Analyses for various doping structures of SOI-based optical phase modulator using free carrier dispersion effect

B. Mardiana, Sahbudin Shaari, P. Susthitha Menon N V Visvanathan, H. Hazura, A. R. Hanim, Norhana Arsad, Huda Abdullah

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

This paper highlights the study on various structure of silicon-on-insulator (SOI) optical phase modulators based on free carrier dispersion effect. The proposed modulators employ the forward biased P-I-N diode structure integrated in the waveguide and will be working at 1.55 μm optical telecommunications wavelength. Three kinds of structure are compared systematically where the p+ and n+ doping positions are varied. The modeling and characterization of the SOI phase modulators was carried out by 3D numerical simulation package. Our results show that the position of doping regions have a great influences to the device performance. It was discovered that the best structure in this work demonstrated modulation efficiency of 0.015 V cm with a length of 155 μm.

Original languageEnglish
Pages (from-to)1800-1803
Number of pages4
JournalOptik
Volume125
Issue number6
DOIs
Publication statusPublished - Mar 2014

Fingerprint

Silicon
Modulators
modulators
Doping (additives)
insulators
silicon
Telecommunication
telecommunication
Diodes
Waveguides
diodes
Modulation
waveguides
modulation
Wavelength
Computer simulation
wavelengths
simulation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Cite this

Analyses for various doping structures of SOI-based optical phase modulator using free carrier dispersion effect. / Mardiana, B.; Shaari, Sahbudin; N V Visvanathan, P. Susthitha Menon; Hazura, H.; Hanim, A. R.; Arsad, Norhana; Abdullah, Huda.

In: Optik, Vol. 125, No. 6, 03.2014, p. 1800-1803.

Research output: Contribution to journalArticle

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