Analysis of absorber layer properties effect on CIGS solar cell performance using SCAPS

Nima Khoshsirat, Nurul Amziah Md Yunus, Mohd Nizar Hamidon, Suhaidi Shafie, Nowshad Amin

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Abstract This paper shows a numerical simulation and analysis of a copper-indium-gallium-diselenide (CIGS) solar cell performance. The Solar Cell Capacitance Simulator (SCAPS) software is used for multiple measurements. The impacts of absorber layer band gap and thickness variation on the cell's output parameters were extensively simulated. In this study, the CIGS band gap and electron affinity are first defined and formulated as mathematical functions of gallium (Ga) content ("x"). Then these new functions can predict the absorber layer band gap at different "x" and used to simulate and study of the cell performance. The analysis made from this numerical simulation has revealed the optimum energy band gap of the absorber layer to be 1.2 eV corresponding to x = 0.3. Subsequently, the cell efficiency is innovatively formulated as a function of Ga content in the absorber layer. The effect of absorber layer thickness on cell performance has also been simulated and its range was found to be between 2 μm and 3 μm and it is for the cell with low and optimum absorber layer band gap. Nevertheless, the cell with wide absorber layer band gap will increase the absorber layer thickness thus will cause reduction in cell efficiency.

Original languageEnglish
Article number55326
Pages (from-to)681-686
Number of pages6
JournalOptik
Volume126
Issue number7-8
DOIs
Publication statusPublished - 1 Apr 2015

Fingerprint

Gallium
Indium
simulators
gallium
indium
Copper
absorbers
Solar cells
Energy gap
Capacitance
solar cells
Simulators
capacitance
copper
cells
Electron affinity
Computer simulation
Band structure
Numerical analysis
electron affinity

Keywords

  • CIGS
  • Numerical simulation
  • SCAPS
  • Thin film solar cell

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Cite this

Khoshsirat, N., Md Yunus, N. A., Hamidon, M. N., Shafie, S., & Amin, N. (2015). Analysis of absorber layer properties effect on CIGS solar cell performance using SCAPS. Optik, 126(7-8), 681-686. [55326]. https://doi.org/10.1016/j.ijleo.2015.02.037

Analysis of absorber layer properties effect on CIGS solar cell performance using SCAPS. / Khoshsirat, Nima; Md Yunus, Nurul Amziah; Hamidon, Mohd Nizar; Shafie, Suhaidi; Amin, Nowshad.

In: Optik, Vol. 126, No. 7-8, 55326, 01.04.2015, p. 681-686.

Research output: Contribution to journalArticle

Khoshsirat, N, Md Yunus, NA, Hamidon, MN, Shafie, S & Amin, N 2015, 'Analysis of absorber layer properties effect on CIGS solar cell performance using SCAPS', Optik, vol. 126, no. 7-8, 55326, pp. 681-686. https://doi.org/10.1016/j.ijleo.2015.02.037
Khoshsirat N, Md Yunus NA, Hamidon MN, Shafie S, Amin N. Analysis of absorber layer properties effect on CIGS solar cell performance using SCAPS. Optik. 2015 Apr 1;126(7-8):681-686. 55326. https://doi.org/10.1016/j.ijleo.2015.02.037
Khoshsirat, Nima ; Md Yunus, Nurul Amziah ; Hamidon, Mohd Nizar ; Shafie, Suhaidi ; Amin, Nowshad. / Analysis of absorber layer properties effect on CIGS solar cell performance using SCAPS. In: Optik. 2015 ; Vol. 126, No. 7-8. pp. 681-686.
@article{3de571e6408a4ecb94e136ae0c459aec,
title = "Analysis of absorber layer properties effect on CIGS solar cell performance using SCAPS",
abstract = "Abstract This paper shows a numerical simulation and analysis of a copper-indium-gallium-diselenide (CIGS) solar cell performance. The Solar Cell Capacitance Simulator (SCAPS) software is used for multiple measurements. The impacts of absorber layer band gap and thickness variation on the cell's output parameters were extensively simulated. In this study, the CIGS band gap and electron affinity are first defined and formulated as mathematical functions of gallium (Ga) content ({"}x{"}). Then these new functions can predict the absorber layer band gap at different {"}x{"} and used to simulate and study of the cell performance. The analysis made from this numerical simulation has revealed the optimum energy band gap of the absorber layer to be 1.2 eV corresponding to x = 0.3. Subsequently, the cell efficiency is innovatively formulated as a function of Ga content in the absorber layer. The effect of absorber layer thickness on cell performance has also been simulated and its range was found to be between 2 μm and 3 μm and it is for the cell with low and optimum absorber layer band gap. Nevertheless, the cell with wide absorber layer band gap will increase the absorber layer thickness thus will cause reduction in cell efficiency.",
keywords = "CIGS, Numerical simulation, SCAPS, Thin film solar cell",
author = "Nima Khoshsirat and {Md Yunus}, {Nurul Amziah} and Hamidon, {Mohd Nizar} and Suhaidi Shafie and Nowshad Amin",
year = "2015",
month = "4",
day = "1",
doi = "10.1016/j.ijleo.2015.02.037",
language = "English",
volume = "126",
pages = "681--686",
journal = "Optik",
issn = "0030-4026",
publisher = "Urban und Fischer Verlag Jena",
number = "7-8",

