Advanced simulation of statistical variability and reliability in nano CMOS transistors

A. Asenov, S. Roy, R. A. Brown, G. Roy, C. Alexander, C. Riddet, C. Millar, B. Cheng, A. Martinez, N. Seoane, D. Reid, Muhammad Faiz Bukhori, X. Wang, U. Kovac

Research output: Chapter in Book/Report/Conference proceedingConference contribution

31 Citations (Scopus)
Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
Publication statusPublished - 2008
Externally publishedYes
Event2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA
Duration: 15 Dec 200817 Dec 2008

Other

Other2008 IEEE International Electron Devices Meeting, IEDM 2008
CitySan Francisco, CA
Period15/12/0817/12/08

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Transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Asenov, A., Roy, S., Brown, R. A., Roy, G., Alexander, C., Riddet, C., ... Kovac, U. (2008). Advanced simulation of statistical variability and reliability in nano CMOS transistors. In Technical Digest - International Electron Devices Meeting, IEDM [4796712] https://doi.org/10.1109/IEDM.2008.4796712

Advanced simulation of statistical variability and reliability in nano CMOS transistors. / Asenov, A.; Roy, S.; Brown, R. A.; Roy, G.; Alexander, C.; Riddet, C.; Millar, C.; Cheng, B.; Martinez, A.; Seoane, N.; Reid, D.; Bukhori, Muhammad Faiz; Wang, X.; Kovac, U.

Technical Digest - International Electron Devices Meeting, IEDM. 2008. 4796712.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Asenov, A, Roy, S, Brown, RA, Roy, G, Alexander, C, Riddet, C, Millar, C, Cheng, B, Martinez, A, Seoane, N, Reid, D, Bukhori, MF, Wang, X & Kovac, U 2008, Advanced simulation of statistical variability and reliability in nano CMOS transistors. in Technical Digest - International Electron Devices Meeting, IEDM., 4796712, 2008 IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, 15/12/08. https://doi.org/10.1109/IEDM.2008.4796712
Asenov A, Roy S, Brown RA, Roy G, Alexander C, Riddet C et al. Advanced simulation of statistical variability and reliability in nano CMOS transistors. In Technical Digest - International Electron Devices Meeting, IEDM. 2008. 4796712 https://doi.org/10.1109/IEDM.2008.4796712
Asenov, A. ; Roy, S. ; Brown, R. A. ; Roy, G. ; Alexander, C. ; Riddet, C. ; Millar, C. ; Cheng, B. ; Martinez, A. ; Seoane, N. ; Reid, D. ; Bukhori, Muhammad Faiz ; Wang, X. ; Kovac, U. / Advanced simulation of statistical variability and reliability in nano CMOS transistors. Technical Digest - International Electron Devices Meeting, IEDM. 2008.
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