An overview of RF power amplifier techniques and effect of transistor scaling on its design parameters

Veeraiyah Thangasamy, Noor Ain Kamsani, MohdNizar Hamidon, Muhammad Faiz Bukhori

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A strong market growth for wireless systems has taken place over the last two decades, driven by persistent demands of ever smaller form-factor, increased power-efficiency and reliability. Radio frequency (RF) power amplifier (PA) is a critical block in a wireless transceiver, consuming most power and affecting battery life. Battery life is directly affected by the linearity and efficiency characteristics of the integrated PA. In this paper, we critically review key theories and techniques that are used in RF power amplifier designs, with emphasis on efficiency and linearity improvement. The device's physical size, material and processes greatly affect the power characteristics of PAs. Hence, we also critically review how scaling, semiconductor materials and technologies relate to RF power amplifier designs, with emphasis on power and frequency.

Original languageEnglish
Pages (from-to)257-276
Number of pages20
JournalInternational Journal of Applied Engineering Research
Volume9
Issue number2
Publication statusPublished - 2014

Fingerprint

Radio frequency amplifiers
Power amplifiers
Transistors
Transceivers
Semiconductor materials

Keywords

  • Current gain cut-off frequency (f)
  • Efficiency
  • Linearity
  • Peak-to-average power ratio (PAPR)
  • RF power amplifier
  • Scaling

ASJC Scopus subject areas

  • Engineering(all)

Cite this

An overview of RF power amplifier techniques and effect of transistor scaling on its design parameters. / Thangasamy, Veeraiyah; Ain Kamsani, Noor; Hamidon, MohdNizar; Bukhori, Muhammad Faiz.

In: International Journal of Applied Engineering Research, Vol. 9, No. 2, 2014, p. 257-276.

Research output: Contribution to journalArticle

@article{0fc69129bc0f4cf6b68c94186697d98d,
title = "An overview of RF power amplifier techniques and effect of transistor scaling on its design parameters",
abstract = "A strong market growth for wireless systems has taken place over the last two decades, driven by persistent demands of ever smaller form-factor, increased power-efficiency and reliability. Radio frequency (RF) power amplifier (PA) is a critical block in a wireless transceiver, consuming most power and affecting battery life. Battery life is directly affected by the linearity and efficiency characteristics of the integrated PA. In this paper, we critically review key theories and techniques that are used in RF power amplifier designs, with emphasis on efficiency and linearity improvement. The device's physical size, material and processes greatly affect the power characteristics of PAs. Hence, we also critically review how scaling, semiconductor materials and technologies relate to RF power amplifier designs, with emphasis on power and frequency.",
keywords = "Current gain cut-off frequency (f), Efficiency, Linearity, Peak-to-average power ratio (PAPR), RF power amplifier, Scaling",
author = "Veeraiyah Thangasamy and {Ain Kamsani}, Noor and MohdNizar Hamidon and Bukhori, {Muhammad Faiz}",
year = "2014",
language = "English",
volume = "9",
pages = "257--276",
journal = "International Journal of Applied Engineering Research",
issn = "0973-4562",
publisher = "Research India Publications",
number = "2",

}

TY - JOUR

T1 - An overview of RF power amplifier techniques and effect of transistor scaling on its design parameters

AU - Thangasamy, Veeraiyah

AU - Ain Kamsani, Noor

AU - Hamidon, MohdNizar

AU - Bukhori, Muhammad Faiz

PY - 2014

Y1 - 2014

N2 - A strong market growth for wireless systems has taken place over the last two decades, driven by persistent demands of ever smaller form-factor, increased power-efficiency and reliability. Radio frequency (RF) power amplifier (PA) is a critical block in a wireless transceiver, consuming most power and affecting battery life. Battery life is directly affected by the linearity and efficiency characteristics of the integrated PA. In this paper, we critically review key theories and techniques that are used in RF power amplifier designs, with emphasis on efficiency and linearity improvement. The device's physical size, material and processes greatly affect the power characteristics of PAs. Hence, we also critically review how scaling, semiconductor materials and technologies relate to RF power amplifier designs, with emphasis on power and frequency.

AB - A strong market growth for wireless systems has taken place over the last two decades, driven by persistent demands of ever smaller form-factor, increased power-efficiency and reliability. Radio frequency (RF) power amplifier (PA) is a critical block in a wireless transceiver, consuming most power and affecting battery life. Battery life is directly affected by the linearity and efficiency characteristics of the integrated PA. In this paper, we critically review key theories and techniques that are used in RF power amplifier designs, with emphasis on efficiency and linearity improvement. The device's physical size, material and processes greatly affect the power characteristics of PAs. Hence, we also critically review how scaling, semiconductor materials and technologies relate to RF power amplifier designs, with emphasis on power and frequency.

KW - Current gain cut-off frequency (f)

KW - Efficiency

KW - Linearity

KW - Peak-to-average power ratio (PAPR)

KW - RF power amplifier

KW - Scaling

UR - http://www.scopus.com/inward/record.url?scp=84893904097&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84893904097&partnerID=8YFLogxK

M3 - Article

VL - 9

SP - 257

EP - 276

JO - International Journal of Applied Engineering Research

JF - International Journal of Applied Engineering Research

SN - 0973-4562

IS - 2

ER -