Analysis of phase shifter length for forward biased silicon-on-insulator (SOI) optical modulator

A. R. Hanim, P. Susthitha Menon N V Visvanathan, S. Shaari, H. Hazura, B. Mardiana

Research output: Contribution to journalArticle

Abstract

This paper investigates the performance of a three-dimensional virtual model of a Silicon-on-Insulator (SOI) optical phase modulator using an industrial-based numerical simulator. The 3 dB bandwidth of the device was analyzed by varying the phase shifter length to 6, 12 and 18 μm. Then, the effect of varying the phase shifter length to different concentration of boron (p+ doped well) and phosphorus (n+ doped well) was observed. It can be deduced that with appropriate applied voltage selection, the device performs the best at 6μm phase shifter length and at higher concentration of the doped wells. The best performance of the device is at 1V, with 3 dB bandwidth of 1.4THz.

Original languageEnglish
Pages (from-to)305-308
Number of pages4
JournalOptoelectronics and Advanced Materials, Rapid Communications
Volume7
Issue number3-4
Publication statusPublished - 2013

Fingerprint

Light modulators
Phase shifters
Silicon
Bandwidth
Boron
Phosphorus
Modulators
Simulators
Electric potential

Keywords

  • 3 dB bandwidth
  • Phase shifter length
  • SOI current injection modulator

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Analysis of phase shifter length for forward biased silicon-on-insulator (SOI) optical modulator. / Hanim, A. R.; N V Visvanathan, P. Susthitha Menon; Shaari, S.; Hazura, H.; Mardiana, B.

In: Optoelectronics and Advanced Materials, Rapid Communications, Vol. 7, No. 3-4, 2013, p. 305-308.

Research output: Contribution to journalArticle

@article{d90dc590ef114338b33d6a6c115554b3,
title = "Analysis of phase shifter length for forward biased silicon-on-insulator (SOI) optical modulator",
abstract = "This paper investigates the performance of a three-dimensional virtual model of a Silicon-on-Insulator (SOI) optical phase modulator using an industrial-based numerical simulator. The 3 dB bandwidth of the device was analyzed by varying the phase shifter length to 6, 12 and 18 μm. Then, the effect of varying the phase shifter length to different concentration of boron (p+ doped well) and phosphorus (n+ doped well) was observed. It can be deduced that with appropriate applied voltage selection, the device performs the best at 6μm phase shifter length and at higher concentration of the doped wells. The best performance of the device is at 1V, with 3 dB bandwidth of 1.4THz.",
keywords = "3 dB bandwidth, Phase shifter length, SOI current injection modulator",
author = "Hanim, {A. R.} and {N V Visvanathan}, {P. Susthitha Menon} and S. Shaari and H. Hazura and B. Mardiana",
year = "2013",
language = "English",
volume = "7",
pages = "305--308",
journal = "Optoelectronics and Advanced Materials, Rapid Communications",
issn = "1842-6573",
publisher = "National Institute of Optoelectronics",
number = "3-4",

}

TY - JOUR

T1 - Analysis of phase shifter length for forward biased silicon-on-insulator (SOI) optical modulator

AU - Hanim, A. R.

AU - N V Visvanathan, P. Susthitha Menon

AU - Shaari, S.

AU - Hazura, H.

AU - Mardiana, B.

PY - 2013

Y1 - 2013

N2 - This paper investigates the performance of a three-dimensional virtual model of a Silicon-on-Insulator (SOI) optical phase modulator using an industrial-based numerical simulator. The 3 dB bandwidth of the device was analyzed by varying the phase shifter length to 6, 12 and 18 μm. Then, the effect of varying the phase shifter length to different concentration of boron (p+ doped well) and phosphorus (n+ doped well) was observed. It can be deduced that with appropriate applied voltage selection, the device performs the best at 6μm phase shifter length and at higher concentration of the doped wells. The best performance of the device is at 1V, with 3 dB bandwidth of 1.4THz.

AB - This paper investigates the performance of a three-dimensional virtual model of a Silicon-on-Insulator (SOI) optical phase modulator using an industrial-based numerical simulator. The 3 dB bandwidth of the device was analyzed by varying the phase shifter length to 6, 12 and 18 μm. Then, the effect of varying the phase shifter length to different concentration of boron (p+ doped well) and phosphorus (n+ doped well) was observed. It can be deduced that with appropriate applied voltage selection, the device performs the best at 6μm phase shifter length and at higher concentration of the doped wells. The best performance of the device is at 1V, with 3 dB bandwidth of 1.4THz.

KW - 3 dB bandwidth

KW - Phase shifter length

KW - SOI current injection modulator

UR - http://www.scopus.com/inward/record.url?scp=84878751734&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84878751734&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:84878751734

VL - 7

SP - 305

EP - 308

JO - Optoelectronics and Advanced Materials, Rapid Communications

JF - Optoelectronics and Advanced Materials, Rapid Communications

SN - 1842-6573

IS - 3-4

ER -