}

TY - JOUR

T1 - Analysis of absorber layer properties effect on CIGS solar cell performance using SCAPS

AU - Khoshsirat, Nima

AU - Md Yunus, Nurul Amziah

AU - Hamidon, Mohd Nizar

AU - Shafie, Suhaidi

AU - Amin, Nowshad

PY - 2015/4/1

Y1 - 2015/4/1

N2 - Abstract This paper shows a numerical simulation and analysis of a copper-indium-gallium-diselenide (CIGS) solar cell performance. The Solar Cell Capacitance Simulator (SCAPS) software is used for multiple measurements. The impacts of absorber layer band gap and thickness variation on the cell's output parameters were extensively simulated. In this study, the CIGS band gap and electron affinity are first defined and formulated as mathematical functions of gallium (Ga) content ("x"). Then these new functions can predict the absorber layer band gap at different "x" and used to simulate and study of the cell performance. The analysis made from this numerical simulation has revealed the optimum energy band gap of the absorber layer to be 1.2 eV corresponding to x = 0.3. Subsequently, the cell efficiency is innovatively formulated as a function of Ga content in the absorber layer. The effect of absorber layer thickness on cell performance has also been simulated and its range was found to be between 2 μm and 3 μm and it is for the cell with low and optimum absorber layer band gap. Nevertheless, the cell with wide absorber layer band gap will increase the absorber layer thickness thus will cause reduction in cell efficiency.

AB - Abstract This paper shows a numerical simulation and analysis of a copper-indium-gallium-diselenide (CIGS) solar cell performance. The Solar Cell Capacitance Simulator (SCAPS) software is used for multiple measurements. The impacts of absorber layer band gap and thickness variation on the cell's output parameters were extensively simulated. In this study, the CIGS band gap and electron affinity are first defined and formulated as mathematical functions of gallium (Ga) content ("x"). Then these new functions can predict the absorber layer band gap at different "x" and used to simulate and study of the cell performance. The analysis made from this numerical simulation has revealed the optimum energy band gap of the absorber layer to be 1.2 eV corresponding to x = 0.3. Subsequently, the cell efficiency is innovatively formulated as a function of Ga content in the absorber layer. The effect of absorber layer thickness on cell performance has also been simulated and its range was found to be between 2 μm and 3 μm and it is for the cell with low and optimum absorber layer band gap. Nevertheless, the cell with wide absorber layer band gap will increase the absorber layer thickness thus will cause reduction in cell efficiency.

KW - CIGS

KW - Numerical simulation

KW - SCAPS

KW - Thin film solar cell

UR - http://www.scopus.com/inward/record.url?scp=84928793979&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84928793979&partnerID=8YFLogxK

U2 - 10.1016/j.ijleo.2015.02.037

DO - 10.1016/j.ijleo.2015.02.037

M3 - Article

AN - SCOPUS:84928793979

VL - 126

SP - 681

EP - 686

JO - Optik

JF - Optik

SN - 0030-4026

IS - 7-8

M1 - 55326

ER -