Aluminum nitride thin film deposition using DC sputtering

Mohd H S Alrashdan, Azrul Azlan Hamzah, Burhanuddin Yeop Majlis, Mohd Faizal Aziz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Aluminum nitride thin film depositions at a low temperature become one of the most promising fields in micro-electro mechanical systems and in the semiconductor industry; because of its good compatibility with designs on silicon substrates, its mechanically strong, chemically stable, wide bandgap energy (≈6.2 eV), and has a large electro-mechanical coupling constant. An AlN thin film deposition using DC Magnetron sputtering have the advantage over other deposition methods due to its simplicity, better parameter control, cheapness, and requires a low deposition temperature. The NTI nano film DC sputtering system was used to deposit the AlN thin film with 99.99% pure aluminum target material and 100 silicon substrates, the working temperature is at 20C°, there is a 10Cm separation distance between the target and the substrate, 335∼351 V cathode voltage, the foreline and base pressures are 2×10-2 T, 4×10-5 T respectively, and uses 200W DC power. We vary the time and nitrogen/argon gas flow ratio. Deposited film was characterized by X-ray diffraction and (002) of wurtzite hexagonal phase of AlN thin film was found with beak intensity of 800 count per second for 50% nitrogen content. Field Emission Scanning Electron Microscopy was used to study thin film cross section, film thicknesses and deposition flow rate at different times and gas flow ratio, there is inverse relationship between nitrogen gas percentage deposition and flow rate. Deposition flow rate are 4.12 nm/ min for 50% nitrogen and 2.217 nm/min for 75% of nitrogen content.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages72-75
Number of pages4
ISBN (Print)9781479957606
DOIs
Publication statusPublished - 10 Oct 2014
Event11th IEEE International Conference on Semiconductor Electronics, ICSE 2014 - Kuala Lumpur
Duration: 27 Aug 201429 Aug 2014

Other

Other11th IEEE International Conference on Semiconductor Electronics, ICSE 2014
CityKuala Lumpur
Period27/8/1429/8/14

Fingerprint

Aluminum nitride
Sputtering
Nitrogen
Thin films
Flow rate
Silicon
Flow of gases
Substrates
Electromechanical coupling
Argon
Deposition rates
Aluminum
Field emission
Magnetron sputtering
Temperature
Film thickness
aluminum nitride
Energy gap
Cathodes
Deposits

Keywords

  • Aluminum Nitride
  • DC Sputtering
  • Thin Film Deposition

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Alrashdan, M. H. S., Hamzah, A. A., Yeop Majlis, B., & Aziz, M. F. (2014). Aluminum nitride thin film deposition using DC sputtering. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 72-75). [6920798] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMELEC.2014.6920798

Aluminum nitride thin film deposition using DC sputtering. / Alrashdan, Mohd H S; Hamzah, Azrul Azlan; Yeop Majlis, Burhanuddin; Aziz, Mohd Faizal.

IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc., 2014. p. 72-75 6920798.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Alrashdan, MHS, Hamzah, AA, Yeop Majlis, B & Aziz, MF 2014, Aluminum nitride thin film deposition using DC sputtering. in IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE., 6920798, Institute of Electrical and Electronics Engineers Inc., pp. 72-75, 11th IEEE International Conference on Semiconductor Electronics, ICSE 2014, Kuala Lumpur, 27/8/14. https://doi.org/10.1109/SMELEC.2014.6920798
Alrashdan MHS, Hamzah AA, Yeop Majlis B, Aziz MF. Aluminum nitride thin film deposition using DC sputtering. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc. 2014. p. 72-75. 6920798 https://doi.org/10.1109/SMELEC.2014.6920798
Alrashdan, Mohd H S ; Hamzah, Azrul Azlan ; Yeop Majlis, Burhanuddin ; Aziz, Mohd Faizal. / Aluminum nitride thin film deposition using DC sputtering. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 72-75
@inproceedings{4bc6ad5309914539bdc8e2952a3595ff,
title = "Aluminum nitride thin film deposition using DC sputtering",
abstract = "Aluminum nitride thin film depositions at a low temperature become one of the most promising fields in micro-electro mechanical systems and in the semiconductor industry; because of its good compatibility with designs on silicon substrates, its mechanically strong, chemically stable, wide bandgap energy (≈6.2 eV), and has a large electro-mechanical coupling constant. An AlN thin film deposition using DC Magnetron sputtering have the advantage over other deposition methods due to its simplicity, better parameter control, cheapness, and requires a low deposition temperature. The NTI nano film DC sputtering system was used to deposit the AlN thin film with 99.99{\%} pure aluminum target material and 100 silicon substrates, the working temperature is at 20C°, there is a 10Cm separation distance between the target and the substrate, 335∼351 V cathode voltage, the foreline and base pressures are 2×10-2 T, 4×10-5 T respectively, and uses 200W DC power. We vary the time and nitrogen/argon gas flow ratio. Deposited film was characterized by X-ray diffraction and (002) of wurtzite hexagonal phase of AlN thin film was found with beak intensity of 800 count per second for 50{\%} nitrogen content. Field Emission Scanning Electron Microscopy was used to study thin film cross section, film thicknesses and deposition flow rate at different times and gas flow ratio, there is inverse relationship between nitrogen gas percentage deposition and flow rate. Deposition flow rate are 4.12 nm/ min for 50{\%} nitrogen and 2.217 nm/min for 75{\%} of nitrogen content.",
keywords = "Aluminum Nitride, DC Sputtering, Thin Film Deposition",
author = "Alrashdan, {Mohd H S} and Hamzah, {Azrul Azlan} and {Yeop Majlis}, Burhanuddin and Aziz, {Mohd Faizal}",
year = "2014",
month = "10",
day = "10",
doi = "10.1109/SMELEC.2014.6920798",
language = "English",
isbn = "9781479957606",
pages = "72--75",
booktitle = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - Aluminum nitride thin film deposition using DC sputtering

