An interdigitated diffusion-based in0.53Ga0.47As lateral PIN photodiode

P. Susthitha Menon N V Visvanathan, Kumararajah Kandiah, Abang Annuar Ehsan, Sahbudin Shaari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

A novel 3D modeling of a lateral PIN photodiode (LPP) is presented utilizing Ino.53Gao.47As as the absorbing layer. The LPP has profound advantages compared to the vertical PIN photodiode (VPD) mainly due to the ease of fabrication where diffusion or ion implantation can be used to form the p+ and n+ wells in the absorbing layer. The device has an interdigitated electrode structure to maximize optical absorption. At a wavelength of 1550 nm, optical power of 5 Wcm-2 and 5 V reverse bias voltage, the device achieved responsivity of 0.5 AW. The -3dB frequency response of the device was at 14 GHz and it is able to cater for 10 Gbit/s optical communication networks.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume6838
DOIs
Publication statusPublished - 2008
EventOptoelectronic Devices and Integration II - Beijing
Duration: 12 Nov 200715 Nov 2007

Other

OtherOptoelectronic Devices and Integration II
CityBeijing
Period12/11/0715/11/07

Fingerprint

Photodiodes
photodiodes
communication networks
Optical communication
Bias voltage
Fiber optic networks
Ion implantation
Light absorption
frequency response
Telecommunication networks
Frequency response
optical communication
ion implantation
implantation
optical absorption
Fabrication
Wavelength
Electrodes
fabrication
electrodes

Keywords

  • Diffusion
  • InGaAs
  • Lateral
  • Modeling
  • Photodiode
  • PIN
  • Simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

N V Visvanathan, P. S. M., Kandiah, K., Ehsan, A. A., & Shaari, S. (2008). An interdigitated diffusion-based in0.53Ga0.47As lateral PIN photodiode. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 6838). [68380C] https://doi.org/10.1117/12.757385

An interdigitated diffusion-based in0.53Ga0.47As lateral PIN photodiode. / N V Visvanathan, P. Susthitha Menon; Kandiah, Kumararajah; Ehsan, Abang Annuar; Shaari, Sahbudin.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6838 2008. 68380C.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

N V Visvanathan, PSM, Kandiah, K, Ehsan, AA & Shaari, S 2008, An interdigitated diffusion-based in0.53Ga0.47As lateral PIN photodiode. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 6838, 68380C, Optoelectronic Devices and Integration II, Beijing, 12/11/07. https://doi.org/10.1117/12.757385
N V Visvanathan PSM, Kandiah K, Ehsan AA, Shaari S. An interdigitated diffusion-based in0.53Ga0.47As lateral PIN photodiode. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6838. 2008. 68380C https://doi.org/10.1117/12.757385
N V Visvanathan, P. Susthitha Menon ; Kandiah, Kumararajah ; Ehsan, Abang Annuar ; Shaari, Sahbudin. / An interdigitated diffusion-based in0.53Ga0.47As lateral PIN photodiode. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6838 2008.
@inproceedings{860044e2ffb647fba30596fd72dcae38,
title = "An interdigitated diffusion-based in0.53Ga0.47As lateral PIN photodiode",
abstract = "A novel 3D modeling of a lateral PIN photodiode (LPP) is presented utilizing Ino.53Gao.47As as the absorbing layer. The LPP has profound advantages compared to the vertical PIN photodiode (VPD) mainly due to the ease of fabrication where diffusion or ion implantation can be used to form the p+ and n+ wells in the absorbing layer. The device has an interdigitated electrode structure to maximize optical absorption. At a wavelength of 1550 nm, optical power of 5 Wcm-2 and 5 V reverse bias voltage, the device achieved responsivity of 0.5 AW. The -3dB frequency response of the device was at 14 GHz and it is able to cater for 10 Gbit/s optical communication networks.",
keywords = "Diffusion, InGaAs, Lateral, Modeling, Photodiode, PIN, Simulation",
author = "{N V Visvanathan}, {P. Susthitha Menon} and Kumararajah Kandiah and Ehsan, {Abang Annuar} and Sahbudin Shaari",
year = "2008",
doi = "10.1117/12.757385",
language = "English",
isbn = "9780819470133",
volume = "6838",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - An interdigitated diffusion-based in0.53Ga0.47As lateral PIN photodiode

AU - N V Visvanathan, P. Susthitha Menon

AU - Kandiah, Kumararajah

AU - Ehsan, Abang Annuar

AU - Shaari, Sahbudin

PY - 2008

Y1 - 2008

N2 - A novel 3D modeling of a lateral PIN photodiode (LPP) is presented utilizing Ino.53Gao.47As as the absorbing layer. The LPP has profound advantages compared to the vertical PIN photodiode (VPD) mainly due to the ease of fabrication where diffusion or ion implantation can be used to form the p+ and n+ wells in the absorbing layer. The device has an interdigitated electrode structure to maximize optical absorption. At a wavelength of 1550 nm, optical power of 5 Wcm-2 and 5 V reverse bias voltage, the device achieved responsivity of 0.5 AW. The -3dB frequency response of the device was at 14 GHz and it is able to cater for 10 Gbit/s optical communication networks.

AB - A novel 3D modeling of a lateral PIN photodiode (LPP) is presented utilizing Ino.53Gao.47As as the absorbing layer. The LPP has profound advantages compared to the vertical PIN photodiode (VPD) mainly due to the ease of fabrication where diffusion or ion implantation can be used to form the p+ and n+ wells in the absorbing layer. The device has an interdigitated electrode structure to maximize optical absorption. At a wavelength of 1550 nm, optical power of 5 Wcm-2 and 5 V reverse bias voltage, the device achieved responsivity of 0.5 AW. The -3dB frequency response of the device was at 14 GHz and it is able to cater for 10 Gbit/s optical communication networks.

KW - Diffusion

KW - InGaAs

KW - Lateral

KW - Modeling

KW - Photodiode

KW - PIN

KW - Simulation

UR - http://www.scopus.com/inward/record.url?scp=41149172286&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=41149172286&partnerID=8YFLogxK

U2 - 10.1117/12.757385

DO - 10.1117/12.757385

M3 - Conference contribution

SN - 9780819470133

VL - 6838

BT - Proceedings of SPIE - The International Society for Optical Engineering

ER -