Analysis of silicon-on-insulator (SOI) buried waveguide phase modulator

Hanim Abdul Razak, Hazura Haroon, Mardiana Bidin, Sahbudin Shaari, P. Susthitha Menon N V Visvanathan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The analyses of the simulation of a single mode buried waveguide optical phase modulator based on SOI material are here reported. The structure has been simulated by Athena from Silvaco simulation package. The buried waveguide is created by doping phosphorus with concentration of 10e15 cm-3 into the substrate. The real refractive index and the absorption coefficient of the waveguide are changed using the free carrier dispersion effect via carrier injection of a pn junction. The efficiency, VpLp is calculated and the performance is compared with that of the rib waveguide optical phase modulator of the same material and dimensions. Simulation shows that the device can be an efficient device for application in intensity modulation.

Original languageEnglish
Title of host publicationAdvanced Materials Research
Pages532-535
Number of pages4
Volume462
DOIs
Publication statusPublished - 2012
Event2011 International Conference on Material Science and Engineering Technology, ICMSET 2011 - Zhengzhou
Duration: 11 Nov 201113 Nov 2011

Publication series

NameAdvanced Materials Research
Volume462
ISSN (Print)10226680

Other

Other2011 International Conference on Material Science and Engineering Technology, ICMSET 2011
CityZhengzhou
Period11/11/1113/11/11

Fingerprint

Optical waveguides
Modulators
Waveguides
Silicon
Phosphorus
Refractive index
Doping (additives)
Modulation
Substrates

Keywords

  • Buried waveguide
  • Phase modulator
  • Silicon-on-insulator (SOI)

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Razak, H. A., Haroon, H., Bidin, M., Shaari, S., & N V Visvanathan, P. S. M. (2012). Analysis of silicon-on-insulator (SOI) buried waveguide phase modulator. In Advanced Materials Research (Vol. 462, pp. 532-535). (Advanced Materials Research; Vol. 462). https://doi.org/10.4028/www.scientific.net/AMR.462.532

Analysis of silicon-on-insulator (SOI) buried waveguide phase modulator. / Razak, Hanim Abdul; Haroon, Hazura; Bidin, Mardiana; Shaari, Sahbudin; N V Visvanathan, P. Susthitha Menon.

Advanced Materials Research. Vol. 462 2012. p. 532-535 (Advanced Materials Research; Vol. 462).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Razak, HA, Haroon, H, Bidin, M, Shaari, S & N V Visvanathan, PSM 2012, Analysis of silicon-on-insulator (SOI) buried waveguide phase modulator. in Advanced Materials Research. vol. 462, Advanced Materials Research, vol. 462, pp. 532-535, 2011 International Conference on Material Science and Engineering Technology, ICMSET 2011, Zhengzhou, 11/11/11. https://doi.org/10.4028/www.scientific.net/AMR.462.532
Razak HA, Haroon H, Bidin M, Shaari S, N V Visvanathan PSM. Analysis of silicon-on-insulator (SOI) buried waveguide phase modulator. In Advanced Materials Research. Vol. 462. 2012. p. 532-535. (Advanced Materials Research). https://doi.org/10.4028/www.scientific.net/AMR.462.532
Razak, Hanim Abdul ; Haroon, Hazura ; Bidin, Mardiana ; Shaari, Sahbudin ; N V Visvanathan, P. Susthitha Menon. / Analysis of silicon-on-insulator (SOI) buried waveguide phase modulator. Advanced Materials Research. Vol. 462 2012. pp. 532-535 (Advanced Materials Research).
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