AU - Alrashdan, Mohd H S

AU - Hamzah, Azrul Azlan

AU - Yeop Majlis, Burhanuddin

AU - Aziz, Mohd Faizal

PY - 2014/10/10

Y1 - 2014/10/10

N2 - Aluminum nitride thin film depositions at a low temperature become one of the most promising fields in micro-electro mechanical systems and in the semiconductor industry; because of its good compatibility with designs on silicon substrates, its mechanically strong, chemically stable, wide bandgap energy (≈6.2 eV), and has a large electro-mechanical coupling constant. An AlN thin film deposition using DC Magnetron sputtering have the advantage over other deposition methods due to its simplicity, better parameter control, cheapness, and requires a low deposition temperature. The NTI nano film DC sputtering system was used to deposit the AlN thin film with 99.99% pure aluminum target material and 100 silicon substrates, the working temperature is at 20C°, there is a 10Cm separation distance between the target and the substrate, 335∼351 V cathode voltage, the foreline and base pressures are 2×10-2 T, 4×10-5 T respectively, and uses 200W DC power. We vary the time and nitrogen/argon gas flow ratio. Deposited film was characterized by X-ray diffraction and (002) of wurtzite hexagonal phase of AlN thin film was found with beak intensity of 800 count per second for 50% nitrogen content. Field Emission Scanning Electron Microscopy was used to study thin film cross section, film thicknesses and deposition flow rate at different times and gas flow ratio, there is inverse relationship between nitrogen gas percentage deposition and flow rate. Deposition flow rate are 4.12 nm/ min for 50% nitrogen and 2.217 nm/min for 75% of nitrogen content.

AB - Aluminum nitride thin film depositions at a low temperature become one of the most promising fields in micro-electro mechanical systems and in the semiconductor industry; because of its good compatibility with designs on silicon substrates, its mechanically strong, chemically stable, wide bandgap energy (≈6.2 eV), and has a large electro-mechanical coupling constant. An AlN thin film deposition using DC Magnetron sputtering have the advantage over other deposition methods due to its simplicity, better parameter control, cheapness, and requires a low deposition temperature. The NTI nano film DC sputtering system was used to deposit the AlN thin film with 99.99% pure aluminum target material and 100 silicon substrates, the working temperature is at 20C°, there is a 10Cm separation distance between the target and the substrate, 335∼351 V cathode voltage, the foreline and base pressures are 2×10-2 T, 4×10-5 T respectively, and uses 200W DC power. We vary the time and nitrogen/argon gas flow ratio. Deposited film was characterized by X-ray diffraction and (002) of wurtzite hexagonal phase of AlN thin film was found with beak intensity of 800 count per second for 50% nitrogen content. Field Emission Scanning Electron Microscopy was used to study thin film cross section, film thicknesses and deposition flow rate at different times and gas flow ratio, there is inverse relationship between nitrogen gas percentage deposition and flow rate. Deposition flow rate are 4.12 nm/ min for 50% nitrogen and 2.217 nm/min for 75% of nitrogen content.

KW - Aluminum Nitride

KW - DC Sputtering

KW - Thin Film Deposition

UR - http://www.scopus.com/inward/record.url?scp=84908240273&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84908240273&partnerID=8YFLogxK

U2 - 10.1109/SMELEC.2014.6920798

DO - 10.1109/SMELEC.2014.6920798

M3 - Conference contribution

AN - SCOPUS:84908240273

SN - 9781479957606

SP - 72

EP - 75

BT - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

PB - Institute of Electrical and Electronics Engineers Inc.

ER -