Abstract
Molybdenum (Mo) is the prominent choice as the back contact for various thin film solar cells such as CIGS, CZTS and CdTe. Physical vapour deposition (PVD) technique especially sputtering process has been chosen as the foremost method to deposit Mo thin film on top of desired substrate due to ease of parametric control of growth conditions. In this paper, we reported the effect of various RF power, operating pressure as well as temperature on Mo films on top of Mo sheet and soda lime glass (SLG) deposited using RF magnetron sputtering. Uniform surface morphology was obtained as RF power, operating pressure and deposition temperature were optimised. However, at higher deposition temperature less uniform surface was observed. XRD pattern of Mo films showed two different peak of 〈200〉 and 〈211〉 in case of Mo sheet and single peak 〈110〉 in case of SLG. While peak intensity varies as deposition condition varies in case of Mo films deposited on Mo sheet. Electrical properties of Mo films on both Mo sheet and SLG were improved as RF power and deposition temperature are optimised. On the other hand, electrical properties are affected as operating pressure increased. Lower resistivity of 1.2×10 -9 .m and 6.65×10 -6 .Ω were found in case of Mo films deposited on Mo sheet and SLG. Surface roughness of 0.017 nm-19.32 nm were found in case of Mo films deposited on Mo sheet and 0.002 nm-5.04 nm were found in case of SLG. Roughness increased as RF power and deposition temperature increased. However, roughness decreased as operating pressure increased.
| Original language | English |
|---|---|
| Title of host publication | Energy Procedia |
| Publisher | Elsevier BV |
| Pages | 186-197 |
| Number of pages | 12 |
| Volume | 33 |
| DOIs | |
| Publication status | Published - 2013 |
| Event | 2012 PV Asia Pacific Conference, PVAP 2012 - Singapore, Singapore Duration: 23 Oct 2012 → 25 Oct 2012 |
Other
| Other | 2012 PV Asia Pacific Conference, PVAP 2012 |
|---|---|
| Country | Singapore |
| City | Singapore |
| Period | 23/10/12 → 25/10/12 |
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Keywords
- CIGS
- CZTS
- Mo back contact
- Resistivity
- RF magnetron sputtering
- RF power
ASJC Scopus subject areas
- Energy(all)
Cite this
An investigation on structural and electrical properties of RF-sputtered molybdenum thin film deposited on different substrates. / Dhar, N.; Chelvanathan, P.; Zaman, M.; Sopian, Kamaruzzaman; Amin, Nowshad.
Energy Procedia. Vol. 33 Elsevier BV, 2013. p. 186-197.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - An investigation on structural and electrical properties of RF-sputtered molybdenum thin film deposited on different substrates
AU - Dhar, N.
AU - Chelvanathan, P.
AU - Zaman, M.
AU - Sopian, Kamaruzzaman
AU - Amin, Nowshad
PY - 2013
Y1 - 2013
N2 - Molybdenum (Mo) is the prominent choice as the back contact for various thin film solar cells such as CIGS, CZTS and CdTe. Physical vapour deposition (PVD) technique especially sputtering process has been chosen as the foremost method to deposit Mo thin film on top of desired substrate due to ease of parametric control of growth conditions. In this paper, we reported the effect of various RF power, operating pressure as well as temperature on Mo films on top of Mo sheet and soda lime glass (SLG) deposited using RF magnetron sputtering. Uniform surface morphology was obtained as RF power, operating pressure and deposition temperature were optimised. However, at higher deposition temperature less uniform surface was observed. XRD pattern of Mo films showed two different peak of 〈200〉 and 〈211〉 in case of Mo sheet and single peak 〈110〉 in case of SLG. While peak intensity varies as deposition condition varies in case of Mo films deposited on Mo sheet. Electrical properties of Mo films on both Mo sheet and SLG were improved as RF power and deposition temperature are optimised. On the other hand, electrical properties are affected as operating pressure increased. Lower resistivity of 1.2×10 -9 .m and 6.65×10 -6 .Ω were found in case of Mo films deposited on Mo sheet and SLG. Surface roughness of 0.017 nm-19.32 nm were found in case of Mo films deposited on Mo sheet and 0.002 nm-5.04 nm were found in case of SLG. Roughness increased as RF power and deposition temperature increased. However, roughness decreased as operating pressure increased.
AB - Molybdenum (Mo) is the prominent choice as the back contact for various thin film solar cells such as CIGS, CZTS and CdTe. Physical vapour deposition (PVD) technique especially sputtering process has been chosen as the foremost method to deposit Mo thin film on top of desired substrate due to ease of parametric control of growth conditions. In this paper, we reported the effect of various RF power, operating pressure as well as temperature on Mo films on top of Mo sheet and soda lime glass (SLG) deposited using RF magnetron sputtering. Uniform surface morphology was obtained as RF power, operating pressure and deposition temperature were optimised. However, at higher deposition temperature less uniform surface was observed. XRD pattern of Mo films showed two different peak of 〈200〉 and 〈211〉 in case of Mo sheet and single peak 〈110〉 in case of SLG. While peak intensity varies as deposition condition varies in case of Mo films deposited on Mo sheet. Electrical properties of Mo films on both Mo sheet and SLG were improved as RF power and deposition temperature are optimised. On the other hand, electrical properties are affected as operating pressure increased. Lower resistivity of 1.2×10 -9 .m and 6.65×10 -6 .Ω were found in case of Mo films deposited on Mo sheet and SLG. Surface roughness of 0.017 nm-19.32 nm were found in case of Mo films deposited on Mo sheet and 0.002 nm-5.04 nm were found in case of SLG. Roughness increased as RF power and deposition temperature increased. However, roughness decreased as operating pressure increased.
KW - CIGS
KW - CZTS
KW - Mo back contact
KW - Resistivity
KW - RF magnetron sputtering
KW - RF power
UR - http://www.scopus.com/inward/record.url?scp=84897492885&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84897492885&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2013.05.057
DO - 10.1016/j.egypro.2013.05.057
M3 - Conference contribution
AN - SCOPUS:84897492885
VL - 33
SP - 186
EP - 197
BT - Energy Procedia
PB - Elsevier BV
ER -