Analysis and simulation of carriers statistic for semiconducting single wall carbon nanotube

J. Karamdel, M. T. Ahmadi, M. Damghanian, Burhanuddin Yeop Majlis, Chang Fu Dee, R. Ismail

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In scaling down to 10 nm, the electron transportation is predominantly ballistic. Moreover, in most of the doped nanoscale devices, the carrier density is in the degenerate regime. In these cases the failure of Boltzmann statistic has led the research to new explanations. In this paper the authors formulate and simulate the carrier concentration in a semiconducting single wall carbon nanotube using the Fermi-Dirac distribution function. It was shown that the band structure of semiconducting single wall carbon nanotube nearby the minimum energy is parabolic and density of state is proportional to the Fermi-Dirac distribution. In the non-degenerate regime, Fermi energy is a weak logarithmic function of carrier concentration and varies linearly with temperature, but for strongly degenerate statistics, the Fermi energy is a strong function of carrier concentration and is independent of temperature.

Original languageEnglish
Pages (from-to)211-213
Number of pages3
JournalMaterials Research Innovations
Volume13
Issue number3
DOIs
Publication statusPublished - Sep 2009

Fingerprint

Carbon Nanotubes
Carrier concentration
Carbon nanotubes
carbon nanotubes
Statistics
statistics
Fermi level
simulation
ballistics
energy
Ballistics
distribution functions
Band structure
Distribution functions
scaling
temperature
Temperature
Electrons
electrons

Keywords

  • Band structure
  • Carrier statistic
  • CNT

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Analysis and simulation of carriers statistic for semiconducting single wall carbon nanotube. / Karamdel, J.; Ahmadi, M. T.; Damghanian, M.; Yeop Majlis, Burhanuddin; Dee, Chang Fu; Ismail, R.

In: Materials Research Innovations, Vol. 13, No. 3, 09.2009, p. 211-213.

Research output: Contribution to journalArticle

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