Analysis of Leakage Current Mechanism for Ni/Au Schottky Contact on InAlGaN/GaN HEMT

Franky Lumbantoruan, Chia Hsun Wu, Xia Xi Zheng, Sankalp K. Singh, Chang Fu Dee, Burhanuddin Yeop Majlis, Edward Yi Chang

Research output: Contribution to journalArticle

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Abstract

The gate leakage mechanism for InAlGaN/GaN high electron mobility transistors (HEMTs) is systematically studied using temperature-dependent gate current–voltage characteristics. The electric field across the barrier layer is calculated through the extracted polarization charge and dielectric constant of the InAlGaN/GaN HEMT. The gate current of the InAlGaN/GaN HEMT is analyzed by fitting the experimental data using Themionic Emission (TE), Poole–Frenkel (PF), and Fowler–Nordheim (FN) tunneling. The results show that 1) reverse leakage current in the thin InAlGaN barrier layer is dominated by FN tunneling due to triangular barrier formation; 2) for thicker barrier layer, the reverse leakage current at low electric field (<2.23 MV cm−1) is dominated by PF emission; 3) at high electric field near the threshold voltage the FN tunneling dominates. Extraction of effective barrier height by fitting the experimental data with models leads to the suggestion for the improvement of the device leakage current.

Original languageEnglish
Article number1700741
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume215
Issue number11
DOIs
Publication statusPublished - 6 Jun 2018

Fingerprint

High electron mobility transistors
high electron mobility transistors
Leakage currents
Gates (transistor)
electric contacts
leakage
barrier layers
Electric fields
electric fields
Threshold voltage
Permittivity
threshold voltage
Polarization
suggestion
permittivity
polarization
Temperature
temperature

Keywords

  • high-electron mobility transistors
  • InAlGaN
  • leakage current mechanism

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Analysis of Leakage Current Mechanism for Ni/Au Schottky Contact on InAlGaN/GaN HEMT. / Lumbantoruan, Franky; Wu, Chia Hsun; Zheng, Xia Xi; Singh, Sankalp K.; Dee, Chang Fu; Yeop Majlis, Burhanuddin; Chang, Edward Yi.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 215, No. 11, 1700741, 06.06.2018.

Research output: Contribution to journalArticle

Lumbantoruan, Franky ; Wu, Chia Hsun ; Zheng, Xia Xi ; Singh, Sankalp K. ; Dee, Chang Fu ; Yeop Majlis, Burhanuddin ; Chang, Edward Yi. / Analysis of Leakage Current Mechanism for Ni/Au Schottky Contact on InAlGaN/GaN HEMT. In: Physica Status Solidi (A) Applications and Materials Science. 2018 ; Vol. 215, No. 11.
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AU - Dee, Chang Fu

AU - Yeop Majlis, Burhanuddin

AU - Chang, Edward Yi

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