid}, {A. M.} and I. Ahmad and {N V Visvanathan}, {P. Susthitha Menon}",
year = "2014",
doi = "10.4028/www.scientific.net/AMR.903.297",
language = "English",
isbn = "9783038350200",
volume = "903",
series = "Advanced Materials Research",
pages = "297--302",
booktitle = "Advanced Materials Research",

}

TY - GEN

T1 - Analysis of threshold voltage variance in 45nm n-channel device using L27 orthogonal array method

AU - Salehuddin, F.

AU - Mohd Zain, A. S.

AU - Idris, N. M.

AU - Mat Yamin, A. K.

AU - Abdul Hamid, A. M.

AU - Ahmad, I.

AU - N V Visvanathan, P. Susthitha Menon

PY - 2014

Y1 - 2014

N2 - In this research, orthogonal array of L27 in Taguchi Method was used to optimize the process parameters (control factors) variation in 45nm n-channel device with considering the interaction effect. The signal-to-noise (S/N) ratio and analysis of variance (ANOVA) are employed to study the performance characteristics of the device. There are only five process parameters (control factors) were varied for 3 levels to performed 27 experiments. Whereas, the two noise factors were varied for 2 levels to get four readings of Vth for every row of experiment. In this study, nominal-the-best characteristic was used in an effort to minimize the variance of Vth. The results show that the Vth values have least variance and percent different from the target value (0.287V) for this device is 1.42% (0.293V). This value is closer with International Technology Roadmap for Semiconductor (ITRS) prediction.

AB - In this research, orthogonal array of L27 in Taguchi Method was used to optimize the process parameters (control factors) variation in 45nm n-channel device with considering the interaction effect. The signal-to-noise (S/N) ratio and analysis of variance (ANOVA) are employed to study the performance characteristics of the device. There are only five process parameters (control factors) were varied for 3 levels to performed 27 experiments. Whereas, the two noise factors were varied for 2 levels to get four readings of Vth for every row of experiment. In this study, nominal-the-best characteristic was used in an effort to minimize the variance of Vth. The results show that the Vth values have least variance and percent different from the target value (0.287V) for this device is 1.42% (0.293V). This value is closer with International Technology Roadmap for Semiconductor (ITRS) prediction.

KW - ANOVA

KW - NMOS device

KW - PMOS device

KW - S/N ratio

KW - Taguchi method

KW - Threshold voltage

UR - http://www.scopus.com/inward/record.url?scp=84896876859&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84896876859&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/AMR.903.297

DO - 10.4028/www.scientific.net/AMR.903.297

M3 - Conference contribution

AN - SCOPUS:84896876859

SN - 9783038350200

VL - 903

T3 - Advanced Materials Research

SP - 297

EP - 302

BT - Advanced Materials Research

ER -