Ag/ZnO/p-Si/Ag heterojunction and their optoelectronic characteristics under different UV wavelength illumination

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Abstract

An ultraviolet (UV) photodiode was fabricated by employing zinc oxide (ZnO) nanorods (NRs) grown on a p-type silicon (Si) wafer. The fabricated heterojunction was characterised for its crystal structure, morphology, chemical state, and the photoluminescence emission. The current-voltage characteristics show that the junction exhibits good rectification characteristics, with a reverse leakage current of 1.2 nA and a rectification ratio of 210 at 5 V. Furthermore, the calculated barrier height and the ideality factor were 0.78 eV and 2.3, respectively. The photodiode was illuminated with different UV wavelengths (300-400 nm). The output measurements of the photocurrent showed the maximum range of values for the wavelength at 350-370 nm. The barrier height was at its minimum value, and the ideality factor was at its maximum value in the wavelengths with energies near the energy band gap of the ZnO NRs. The results reveal the relation between the UV wavelengths, the barrier height, and the ideality factor. The fabricated photodiode reveals acceptable properties with responsivity of 0.6 A/W at wavelength 370 nm and 5 V reverse bias.

Original languageEnglish
Pages (from-to)50-57
Number of pages8
JournalSensors and Actuators, A: Physical
Volume242
DOIs
Publication statusPublished - 1 May 2016

Fingerprint

Zinc Oxide
Silicon
Zinc oxide
zinc oxides
Optoelectronic devices
Heterojunctions
heterojunctions
Lighting
illumination
Wavelength
Photodiodes
photodiodes
silicon
wavelengths
rectification
Nanorods
nanorods
Current voltage characteristics
Photocurrents
Silicon wafers

Keywords

  • Barrier height
  • Ideality factor
  • p-n heterojunction
  • UV photodetector
  • ZnO nanorods

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Instrumentation

Cite this

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title = "Ag/ZnO/p-Si/Ag heterojunction and their optoelectronic characteristics under different UV wavelength illumination",
abstract = "An ultraviolet (UV) photodiode was fabricated by employing zinc oxide (ZnO) nanorods (NRs) grown on a p-type silicon (Si) wafer. The fabricated heterojunction was characterised for its crystal structure, morphology, chemical state, and the photoluminescence emission. The current-voltage characteristics show that the junction exhibits good rectification characteristics, with a reverse leakage current of 1.2 nA and a rectification ratio of 210 at 5 V. Furthermore, the calculated barrier height and the ideality factor were 0.78 eV and 2.3, respectively. The photodiode was illuminated with different UV wavelengths (300-400 nm). The output measurements of the photocurrent showed the maximum range of values for the wavelength at 350-370 nm. The barrier height was at its minimum value, and the ideality factor was at its maximum value in the wavelengths with energies near the energy band gap of the ZnO NRs. The results reveal the relation between the UV wavelengths, the barrier height, and the ideality factor. The fabricated photodiode reveals acceptable properties with responsivity of 0.6 A/W at wavelength 370 nm and 5 V reverse bias.",
keywords = "Barrier height, Ideality factor, p-n heterojunction, UV photodetector, ZnO nanorods",
author = "Al-Hardan, {N. H.} and {Abdul Hamid}, {Muhammad Azmi} and Ahmed, {Naser M.} and Roslinda Shamsudin and Othman, {Norinsan Kamil}",
year = "2016",
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TY - JOUR

T1 - Ag/ZnO/p-Si/Ag heterojunction and their optoelectronic characteristics under different UV wavelength illumination

AU - Al-Hardan, N. H.

AU - Abdul Hamid, Muhammad Azmi

AU - Ahmed, Naser M.

AU - Shamsudin, Roslinda

AU - Othman, Norinsan Kamil

PY - 2016/5/1

Y1 - 2016/5/1

N2 - An ultraviolet (UV) photodiode was fabricated by employing zinc oxide (ZnO) nanorods (NRs) grown on a p-type silicon (Si) wafer. The fabricated heterojunction was characterised for its crystal structure, morphology, chemical state, and the photoluminescence emission. The current-voltage characteristics show that the junction exhibits good rectification characteristics, with a reverse leakage current of 1.2 nA and a rectification ratio of 210 at 5 V. Furthermore, the calculated barrier height and the ideality factor were 0.78 eV and 2.3, respectively. The photodiode was illuminated with different UV wavelengths (300-400 nm). The output measurements of the photocurrent showed the maximum range of values for the wavelength at 350-370 nm. The barrier height was at its minimum value, and the ideality factor was at its maximum value in the wavelengths with energies near the energy band gap of the ZnO NRs. The results reveal the relation between the UV wavelengths, the barrier height, and the ideality factor. The fabricated photodiode reveals acceptable properties with responsivity of 0.6 A/W at wavelength 370 nm and 5 V reverse bias.

AB - An ultraviolet (UV) photodiode was fabricated by employing zinc oxide (ZnO) nanorods (NRs) grown on a p-type silicon (Si) wafer. The fabricated heterojunction was characterised for its crystal structure, morphology, chemical state, and the photoluminescence emission. The current-voltage characteristics show that the junction exhibits good rectification characteristics, with a reverse leakage current of 1.2 nA and a rectification ratio of 210 at 5 V. Furthermore, the calculated barrier height and the ideality factor were 0.78 eV and 2.3, respectively. The photodiode was illuminated with different UV wavelengths (300-400 nm). The output measurements of the photocurrent showed the maximum range of values for the wavelength at 350-370 nm. The barrier height was at its minimum value, and the ideality factor was at its maximum value in the wavelengths with energies near the energy band gap of the ZnO NRs. The results reveal the relation between the UV wavelengths, the barrier height, and the ideality factor. The fabricated photodiode reveals acceptable properties with responsivity of 0.6 A/W at wavelength 370 nm and 5 V reverse bias.

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KW - Ideality factor

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KW - UV photodetector

KW - ZnO nanorods

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